Minos-MLG50T65FUK
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MLG50T65FUK
IGBT
1
．
Description
MLG50T65FUK is obtained by advanced
Trench Field Stop (T-FS) technology which is
characteristic with low V
CE(sat)
, optimized switching
performance and low gate charge Q
g
. The IGBT is
suitable device for welding, UPS, and high
switching frequency applications.
KEY CHARACTERISTICS
Parameter
V
CES
I
C
Value
650
50
Unit
V
A
V
CE(sat).typ
1.6
V
FEATURES
l
l
l
l
l
Fast Switching
Low V
CE(sat)
Positive temperature coefficient
Fast recovery anti-parallel diode
RoHS product
APPLICATIONS
TO-3PN
TO-247
l
l
l
l
Welding converters
UPS
Boost Chopper
Air condition
ORDERING INFORMATION
Ordering Codes
Package
TO-3PN
TO-247
Product Code
G50T65
Packing
Tube
Tube
MLG50T65FUK-W
MLG50T65FUK-F
G50T65
MLG50T65FUK
XXXX
：
Product Code
(2) Package
type
(1) Chip
name
XXXX
YYWW ZZ
YYWW
：
Year & Week
ZZ
：
Assembly Code
(1) MLG50T65FUK: 650V 50A
(2) W:TO-3PN
F:TO-247
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
MLG50T65FUK
IGBT
2
．
ABSOLUTE RATINGS
Symbol
Parameter
Values
Units
Collector-Emitter Voltage
V
CES
650
100
50
V
A
A
A
A
A
A
V
Collector Current @T
C
=25
°
C
I
C
I
CM
I
F
Collector Current @T
C
=100
°
C
Pulsed Collector Current, tp limited by T
Jmax
Diode Continuous Forward Current @T
C
=25
°
C
Diode Continuous Forward Current @T
C
=100
°
C
Diode Maximum Forward Current, limited by T
Jmax
Gate-Emitter Voltage
200
50
25
I
FM
200
±
30
V
GES
Short circuit withstand time VGE=15V, VCC
≤
400V,
Allowed number of short circuits<1000,Times between
short circuits:
≥
1.0s,T
J
≤
175
°
C
t
SC
8.0
µ
s
Power Dissipation @T
C
=25
°
C
P
D
T
Jmax,
T
stg
T
L
300
175,
–
55 to 175
260
W
℃
℃
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
3
．
Thermal characteristics
Symbol
Parameter
Values
0.5
Units
℃
/W
℃
/W
℃
/W
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
Junction-to-Ambient
R
θ
JC
R
θ
JC
0.65
40
R
θ
JA
4
．
Electrical Characteristics
at T
C
= 25
°
C, unless otherwise specified
Static Characteristics
Values
Units
V
Test
Conditions
Symbol
V
CES
Parameter
Min.
Typ.
Max.
Collector-Emitter Breakdown
Voltage
V
GE
= 0V,
I
C
= 250
µ
A
650
—
—
V
GE
= 15V,I
C
= 50A
—
—
—
1.60 2.00
T
J
=25
℃
Collector-Emitter Saturation
Voltage
V
CE(sat)
V
GE(TH)
1.85
2.00
—
—
V
V
T
J
=125
℃
T
J
=175
℃
Gate Threshold Voltage
V
CE
= V
GE
,I
C
= 1mA
4.8
5.5
6.2
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
MLG50T65FUK
IGBT
I
F
=25A
—
—
—
1.70 2.30
T
J
=25
℃
Diode Forward Voltage
Diode Forward Voltage
V
F
V
F
1.30
1.15
—
—
V
V
T
J
=125
℃
T
J
=175
℃
I
F
=25A
—
—
—
2.00 2.60
T
J
=25
℃
1.65
1.50
—
—
T
J
=125
℃
T
J
=175
℃
Collector-Emitter Leakage
Current
V
CE
= 650V,
V
GE
= 0V
I
CES
—
—
—
—
—
—
4
µ
A
nA
nA
Gate-Emitter Forward
Leakage Current
V
GE
= +30V
V
GE
= -30V
I
GES(F)
I
GES(R)
200
-200
Gate-Emitter Reverse
Leakage Current
Pulse width tp
≤
300
µ
s,
δ≤
2%
Dynamic Characteristics
Symbol Parameter
Values
Test Conditions
Units
Min.
—
Typ.
Max.
—
Input Capacitance
C
iss
2109
158
24
V
GE
=0V
V
CE
=25V
f =1.0MHz
Output Capacitance
C
oss
—
—
pF
nC
Reverse Transfer Capacitance
C
rss
Q
G
—
—
Gate charge
—
106
53
—
V
CC
=520V
I
CE
=50A
V
GE
=15V
Gate-emitter charge
Gate-collector charge
Q
GE
Q
GC
—
—
—
22
—
Short circuit collector current
Max.1000 short circuits,
Times between short circuits:
≥
1.0s
V
GE
=15.0V,V
CC
≤
400V
，
I
C(SC)
250
A
t
SC
≤
8us
，
T
J
≤
175
℃
IGBT Switching Characteristics, at T
J
=25
℃
Values
Symbol
Parameter
Test Conditions
Units
ns
Min.
—
Typ.
Max.
—
Turn-on Delay Time
Rise Time
t
d(on)
tr
t
d(off)
t
f
22
44
—
—
I
C
=50A
Turn-Off Delay Time
Fall Time
—
102
59
—
V
CE
= 400V
V
GE
= 15V
R
G
=5
Ω
—
—
T
J
=25
°
C
Inductive Load
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
on
E
off
E
ts
—
0.98
0.81
1.79
—
—
—
mJ
—
—
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
MLG50T65FUK
IGBT
IGBT Switching Characteristics, at T
J
=175
℃
Values
Symbol
Parameter
Test Conditions
Units
ns
Min.
—
Typ.
Max.
—
Turn-on Delay Time
Rise Time
t
d(on)
tr
t
d(off)
t
f
22
—
41
—
I
C
=50A
V
CE
= 400V
V
GE
= 15V
R
G
=5
Ω
T
J
=175
°
C
Inductive Load
Turn-Off Delay Time
Fall Time
—
182
115
1.06
1.48
2.54
—
—
—
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
on
E
off
E
ts
—
—
—
—
mJ
—
—
Diode Characteristics, at T
J
=25
℃
Values
Symbol
Parameter
Test Conditions
Units
Min.
—
Typ.
Max.
—
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T
rr
Q
rr
I
rrm
T
rr
200
380
4.8
ns
nC
A
I
F
=25A,
di/dt=200A/
µ
s,
T
J
=25
°
C
—
—
—
—
—
210
220
4.4
—
ns
nC
A
I
F
=50A,
di/dt=200A/
µ
s,
T
J
=25
°
C
Q
rr
I
rrm
—
—
—
—
Diode Characteristics, at T
J
=175
℃
Values
Symbol
Parameter
Test Conditions
Units
Min.
—
Typ.
Max.
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T
rr
Q
rr
I
rrm
T
rr
213
—
ns
nC
A
I
F
=25A,
di/dt=200A/
µ
s,
T
J
=175
°
C
—
1607 —
—
13
—
—
—
266
ns
nC
A
I
F
=50A,
di/dt=200A/
µ
s,
T
J
=175
°
C
Q
rr
I
rrm
—
1704 —
12 —
—
5.
Characteristics Curves
Figure 1. Forward Bias Safe Operating Area
for TO3PN/TO247
Figure 2. Power Dissipation vs Case Temperature
for TO3PN/TO247
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
MLG50T65FUK
IGBT
Figure 3. Collector Current vs Case Temperature
Figure 4. Typical Transfer Characteristics
Figure 5. Typical Output Characteristics
Figure 6. Typical Output Characteristics
(T
J
=25
℃
)
(T
J
=175
℃
)
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
MLG50T65FUK
IGBT
Figure 7. Typical Collector-Emitter Saturation
Voltage vs Junction Temperature
Figure 8. Typical Gate-Emitter Threshold Voltage
vs Junction Temperature
Figure 9. Typical Switching Times vs Gate
Figure 10. Typical Switching Energy vs Gate
Resistor (T
J
=25
℃
, V
CE
=400V, V
GE
=15/0V, I
C
=50A)
Resistor (T
J
=25
℃
, V
CE
=400V, V
GE=
15/0V, I
C
=50A)
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
MLG50T65FUK
IGBT
Figure 11. Typical Switching Times vs Junction
Temperature ( V
CE
=400V, V
GE
=15/0V, Ic=50A)
Figure 12. Typical Switching Energy vs Junction
Temperature (V
CE
=400V, V
GE
=15/0V, Ic=50A)
Figure 13. Typical Switching Times vs Collector
Figure 14. Typical Switching Energy vs Collector
Current (T
J
=25
℃
,
V
CE
=400V, V
GE
=15/0V)
Current (T
J
=25
℃
,
V
CE
=400V, V
GE
=15/0V)
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
MLG50T65FUK
IGBT
Figure 15. Typical Switching Times vs V
CE
Figure 16. Typical Switching Energy vs
V
CE
( T
J
=25
℃
,
V
GE
=15/0V, I
C
=50A)
( T
J
=25
℃
, V
GE
=15/0V, I
C
=50A)
Figure 18. Typical Capacitance vs Collector-
Emitter Voltage
Figure 17. Typical Gate Charge
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
MLG50T65FUK
IGBT
Figure 19. IGBT Transient Thermal Impedance vs
Figure 20. Diode Transient Thermal Impedance vs
Pulse Width(TO3PN/TO247)
Pulse Width(TO3PN/TO247)
Figure 21. Typical Diode Forward Current vs
Forward Voltage
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
MLG50T65FUK
IGBT
6. Test Circuit and Waveform
Figure 22. Inductive Switching Test Circuit
Figure 23. Definition of switching times
Figure 24. Definition of switching losses
Figure 25. Definition of diode switching characteristics
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
MLG50T65FUK
IGBT
7.
Package Description
TO-3PN Package
Values(mm)
Items
MIN
15.00
MAX
16.00
A
B
C
D
19.20
4.60
1.40
20.60
5.00
1.60
E
F
0.90
0.50
2.00
3.00
3.00
1.20
2.70
19.00
5.25
3.10
1.10
0.70
2.20
3.20
3.70
1.70
2.90
21.00
5.65
3.30
G1
G2
H
I
L
N
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
MLG50T65FUK
IGBT
TO-247 Package
Values(mm)
Items
MIN
4.90
2,27
1.85
1.07
1.90
1.75
2.87
2.87
0.55
20.82
16.25
1.05
15.70
13.10
3.68
1.68
MAX
5.16
2.53
2.11
1.33
2.41
2.15
3.38
3.13
0.68
21.10
17.65
1.35
16.03
14.15
5.10
2.60
A
A1
A2
B
B1
B2
B3
B4
C
D
D1
D2
E
E1
E2
E3
e
5.44
L
19.80
4.17
3.50
5.49
6.04
20.31
4.47
3.70
6.00
6.30
L1
Φ
P
Q
S
MLG50T65FUK
SHENZHEN MINOS TECHNOLOGY CO.,LTD
Rev1.0
12/2022
MLG50T65FUK
IGBT
NOTE:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness
of the heat sink.
3.
IGBTs is the device which is sensitive to the static electricity, it is necessary to protect the
device from being damaged by the static electricity when using it.
4.
Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to
change without prior notice.
CONTACT:
深圳市迈诺斯科技有限公司（总部）
Address
：深圳市福田区华富街道田面社区深南中路
4026
号田面城市大厦
22B-22C
Phone
：
0755-83273777
MLG50T65FUK
Rev1.0
SHENZHEN MINOS TECHNOLOGY CO.,LTD
12/2022
