Minos-MLS65R380P

Description  

MLS65R380P, the silicon N-channel Enhanced MOSFETs,  

is obtained by advanced Super Junction technology which  

reduce the conduction loss, improve switching performance.  

The transistor is suitable device for SMPS,high speed  

switching and general purpose applications.  

KEY CHARACTERISTICS  

① V

DS

=650V,I

D

=11A R

DS(ON)

<0.33mΩ@V

GS

=10V  

FEATURES  

1

Fast Switching  

2

100% avalanche tested  

3

Improved dv/dt capability  

APPLICATIONS  

①High frequency switching mode power supply  

Package Marking And Ordering Information

：

 

Ordering Codes  

Package  

Product Code  

Packing  

MLS65R380P  

TO-220F  

M65R380P  

Tube  

Electrical Characteris

tics @ Ta=25

℃

 

(unless otherwise specified)  

Limited Parameters:  

Symbol  

V

DSS  

I

D  

Parameter  

Value  

650  

11  

Units  

Drain-to-Source Breakdown  

V

A

Voltage  

(continuous)  

Drain Current  

Drain Current  

Gate to Source  

at Tc=25

℃

 

I

DM  

A

(pulsed)  

33  

V

GS  

Voltage  

±

20  

V

Total  

at Tc=25

℃  

31  

P

tot  

W

℃

mj  

Dissipation  

T

j  

Max.  

Junction  

Temperature  

Energy  

Pulse Avalanche  

150  

250  

Operating  

Single  

Eas  

Electrical Parameters:  

Parameter  

Test Conditions  

V

GS

I

D

=250

µ

A  

=0V,  

Min  

Max  

Unit  

Symbol  

Typ  

Drain-source Voltage  

V

DS  

V

650  

Static Drain-to-Source  

on-Resistance  

VGS=10V,ID=3.8A  

Ω

m

0.33  

0.38  

DS(on)  

R

Voltage  

Gated Threshold  

µ

V

DS

=V

GS, D

=250 A  

V

GS(th)  

2

4

V

Drain-Source Leakage  

Current  

µ

A  

nA  

nA  

=

V,  

=

V

DS

650 V

GS

0V  

1.0  

I

DSS  

Gate-Source Forward  

Leakage  

V

GS  

= +30V  

100  

I

GSS(F)  

I

GSS(R)  

Gate-Source Reverse  

Leakage  

=

V

GS

-30V  

-100  

Input Capacitance  

Output Capacitance  

Reverse Transfer  

Capacitance  

770  

560  

pF  

pF  

C

iss  

VGS = 0V  

C

oss  

VDS = 25  

Vf = 1.0MHz  

25  

pF  

C

rss  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

21.8  

4.5  

8

nC  

nC  

nC  

Q

g  

ID =4.8A  

VDD =520V  

VGS = 10V  

Q

gs  

Q

gd  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Unit  

t

d(on)  

Turn-on Delay Time  

11  

nS  

ID =4.8A  

VDD =400V  

VGS =10  

t

r  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

9

nS  

nS  

nS  

t

d(off)  

t

f  

38  

8

VRG=5Ω  

Source-Drain Diode Characteristics  

Values  

Symbol  

Parameter  

Test Conditions  

Units  

Min.  

—  

Typ.  

Max.  

Continuous Source Current (Body  

I

S  

—  

11  

A

A

V

Diode)  

Maximum Pulsed Current (Body  

Diode)  

TC=25 °C  

I

SM  

V

SD  

—  

—  

33  

Diode Forward Voltage  

IS=4.8A, VGS=0V(Note4)  

—  

—  

0.9  

Reverse Recovery Time  

Reverse Recovery Charge  

Reverse Recovery Current  

T

rr  

—  

—  

—  

285  

3135  

22  

—  

—  

—  

ns  

nC  

A

IS=4.8A,  

Tj = 25°C  

dIF/dt=100A/us, VGS=0V  

Q

rr  

I

rrm  

Characteristics Curves  

Figure 1a Safe Operating Area (No FullPAK)  

Figure 1b Safe Operating Area (FullPAK)  

Figure 2a Power Dissipation (No FullPAK)  

Figure 2b Power Dissipation (FullPAK)  

Figure 6 Typical Drain to Source ON Resistance vs Drain  

Current  

Figure 7 Typical Drian to Source on Resistance vs Junction  

Temperature  

Figure 8 Typical Theshold Voltage vs Junction  

Temperature  

Figure 9 Typical Breakdown Voltage vs Junction  

Temperature  

Figure Typical

 

Theshold Voltage vs Junction  

10  

Figure 11 Typical Breakdown Voltage vs  

Temperature  

Junction  

Temperature  

Test Circuit and Waveform  

Figure 12 Gate Charge Test Circuit  

Figure 13 Gate Charge Waveforms  

Figure 15 Resistive Switching Waveforms  

Figure 17 Diode Reverse Recovery Waveform  

Figure 14 Resistive Switching Test Circuit  

Figure 16 Diode Reverse Recovery Test Circuit  

Figure 18 Unclamped Inductive Switching Test Circuit  

Figure 19 Unclamped Inductive Switching Waveform  

Package Description  

Values(mm)  

Items  

MIN  

9.60  

MAX  

10.4  

A

B

15.4  

8.90  

4.30  

2.10  

2.40  

0.60  

0.30  

1.12  

16.2  

9.50  

4.90  

3.00  

3.00  

1.00  

0.60  

1.42  

B1  

C

C1  

D

E

F

G

H

3.40  

1.60  

12.0  

3.80  

2.90  

14.0  

L

2.34  

3.15  

2.90  

2.74  

3.55  

3.30  

N

Q

φp  

TO-220F Package  

NOTE:  

1.

Exceeding the maximum ratings of the device in performance may cause damage to the device,  

even the permanent failure, which may affect the dependability of the machine. Please do not  

exceed the absolute maximum ratings of the device when circuit designing.  

2.

When installing the heat sink, please pay attention to the torsional moment and the smoothness of  

the heat sink.  

3.

MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device  

from being damaged by the static electricity when using it.  

4.

Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to  

change withoutprior notice.  

CONTACT:  

深圳市迈诺斯科技有限公司（总部）  

地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C  

邮编：518025  

电话：0755-83273777