Minos-MPF8N65

MPF8N65

Product Description  

Silicon N

–

Channel MOSFET  

Features  

Application  

•

650V, 8A  

•

Switch Mode Power Supply (SMPS)  

•

Uninterruptible Power Supply (UPS)  

•

Power Factor Correction (PFC)  

•

R

DS(ON)

= 1.4Ω (Max.) @ V

GS

= 10

V

, I

D

= 4A  

•

Fast switching  

•

100% avalanche tested  

•

Improved dv/dt capability  

•

RoHS and Halogen

–

Free Compliant  

Package  

TO

–

220F  

MPF8N65  

Absolute Maximum Ratings

T

C

=25

℃

unless otherwise specified  

Symbol  

Parameter  

Max.  

Units  

Drain

–

Source Voltage  

Gate

–

Source Voltage  

V

DSS  

V

GSS  

I

D  

650  

V

V

± 30  

Continuous Drain Current

note5  

T

C

= 25

℃

 

T

C

= 25

℃  

8

32  

A

I

DM  

Pulsed Drain Current

note3  

A

P

D  

Power Dissipation

note2  

35  

W

E

AS  

Single Pulse Avalanche Energy

note3.6  

Thermal Resistance, Junction to Case  

Thermal Resistance, Junction to Ambient

note1,4  

Operating and Storage

T

e

mperature Range  

281  

mJ  

℃

/W  

℃

/W  

℃

R

θ

JC  

R

θ

JA  

T

J

, T

STG  

3.6  

62.5  

–

55 to +150  

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A

Sili  

MPF8N65

Product Description  

con

N

–

C hannel M O SFET  

Electrical Characteristics

T

C

=25

℃

unless otherwise specified  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max.  

Units  

Off Characteristic  

BV

DSS  

I

DSS  

Drain

–

Source Breakdown Voltage  

Drain

–

Source Leakage Current  

Gate to Body Leakage Current  

V

GS

= 0

V

,

I

D

= 250μA  

V

DS

= 650

V

,

V

GS

= 0V  

V

DS

= 0

V

,

V

GS

= ±30V  

650  

–

–

–

–

1

V

–

–

μA  

nA  

I

GSS  

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

R

DS(on)

Static Drain

–

Source On

–

Resistance  

Dynamic Characteristics  

V

DS

= V

GS

, I

D

= 250μA  

V

GS

= 10

V

,

I

D

= 4A  

2

–

4

V

–

1.17  

1.4  

Ω

C

iss  

C

oss  

C

rss  

Input Capacitance  

–

–

–

870  

97  

–

–

–

pF  

pF  

pF  

V

DS

= 25

V

,

V

GS

= 0

V

,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

9.6  

Switching Characteristics  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

r  

T

o

tal Gate Charge  

–

–

–

–

–

–

–

22  

5

–

–

–

–

–

–

–

V

DS

= 520

V

,

I

D

= 8A,  

V

GS

= 10V  

Gate

–

Source Charge  

Gate

–

Drain(“Miller”) Charge  

Turn

–

On Delay Time  

Turn

–

On Rise Time  

nC  

ns  

5.5  

12  

20  

74  

33  

V

DS

= 100

V

,

I

D

= 8A,  

R

G

= 25Ω, V

GS

=10V  

t

d(off)  

t

f  

Turn

–

Off Delay Time  

Turn

–

Off Fall Time  

Diode Characteristics  

V

DS  

t

rr  

Diode Forward Voltage

note3  

I

S

=8A . V

GS

= 0V  

I

SD

=8A, V

GS

= 0V  

dl

SD

/dt=100A/μs  

–

–

–

–

1.4  

V

Reverse Recovery Time  

506  

2.7  

–

–

ns  

nC  

Q

rr  

Reverse Recovery Charge  

Notes:  

1. The value of R

θJC

is measured in a still air environment with TA =25°C and the maximum allowed junction temperature of 150°C. The  

value in any given application depends on the user’s specific board design.  

2. The power dissipation P

D

is based on T

J(MAX)

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper  

dissipation limit for cases where additional heatsinking is used.  

3. Single pulse width limited by junction temperature T

J(MAX)

=150°C.  

4. The R

θJA

is the sum of the thermal impedance from junction to case R

θJ

C

and case to ambient.  

5. The maximum current rating is package limited.  

6.

The EAS data shows Max. rating. The test condition is V

DS

=50V,V

GS

=10V,L=10mH  

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Sili  

MPF8N65

Product Description  

con

N

–

C hannel M O SFET  

Typical Performance Characteristics  

Figure 2. Body Diode Forward Voltage  

vs Source Current and Temperature  

Figure 1. Output Characteristics  

Figure 3. Normalized On Resistance  

vs Junction Temperature  

Figure 4. Normalized On Resistance  

vs Junction Temperature  

Figure 5. Capacitance Characteristics  

Figure 6. Gate Charge Characteristics  

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Sili  

M

PF

8

N

65

Product Description  

con

N

–

C hannel M O SFET  

Figure 7. Normalized Breakdown Voltage  

vs Junction Temperature  

Figure 8. Maximum Safe Operating Area  

Figure 9. Maximum Effective Transient Thermal Impedance, Junction

–

to

–

Case  

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Sili  

MPF8N65

Product Description  

con

N

–

C hannel M O SFET  

TO

–

220F Package Mechanical Data  

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A