Minos-MPG100N03S
| Part # | Minos-MPG100N03S |
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Silicon N-Channel Power MOSFET
Description
The MPG100N03S uses advanced technology and design to provide
excellent R
DS(ON)
. It can be used in a wide variety of applications.
General Features
① V
DS
=30V, I
D
=100A
② Low ON Resistance
③ Low Reverse transfer capacitances
④ 100% Single Pulse avalanche energy Test
Schematic diagram
Application
① Power switching application
② Adapter and charger
Electrical Characteristics
@ Ta=25
℃
(unless otherwise specified)
TO-263
Package Marking And Ordering Information
Ordering Codes
Package
Product Code
Packing
MPG100N03-S
TO-263
MPG100N03S
Tube
Absolute Maximum Ratings:
Symbol
V
DSS
I
D
Parameter
Value
Units
Drain-to-Source Breakdown Voltage
Drain Current (continuous) at Tc=25
℃
Drain Current (pulsed)
30
100
400
+/-30
120
175
700
V
A
I
DM
A
V
GS
P
tot
T
j
Gate to Source Voltage
V
W
℃
mJ
Total Dissipation at Tc=25
℃
Max. Operating Junction Temperature
Single Pulse Avalanche Energy
E
AS
Electrical Parameters:
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
DS
Drain-source Voltage
VGS =0V, ID=250µA
30
V
Static Drain-to-Source
on-Resistance
R
DS(on)
V
GS(th)
VGS =10V, ID=20A
4.2
1.5
5.0
2.0
mΩ
V
Gated Threshold Voltage
VDS=VGS, ID=250µA
1.0
Drain to Source leakage
Current
I
DSS
VDS=30V, VGS = 0V
VGS = +30V
1.0
100
-100
µA
nA
nA
I
GSS(F)
I
GSS(R)
Gated Body Foward Leakage
Gated Body Reverse Leakage
VGS = -30V
C
iss
C
oss
C
rss
Input Capacitance
2315
190
11
pF
pF
pF
VGS =0V,
VDS=25V,
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on Delay Time
28
nS
t
r
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
21
62
32
40
9.2
14
nS
nS
nS
nC
nC
nC
V
DD
=20V,I
D
=50A, R
G
=10Ω
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=20V I
D
=50A V
GS
=10V
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
SD
S-D Current(Body Diode)
100
A
I
SDM
V
SD
t
rr
Pulsed S-D Current(Body Diode)
Diode Forward Voltage
400
1.5
A
V
V
GS
=0V, I
DS
=30A
Reverse Recovery Time
555
4550
nS
µC
T
J
=25
℃
,I
F
=30A
di/dt=100A/us
Q
rr
Reverse Recovery Charge
*Pulse Test: Pulse Width <= 300µs, Duty Cycle< =2%
Symbol
R
θJC
Parameter
Junction-to-Case
Typ
2.5
Units
℃
/W
Package Information
Values
（
MM
）
Items
MIN
9.80
8.90
0
MAX
10.40
9.50
0.10
4.80
1.37
0.95
0.60
1.47
1.80
1.37
16.50
2.30
0.2
A
B
B1
C
4.40
1.16
0.70
0.30
1.07
1.30
0.95
14.50
1.60
0
D
E
F
G
H
K
L1
L2
I
Q
R
0°
8°
0.4
0.4
N
2.39
2.69
TO-263 package
NOTE:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness of
the heat sink.
3.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device
from being damaged by the static electricity when using it.
4.
Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to
change withoutprior notice.
CONTACT:
深圳市迈诺斯科技有限公司（总部）
地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C
邮编：518025
电话：0755-83273777
