Minos-MPG160N04P
| Part # | Minos-MPG160N04P |
Download  | Minos-MPG160N04P |
Silicon N-Channel Power MOSFET
Description
The MPG160N04 uses advanced technology and design to provide
excellent RDS(ON) . It can be used in a wide variety of applications.
General Features
①
VDS=40V, Rdson<3.5mΩ @VGS=10V, ID=160A (Typ:2.5mΩ)
②
Low ON Resistance
③
Low Reverse transfer capacitances
④
100% Single Pulse avalanche energy Test
Application
① Power
Switching application
② Adapter
and charger
TO-220
Package Marking And Ordering Information
：
Ordering Codes
Package
Product Code
Packing
Tube
MPG160N04-P
TO-220
MPG160N04P
Electrical Characteristics
@ Ta=25
℃
(unless otherwise specified)
Limited Parameters:
Symbol
Parameter
Value
Unit
V
DSS
I
D
Drain-to-Source Breakdown Voltage
Drain Current (continuous) at Tc=25
℃
Drain Current (Pulsed)
40
V
A
160
640
±30
200
175
700
I
DM
V
GS
P
tot
T
j
A
Gate to Source Voltage
V
W
℃
mJ
Total Dissipation at Tc=25
℃
Max. Operating Junction Temperature
Single Pulse Avalanche Energy
Eas
Electrical Parameters:
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Drain-source Voltage
V
DS
V
GS
=0V, I
D
=250
µ
A
40
V
Static Drain-to-Source
on-Resistance
R
DS(on)
V
GS(th)
V
GS
=10V, I
D
=50A
2.5
2.7
3.5
3.2
mΩ
Gated Threshold Voltage
2.0
V
V
DS
=V
GS,
I
D
=250
µ
A
Electrical Parameters:
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Drain-source Voltage
V
DS
V
GS
=0V, I
D
=250
µ
A
40
V
Static Drain-to-Source
on-Resistance
R
DS(on)
V
GS(th)
I
DSS
V
GS
=10V, I
D
=50A
V
DS
=V
GS,
I
D
=250
µ
A
V
DS
=40V, V
GS
= 0V
2.5
2.7
3.5
3.2
1.0
mΩ
V
Gated Threshold Voltage
2.0
Drain to Source leakage
Current
µ
A
Gated Body Foward Leakage
I
GSS(F)
I
GSS(R)
V
GS
= +20V
V
GS
= -20V
100
nA
nA
Gated Body Reverse Leakage
-100
Input Capacitance
C
iss
C
oss
C
rss
3315
230
18
pF
pF
pF
V
GS
=0V,
V
DS
=25V,
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Symbol
t
d(on)
Parameter
Test Conditions
Min
Typ
34
Max
Unit
nS
Turn-on Delay Time
t
r
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
26
nS
V
DD
=20V,I
D
=50A,
R
G
=10Ω
t
d(off)
t
f
72
nS
39
nS
Q
g
Q
gs
Q
gd
47
nC
nC
nC
V
DS
=20V
I
D
=50A
V
GS
=10V
11.2
19
Source-Drain Diode Characteristics
Symbol
I
SD
Parameter
Test Conditions
Min
Typ
Max
160
640
1.5
Unit
A
S-D Current(Body Diode)
I
SDM
V
SD
t
rr
Pulsed S-D Current(Body Diode)
Diode Forward Voltage
A
V
GS
=0V, I
DS
=100A
V
Reverse Recovery Time
555
4550
nS
µ
C
T
J
=25
℃
,I
F
=100A
di/dt=100A/us
Q
rr
Reverse Recovery Charge
*Pulse Test: Pulse Width <= 300
µ
s, Duty Cycle< =2%
Symbol
R
θJC
Parameter
Typ
Units
Junction-to-Case
2.5
℃
/W
Package Description
Values(mm)
Items
MAX
MIN
A
9.60
10.6
B
B1
C
15.0
8.90
4.30
2.30
1.20
0.70
0.30
1.17
2.70
12.6
2.34
2.40
3.50
16.0
9.50
4.80
3.10
1.40
0.90
0.60
1.37
3.80
14.8
2.74
3.00
3.90
C1
D
E
F
G
H
L
N
Q
φp
TO-220 Package
NOTE:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness of
the heat sink.
3.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device
from being damaged by the static electricity when using it.
4.
Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to
change withoutprior notice.
CONTACT:
深圳市迈诺斯科技有限公司（总部）
地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C
邮编：518025
电话：0755-83273777
