Minos-MPG30N06

Green Product  

MPG30N06  

60V N-Channel Power MOSFET  

KEY CHARACTERISTICS  

●

V

DS

= 60

V

,

I

D

= 30A  

DESCRIPTION  

The MPG30N60 uses advanced trench technology to provide  

excellent R

DS(ON)

, low gate charge. It can be used in a wide  

variety of applications.  

R

DS(ON)

< 30

mΩ @ V

GS

=10V  

R

DS(ON)

< 40

mΩ @ V

GS

=4.5V  

●

High density cell design for lower Rdson  

●

Fully characterized avalanche voltage and current  

●

Good stability and uniformity with high EAS  

●

Excellent package for good heat dissipation  

100% UIS TESTED

！

 

Application  

●

Power switching application  

●

Hard switched and High frequency circuits  

●

Uninterruptible power supply  

100% DVDS TESTED

！  

Schematic diagram  

Package Marking And Ordering Information  

Device Marking  

Ordering Codes  

Package  

Product Code  

Packing  

30N06  

MPG30N06-P  

TO-220  

30N06  

Reel  

Absolute Maximum Ratings (T

A

=25

℃

 

Parameter  

unless otherwise noted)  

Symbol  

V

DS  

Limit  

Unit  

Drain-Source Voltage  

60  

V

V

Gate-Source Voltage  

±20  

V

GS  

Drain Current-Continuous  

30  

A

I

D  

Drain Current-Pulsed

(Note 1)  

80  

44  

A

I

DM  

W

mJ  

℃

Maximum Power Dissipation(Tc=25

℃

)  

Single pulse avalanche energy

(Note 2)  

Operating Junction and Storage Temperature Range  

P

D  

56  

E

AS  

-55

T

o

1

75  

T

J

,T

STG  

Thermal Characteristic  

Thermal Resistance,Junction-to-Case  

R

θJ

C  

3.4  

℃

/W  

Page1  

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Green Product  

MPG30N06  

Electrical Characteristics (TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ Max Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

On Characteristics  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250μA  

V

DS

=60V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

60  

–

–

–

–

–

1

V

μA  

nA  

I

GSS  

–

±100  

Gate Threshold Voltage  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250μA  

V

GS

=10V, I

D

=10A  

V

GS

=4.5V, I

D

=10A  

V

DS

=5V,I

D

=10A  

1.3  

1.8  

25  

30  

11  

2.3  

30  

40  

–

V

mΩ  

S

–

–

–

Drain-Source On-State Resistance

(Note 3)  

Forward Transconductance  

Dynamic Characteristics  

Input Capacitance  

C

lss  

C

oss  

C

rss  

–

–

–

670  

76  

–

–

–

pF  

pF  

pF  

V

DS

=25V,V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

66  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

19.2  

6.4  

29.2  

8.2  

21  

–

–

–

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=30V, ID=10A,  

V

GS

=10V,R

GEN

=10

Ω  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

–

–

–

V

DS

=48V,I

D

=10A  

V

GS

=10V  

Gate-Source Charge  

5

Gate-Drain Charge  

6.5  

Drain-Source Diode Characteristics  

Diode Forward Voltage  

Reverse Recovery Time  

Reverse Recovery Charge  

V

SD  

T

rr  

V

GS

=0V,I

S

=20A  

–

–

–

–

1.2  

V

33.6  

32.1  

–

–

nS  

nC  

Tj=25

℃，

IF=10A

，

di/dt=100A/uS  

Q

rr  

Notes:  

1. Repetitive Rating: Pulse width limited by maximum junction temperature.  

2. E

AS

condition :T

j

=25

℃

,V

DD

=30V,V

GS

=10V,L=0.5mH,Rg=25

Ω

 

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  

4. Guaranteed by design, not subject to production.  

Page2  

V1.0  

Green Product  

MPG30N06  

Characteristics Curves  

Figure 1 Output Characteristics  

Figure 2 Transfer Characteristics  

Figure 3 On-Resistance vs. I

D

and V

GS  

Figure 4 On-Resistance vs. Junction Temperature  

Figure 5 On-Resistance vs. V

GS  

Figure 6 Body Diode Forward Voltage  

Page3  

V1.0  

Green Product  

MPG30N06  

Figure 7 Gate-Charge Characteristics  

Figure 8 Capacitance Characteristics  

Figure 9

 

Maximum Forward Biased Safe  

Operation Area  

Figure 10 Single Pulse Power Rating  

Junction-to-Ambient  

Figure 11  

Normalized Maximum Transient Thermal Impedance  

Page4  

V1.0  

Green Product  

MPG30N06  

Test Circuit and Waveform  

Gate Charge Test Circuit  

Gate Charge Test Waveform  

Resistive Switching Test Circuit  

Resistive Switching Test Waveforms  

Unclamped Inductive Switching (UIS) Test Circuit

 

Unclamped Inductive Switching (UIS) Test Waveforms  

Diode Recovery Test Circuit  

Diode Recovery Test Waveforms  

Page5  

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Green Product  

MPG30N06  

Package Description  

V

a

lues(mm)  

Items  

MIN  

6.30  

0

MAX  

6.90  

0.13  

6.30  

2.50  

0.60  

0.90  

1.00  

0.60  

1.20  

10.50  

3.10  

1.00  

5.50  

2.49  

A

A1  

B

5.70  

2.10  

0.30  

0.60  

0.70  

0.30  

0.70  

9.60  

2.70  

0.60  

5.10  

2.09  

C

D

E1  

E2  

F

G

L1  

L2  

H

M

N

R

0 .3  

T

1.40  

5.10  

1.60  

6.30  

Y

TO-252

Package  

Page6  

V1.0  

Green Product  

MPG30N06  

NOTE:  

1.

Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent  

failure, which may affect the dependability of the machine. Please do not exceed the absolute maximum ratings of  

the device when circuit designing.  

2.

When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink.  

3.

MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being  

damaged by the static electricity when using it.  

4.

Shen

zhen Minos

reserves the right to make changes in this specification sheet and is subject to change without  

prior notice.  

CONTACT:  

深圳

市迈诺斯科

技有限公司（总部）  

Address

：深圳市福田区华

富街道

田

面社

区深

南

中路

4026

号田

面

城市大厦

22B-22C  

M

obile

：

13632637333  

Ph

one

：

0755-83273777  

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