Minos-MPT037N08
| Part # | Minos-MPT037N08 |
Download  | Minos-MPT037N08 |
85
V N-Channel Power MOSFE
Description
MPT037N08,the N-channel Enhanced Power MOSFETs,
is obtained by advanced double trench technology which
reduce the conduction loss,improve switching performance
and enhance the avalanche energy. This is suitable device
for BMS and high current switching applications.
General Features
① V
DS
=85V, R
dson
<3.7mΩ @V
GS
=10V, I
D
=180A (Typ:3mΩ)
② Fast
Switching
③ Low
On-Resistance ( R
DS(on)
≤3.7mΩ)
④ Low
Gate Charge
⑤ Low
Reverse transfer capacitances
⑥ High
avalanche ruggedness
⑦ RoHS
product
Application
① BMS
TO-263
TO-220
② Motor
drivers
Package Marking And Ordering Information
：
Ordering Codes
MPT037N08-P
MPT037N08-S
Package
TO-220
TO-263
Product Code
MPT037N08P
MPT037N08S
Packing
Tube
Tape Reel
at T
C
=25°C
，
unless otherwise specified
ABSOLUTE RATINGS
Symbol
Parameter
Rating
Units
Drain-Source Voltage
85
185
V
A
V
DSS
Continuous Drain
Current, Silicon
Limited
Continuous Drain
Current, Package Limited
Continuous Drain
Current @T
C
=100°C, Silicon
Limited
Pulsed Drain
Current
120
A
I
D
117.2
480
A
Note1
A
I
DM
Gate-Source Voltage
±20
V
V
GS
Note2
Avalanche Energy
E
AS
240.2
mJ
Power Dissipation
208.3
W
P
D
Derating Factor above
25°C
1.67
W/
℃
T
J
，
T
stg
Operating Junction and Storage Temperature
Maximum Temperature
for Soldering
Range
150
，
–55 to 150
℃
℃
T
L
260
Note2
：
Note1
：
Repetitive Rating
：
Pulse width limited by maximum junction temperature
L=0.5mH, Ias=35A, Start T
J
=25
℃
Thermal characteristics
Symbol
R
θJC
Parameter
Max
0.5
Units
℃
/W
℃
/W
thermal resistance,
Junction-Case
thermal resistance,
Junction-Ambient
62.5
R
θJA
Electrical Characteristics
at T
C
=25°C, unless otherwise specified
OFF Characteristics
Values
Symbol
Parameter
Test Conditions
Units
Min
Typ
Max
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250µA
V
DS
=100V, V
GS
=0V
85
95
—
V
V
DSS
—
—
—
—
1
µA
µA
Drain-Source Leakage
Current
I
DSS
V
DS
=80V, V
GS
=0V
@T
C
=125°C
100
Gate-Source Forward
Leakage
Gate-Source Reverse
Leakage
V
GS
=+20V
V
GS
=-20V
—
—
—
—
100
nA
nA
I
GSS(F)
I
GSS(R)
-100
ON Characteristics
Values
Test Conditions
Units
Symbol
Parameter
Min
—
Typ
3
Max
3.7
m
Ω
Drain-Source On-Resistance
Gate Threshold Voltage
V
GS
=10V, I
D
=50A
R
DS( on)
V
DS
=V
GS
, I
D
=250µA
2.0
3.0
4.0
V
V
GS(th)
Pulse width tp
≤
300µs,
δ≤
2%
Dynamic Characteristics
Values
Test Conditions
Units
Symbol
Parameter
Min
Typ
Max
Input Capacitance
—
6234
—
C
iss
C
oss
C
rss
Q
g
V
DS
=42.5V, V
GS
=0,
f=1MHz
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
—
—
—
—
—
1181
97
—
—
—
—
—
pF
124
31.2
39.2
V
DD
=42.5V, I
D
=50A,
V
GS
=10V
Gate-Source charge
Gate-Drain charge
nC
Q
gs
Q
gd
Switching Characteristics
Values
Typ
41
Symbol
Parameter
Test Conditions
Units
Min
—
Max
—
Turn-On Delay
Time
Rise Time
t
d( on)
t
r
t
d( off)
t
f
68
—
—
V
DD
=42.5V, I
D
=10A,
V
GS
=10V, R
G
=3Ω,
Resistive Load
ns
76
Turn-Off Delay
Time
Fall Time
—
—
—
44
—
Source-Drain Diode Characteristics
Values
Symbol
Parameter
Test Conditions
Units
Min
—
Typ
—
Max
120
480
1.2
—
Continuous Source
Current
Maximum Pulsed
Current
Diode Forward Voltage
A
A
I
S
—
—
I
SM
V
SD
T
rr
Q
rr
V
GS
=0V, I
S
=50A
—
—
V
Reverse Recovery Time
—
80
112
ns
uC
I
s
=30A
，
di/dt=100A/us
Reverse Recovery
Charge
—
—
Characteristics Curves
Figure 2. Maximum Power Dissipation vs Case
Temperature
Figure 1. Safe Operating Area
Figure 3. Maximum Continuous Drain Current vs Case
Temperature
Figure 4. Typical Output Characteristics
Figure 5. Transient Thermal Impedance
Figure 7. Source-Drain Diode Forward Characteristics
Figure 6. Typical Transfer Characteristics
Figure 8. Drain-Source On-Resistance vs Drain Current
Figure 9. Normalized On-Resistance vs Junction
Temperature
Figure 10. Normalized Threshold Voltage vs Junction
Temperature
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
Figure 13. Typical Gate Charge vs Gate-Source Voltage
Figure 12. Capacitance Characteristics
Test Circuit and Waveform
Figure 14. Resistive Switching Test Circuit
Figure 15. Resistive Switching Waveforms
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveforms
Figure 18. Diode Reverse Recovery Test Circuit
Figure 19. Diode Reverse Recovery Waveform
Figure 20. Unclamped Inductive Switching Test Circuit
Figure 21. Unclamped Inductive Switching Waveform
Package Description
Values(mm)
Items
MIN
9.60
MAX
10.6
A
B
15.0
8.90
4.30
2.30
1.20
0.70
0.30
1.17
2.70
12.6
2.34
2.40
3.50
16.0
9.50
4.80
3.10
1.40
0.90
0.60
1.37
3.80
14.8
2.74
3.00
3.90
B1
C
C1
D
E
F
G
H
L
N
Q
TO-220 Package
Values(mm)
Items
MAX
MIN
9.80
8.90
0
A
B
10.40
9.50
0.10
4.80
1.37
0.95
0.60
1.47
1.80
1.37
16.50
2.30
0.2
B1
C
4.40
1.16
0.70
0.30
1.07
1.30
0.95
14.50
1.60
0
D
E
F
G
H
K
L1
L2
I
Q
R
0
°
8
°
0.4
N
2.39
2.69
TO-263 Package
NOTE:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. Please do not
exceed the absolute maximum ratings of the device when circuit designing.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness of
the heat sink.
3.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device
from being damaged by the static electricity when using it.
4.
Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to
change withoutprior notice.
CONTACT:
深圳市迈诺斯科技有限公司（总部）
地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C
邮编：518025
电话：0755-83273777
