Minos-NJW0281G

MINOS Silicon NPN Triple Diffused Type  

Power Amplifier Applications  

①

Complementary to NJW0302G  

②

High collector voltage:VCEO=230V (min)  

③

Recommended for 100-W high-fidelity audio frequency amplifier  

Output stage  

Note1: Using continuously under heavy loads (e.g. the application of  

high temperature/current/voltage and the significant change in  

temperature, etc.) may cause this product to decrease in the  

reliability significantly even if the operating conditions (i.e.  

operating temperature/current/voltage, etc.) are within the  

absolute maximum ratings.  

TO-3P  

ORDERING INFORMATION  

Ordering Codes  

Package  

Product Code  

Packing  

Tube  

NJW0281G  

TO-3P  

NJW0281G  

Absolute Maximum Ratings(Tc=25

℃

):  

Characteristics  

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

Collector current  

Symbol  

Rating  

Unit  

V

CBO  

V

CEO  

V

EBO  

I

C  

230  

230  

5

V

V

V

A

A

15  

Bese current  

1.5  

I

B  

P

C  

150  

150  

-55~150  

Collector power dissipation(Tc=25

℃

)  

Junction temperature  

W

℃

T

j  

℃

Storage temperature range  

T

STG  

Electrical Characteristics (Tc=25

℃

):  

Test Condition  

Min Typ Max  

Unit  

uA  

uA  

V

Characteristics  

Collector cut-off current  

Symbol  

I

CBO  

V

CB

=230V; I

E

=0  

V

EB

=5V; I

c

=0  

10  

10  

Emitter cut-off current  

I

EBO  

Collector-emitter breakdown voltage  

V

(BR)CEO  

h

FE  

230  

80  

I

C

=50mA,I

B

=0  

V

CE

=5V; I

C

=1A;  

V

CE

=5V; I

C

=7A;  

160  

Dc current gain  

h

FE(2)  

35  

Collector-emitter saturation voltage  

V

CE

(sat)  

I

C

=8A; I

B

=0.8A  

V

CE

=5V;I

C

=7A  

V

CE

=5V; I

C

=1A  

3.0  

1.5  

V

Base-emitter voltage  

Transition frequency  

V

BE  

f

T  

30  

MHz  

Symbol  

Paramter  

Junction-to-Case  

Typ  

Units  

℃

/W  

R

θJC  

0.35  

TYPICAL CHARACTERISTICS  

Package Information  

TO-3PB PACKAGE  

NOTE:  

1.

Exceeding the maximum ratings of the device in performance may cause damage to the device,  

even the permanent failure, which may affect the dependability of the machine. Please do not  

exceed the absolute maximum ratings of the device when circui

t

d

esigning.  

2.

When installing the heat sink, please pay attention to the torsional moment and the smoothness of  

the heat sink.  

3.

MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device  

from being damaged by the static electricity when usin

g

i

t.  

4.

Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to  

change withoutprior notice.  

CONTACT:  

深圳市迈诺斯科技有限公司（总部）  

地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C  

邮编：518025  

电话：0755-83273777