miracle-MGZ31N65
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MGZ31N65
650V GaN FET Enhancement Mode
Features
650V, 6.5A, R
DS(on)
(typ.) = 230mΩ@VGS = 8V.
Very low Q
RR
S
DFN8X8-3L
Bottom View
Reduced Crossover Loss
Easy to drive with commonly-used gate drivers
D
G
Enables AC-DC bridgeless totem-pole PFC designs
—
Increased power density
—
Reduced system size and weight
—
Overall lower system cost
Achieves increased efficiency in both hard- and soft
ꢀ
switched circuits
Application
Power adapters
Low power SMPS
Lighting
Absolute Maximum Ratings
（
Tc = 25
°
C unless otherwise noted
）
Symbol
V
DS
Parameter
Limit
650
Unit
V
Drain-Source Voltage
V
(TR)DSS
V
GSS
Transient Drain to Source Voltage
a
Gate-Source Voltage
800
V
± 18
V
P
D
Maximum power Dissipation @T
C
= 25°C
21.6
W
A
Drain Current-Continuous
Drain Current-Continuous
Drain Current-Pulsed
T
C
= 25°C
b
6.5
I
D
T
C
= 100°C
b
4.1
A
I
DM
T
C
Pulse Width = 10μs
30
A
Operating
T
emperature Case
-55 to +150
-55 to +150
-55 to +150
260
°C
°C
°C
°C
T
J
Operating Temperature Junction
Storage Temperature
T
S
T
SOLD
Soldering Peak Temperature
c
Thermal Characteristics
Symbol
Parameter
Typical
5.8
Unit
°C/W
°C/W
R
θJC
R
θJA
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
d
52
Miracle
T
echnology Co., Ltd.
– 1 –
Rev 1.0
MGZ31N65
650V GaN FET Enhancement Mode
Electrical Characteristics
（
T
J
= 25
°
C unless otherwise noted
）
Off Characteristics
Symbol
Parameter
Test Condition
V
GS
= 0V
Min. Typ. Max. Unit
V
(BL)DSS
Reverse Breakdown Voltage
650
–
–
10
V
V
GS
= 0V, V
DS
= 650V
T
J
= 25
°
C
V
GS
= 0V, V
DS
= 650V
T
J
= 150
°
C
–
–
–
1.0
2.0
–
μA
μA
nA
I
DSS
Reverse Leakage Current
–
Gate-to-source Leakage
Current
I
GSS
V
DS
= 0V, V
GS
= ±18V
±100
On Characteristics
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
=500μA
1.6
2.1
230
405
2.6
300
–
V
V
GS
= 8V, I
D
=5A
T
J
= 25°C
V
GS
= 8V, I
D
=5A
T
J
= 150°C
–
–
R
DS(on)eff
On Resistance
mΩ
Dynamic Characteristics
Symbol
Parameter
Test Condition
Min. Typ.
Max. Unit
C
ISS
Input Capacitance
–
–
–
–
–
793
33
–
–
–
–
–
V
GS
= 0 V,
V
DS
= 400 V
f=1MHz
C
OSS
C
RSS
C
o(er)
C
o(tr)
Output Capacitance
Transfer Capacitance
pF
pF
2.7
99
Output Capacitance,
energy related
Output Capacitance,
time related
V
GS
= 0 V,
V
DS
= 0~400 V
71
On Characteristics
Symbol
t
d(on)
t
r
Parameter
Test Condition
Min. Typ. Max. Unit
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
–
–
–
–
–
–
–
–
13
25
–
–
–
–
–
–
–
–
V
GS
= 0~8 V,
V
DS
= 400 V ,
I
D
= 4 A ,
ns
t
d(off)
t
f
47
Rg = 30 Ω
34
Q
G
9.0
1.6
2.4
28
V
GS
= 0~8 V,
V
DS
= 400 V ,
I
D
= 4 A
Q
GS
Q
GD
Q
OSS
nC
nC
V
GS
=0V,V
DS
=0~400 V
Miracle
T
echnology Co., Ltd.
– 2 –
Rev 1.0
MGZ31N65
650V GaN FET Enhancement Mode
Drain-Source Diode Characteristics
Symbol
Parameter
Reverse Current
Test Condition
V
GS
= 0 V
Min.
Typ.
Max. Unit
I
S
–
–
6.5
A
V
GS
= 0V,
I
S
= 2 A
V
GS
= 0V,
I
S
= 5 A
–
–
–
–
1.2
2.0
14
–
–
–
–
V
V
V
SD
Reverse Voltage
t
RR
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
I
S
= 5 A ,V
DS
= 400V,
di/dt = 200 A/μs
Q
RR
11
Notes:
a. In off-state, spike duty cycle D<0.01, spike duration <1μs .
b. For increased stability at high current operation.
c. Reflow MSL3 .
d. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm
2
copper area
and 70µm thickness).
Miracle
T
echnology Co., Ltd.
– 3 –
Rev 1.0
MGZ31N65
650V GaN FET Enhancement Mode
Typical Characteristics
(T
C
= 25°C unless otherwise noted)
Figure 1.
Typical Output Characteristics T
J
=25°C
Parameter: V
GS
Figure 2.
Typical Output Characteristics T
J
= 150°C
Parameter: V
GS
Figure 3.
Typical Transfer Characteristics V
DS
=10V
Parameter: T
J
Figure 4.
Normalized On-resistance
I
D
= 16 A, V
GS
= 10 V
Figure 5.
Typical Capacitance
V
GS
= 0V, f = 1MHz
Figure 6.
Typical C
OSS
Stored Energy
Miracle
T
echnology Co., Ltd.
– 4 –
Rev 1.0
MGZ31N65
650V GaN FET Enhancement Mode
Typical Characteristics
(T
C
= 25°C unless otherwise noted)
Figure 8.
Typical Gate Charge
I
DS
= 10A, V
DS
= 400V
Figure 7. Typical
Q
OSS
Figure 9.
Forward Characteristics of Rev.
Diode I
S
= f(V
SD
), Parameter T
J
Figure 10. Safe Operating Area T
C
= 25°C
(calculated based on thermal limit)
Figure 11. Safe Operating Area T
C
= 80°C
(calculated based on thermal limit)
Figure 12. Power Dissipation
Miracle
T
echnology Co., Ltd.
– 5 –
Rev 1.0
MGZ31N65
650V GaN FET Enhancement Mode
Typical Characteristics
(T
C
= 25°C unless otherwise noted)
Figure 13. Transient Thermal Resistance
Figure 14. Switching Time Test Circuit
Figure 15. Switching Time Waveform
Figure 16. Diode Characteristics Test Circuit
Figure 17. Diode Recovery Waveform
Miracle
T
echnology Co., Ltd.
– 6 –
Rev 1.0
MGZ31N65
650V GaN FET Enhancement Mode
DFN8X8-3L Package Information
Revision History
Version
0.1
Date
Subjects (major changes since last revision)
2021-05-07 Preliminary
Version
1.0
2021-12-10
Datasheet Complete
Miracle
T
echnology Co., Ltd.
– 7 –
Rev 1.0
