MOT-MOT16N50HSF
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MOT16N50SA
MOT16N50HSF
N-CHANNEL MOSFET
Symbol
PRODUCT CHARACTERISTICS
2
.
D
rain
VDSS
500V
0.38Ω
33
nC
16A
R
DS
(on)typ(
@
V
GS
=10 V)
Qg@type
ID
1.Gate
APPLICATIONS
3
.
Source
mode power supplies
High efficiency switch
Electronic lamp ballasts
LED power
supplies
*
*
*
based on half bridge
FEATURES
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
TO-220F
TO-220
ORDER INFORMATION
Order codes
Package
Packing
Halogen
Halogen-Free
N/A
N/A
50
pieces
/
T
u
be
50
pieces
/
T
u
be
MOT16N50HSF
MOT16N50SA
T
O
-220F
T
O
-220
(T
C
= 25°C, unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
Ratings
Parameter
Symbol
V
DSS
Unit
V
500
±30
16
Drain to Source Voltage
Gate to Source Voltage
Avalanche Current (Note 2)
V
GSS
I
AR
V
A
I
D
16
A
Continuous
Continuous Drain Current
Avalanche Energy
I
DM
Pulsed (Note 2)
64
A
mJ
mJ
E
AS
E
AR
Single Pulsed (Note 3)
Repetitive (Note 2)
637
25.0
V/ns
W
dv/dt
4.5
38.5
300
Peak Diode Recovery dv/dt (Note 4)V/ns
TO-220F
Power Dissipation
TO-220AB
P
D
W
Junction Temperature
Storage Temperature
T
J
°C
°C
+150
-55 ~ +150
T
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=5.23mH, I
AS
=15A, V
DD
= 50V, R
G
=25
Ω
, Starting T
J
=25°C
4. I
SD
≤
15A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25°C
-1-
MOT16N50SA
MOT16N50HSF
N-CHANNEL MOSFET
(T =25°C,
unless otherwise noted)
C
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Statics
Drain to Source Breakdown Voltage
B
= 250µA, V
= 0V
500
–
–
–
V
I
VDSS
D
GS
o
∆
B
/
∆
T
J
ID=1mA
0.58
–
V/°C
Breakdown Voltage
T
e
mp. Coefficient
Drain to Source On-Resistance
Reference to 25 C,
VDSS
r
= 10
V
, I
=
8
A
–
0.38
0.45
Ω
V
DS(ON)
GS
D
V
= V
, I
= 250µA
2.0
3.4
4.0
V
Gate Threshold Voltage
V
V
V
GS(th)
DS
GS
= 500V
= 0V
D
o
T
T
= 25 C
–
–
–
–
–
–
25
DS
GS
C
Zero Gate Voltage Drain Current
I
µA
nA
DSS
GSS
o
= 150
C
250
C
Gate to Source Leakage Curren
I
= ±30V
±100
GS
Dynamics
g
= 10
V
, I
=
7
.5A
10
–
–
S
Forward
T
r
ansconductanc
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
fs
V
DD
D
Q
V
V
= 10V,
= 400V,
= 16A
–
–
33
41
–
nC
nC
g(TOT)
GS
DS
7
.
2
Q
Q
gs
I
D
–
–
12
9
–
–
nC
ns
Gate to Drain “Miller” Charge
T
u
rn-On Delay Time
Rise Time
gd
t
d(ON)
V
= 250
V
,
= 16A,
= 6.2
Ω
,
= 17
Ω
DD
t
–
–
–
5
.
4
26
5
–
–
–
nS
nS
nS
r
I
D
t
R
R
d(OFF)
G
D
T
u
rn-Off Delay Time
Fall Time
t
f
C
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
ISS
–
–
–
1850
230
16
–
–
–
pF
pF
pF
V
= 25V, V
= 0V,
GS
DS
C
OSS
RSS
f = 1MHz
C
Avalanche Characteristics
2
E
I
Single Pulse Avalanche Energy
760
–
–
–
mJ
A
AS
–
16
Avalanche Current
AR
Drain-Source Diode Characteristics
Continuous Source Current
I
S
–
–
–
15
64
A
A
1
I
Pulsed Source Current
–
SM
V
= 16A
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
Notes:
I
SD
SD
–
–
–
0.86
470
5
1.2
730
6.6
V
t
= 16A, di
/dt = 100A/µs
SD
ns
µC
rr
I
I
SD
Q
= 16A, di
/dt
RR
SD
SD
1: Repetitive
rating; pulse width limited by maximum junction temperature
2: Starting
T =
25°C, L = 7.0mH, I
= 15A
J
AS
-2-
MOT16N50SA
MOT16N50HSF
N-CHANNEL MOSFET
TEST CIRCUITS AND WAVEFORMS
100
o
100
10
1
o
T
= 25
C
T
= 175
C
J
J
V
DESCENDING
V
DESCENDING
GS
GS
10V
6V
5.5V
5V
4.5V
4V
10V
6.5V
6V
5.5V
5V
4.5V
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
1
10
100
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
Output Characteristics
Figure 2.
Output Characteristics
60
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
PULSE DURATION = 80
µ
s
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
VDD = 100V
50
40
30
20
10
0
TJ = 175
o
C
TJ = 25
o
C
V
= 10V, I
= 7.5A
D
GS
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (
o
C)
V
G
S
, GATE TO SOURCE VOLTAGE (V)
Figure 3.
Transfer Characteristics
Figure 4.
Normalized Drain To Source On
Resistance vs Junction Temperature
4000
1000
15
C
ISS
I
D
= 15A
12
9
100V
250V
C
OSS
400V
6
100
C
RSS
3
V
GS
= 0V, f = 1MHz
0
10
1
10
100
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 5.
Capacitance vs Drain To Source
Voltage
Figure 6.
Gate Charge Waveforms For Constant
Gate Current
-3-
MOT16N50SA
MOT16N50HSF
N-CHANNEL MOSFET
T PICAL
CHARACTERISTICS
Y
30
25
20
100
10
T
C
= 25
o
C
100µs
1ms
15
T
J
= 175
o
C
T
J
= 25
o
C
10ms
DC
10
5
1.0
0.1
OPERATION IN THIS AREA
LIMITED BY R
DS(ON)
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
10
100
1000
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
V
D
S
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7.
Body Diode Forward Voltage vs Body
Diode Current
Figure 8.
Maximum Safe Operating Area
16
12
8
50
If R = 0
AV
If R
≠
0
t
= (L)(I
)/(1.3*RATED BV
– V
DD
)
AS
DSS
t
= (L/R)ln[(I
*R)/(1.3*R
A
T
ED BV
– V
) +1]
DSS DD
AV
AS
10
o
STARTING T
= 25
C
J
4
o
STARTING T
= 150
C
J
0
25
1
0.01
50
75
100
125
150
175
0.1
1
10
50
T
C
, CASE TEMPER
A
T
URE (
o
C)
t
AV
, TIME IN AVALANCHE (ms)
Figure 9.
Maximum Drain Current vs Case
Temperature
Figure 10.
Unclamped Inductive Switching
Capability
0
10
0.50
0.20
t
1
-1
10
0.10
0.05
P
D
t
2
DUTY FACTOR, D = t
/ t
1
2
0.02
PEAK T
= (P
D
X Z
X R
) + T
J
C C
J
θ
JC
θ
0.01
SINGLE PULSE
-2
10
-5
-4
-3
-2
-1
10
0
1
10
10
10
10
10
10
-4-
