MOT-MOT9166T

MOT9166T  

MOT  

N-CHANNEL MOSFET  

PRODUCT CHARACTERISTICS  

„

Symbol  

Drain  

VDSS  

200V  

6mΩ  

R

DS

(on)Typ(V

GS

@

=10 V)  

114A  

ID  

Gate  

„

„

APPLICATIONS  

Source  

Hig

h

p

ower system inverter  

Light electric wehicles  

D

BMS  

Drones  

FEATURES  

Surface-mounted package  

Advnced terch cell design  

Super trench  

G

S S S S S S S  

(T

C

= 25°C unless otherwise noted)  

ABSOLUTE MAXIMUM RATINGS  

Parameter  

„

Max  

–

Min  

Conditions  

Symbol  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

200  

V

T

C

= 25

℃

 

T

C

= 25

℃  

V

GS  

–

–

–

–

±20  

114  

81  

V

A

T

C

= 25

℃

, V

GS

= 10 V  

T

C

= 100

℃

, V

GS

= 10 V  

T

C

= 25

℃

, V

GS

= 10 V  

T

C

= 25

℃  

Drain Current ( DC )  

I

D  

A

Drain Current ( Pulsed )  

I

DM  

P

tot  

T

stg  

T

J  

456  

300  

175  

175  

114  

A

Drain power dissipation  

–

W

Storage Temperature  

-55  

℃

Junction Temperature  

–

–

℃

Continuous-Source Current  

Single Pulsed Avalanche Energy  

Thermal Resistance- Junction to Ambie  

Thermal Resistance- Junction to Case  

I

S  

A

T

C

= 25

℃  

E

AS  

R

θJA  

R

θJC  

V

D

D

=50V , L=1.0mH  

mJ  

–

–

–

1800  

40  

℃

/W  

0.5  

1

MOT9166T  

MOT  

N-CHANNEL MOSFET  

ELECTRICAL CHARACTERISTICS  



( T

C

=25°C, unless otherwise specified)  

Typ  

Unit  

Max  

Symbol  

Min  

Parameter  

Conditions  

Static Characteristics  

Drain-Source Breakdown Voltage  

Gate Threshold Voltage  

Drain Leakage Current  

Gate Leakage Current  

BV

DSS  

V

GS(th)  

I

DSS  

V

GS

= 0 V,

 

I

DS

= 250 μA  

V

DS

= V

GS

, I

DS

= 250 μA  

V

DS

= 160 V, V

GS

= 0 V  

V

GS

= 0 V, V

GS

= ± 20 V  

V

GS

= 10 V, I

DS

= 50 A  

V

GS

= 6

 

V, I

DS

= 30 A  

200  

–

–

–

–

–

V

V

2

–

4

1

μA  

I

GSS  

–

±100 nA  

–

6.0 7.1  

6.4 7.8  

On-State Resistance  

R

DS(ON)  

m

Ω

 

–

Diode Characteristics  

Diode Forward Voltage  

Reverse Recovery Time  

Reverse Recovery Charge  

Dynamic Characteristics  

Input Capacitance  

V

SD  

t

rr  

I

SD

= 50 A, V

GS

= 0 V  

–

–

–

–

1.3  

V

148  

805  

–

–

nS  

nC  

I

DS

= 50 A, V

GS

= 0 V  

dl

SD

/dt = 100 A/μs  

Q

rr  

C

iss  

C

oss  

C

rss  

t

d

(on)  

t

r  

–

–

–

–

–

–

–

11636  

570  

60  

–

–

–

–

–

–

–

V

GS

= 0 V, V

DS

=100V  

Frequency = 1 MHz  

Output Capacitance  

pF  

nS  

Reverse Transfer Capacitance  

Turn-on Delay Time  

25  

V

DS

=100V, V

GEN

= 10 V,  

R

G

= 3.9 Ω, R

L

=2 Ω,  

I

DS

= 50 A  

Turn-on Rise Time  

70  

Turn-off Delay Time  

t

d

(off)  

t

f  

135  

84  

Turn-off Fall Time  

Gate Charge Characteristics  

Total Gate Charge  

Q

g  

–

–

–

186  

58  

–

–

–

V

DS

=100V, V

GS

= 10 V,  

I

DS

= 50 A  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

nC  

31  

2

MOT  

MOT9166T  

N-CHANNEL MOSFET  



TYPICAL CHARACTERISTICS  

Power Capability  

Current Capability  

400  

350  

300  

250  

200  

150  

100  

50  

150  

125  

100  

75  

50  

25  

T

C

=25

o

C,V

G

=10V  

T

C

=25

o

C  

25 50 75

 

100 125 150 175 200  

0

0

0

0

25 50 75

 

100 125 150 175 200  

T

j

– Junction Temperature (°C)  

T

j

– Junction Temperature (°C)  

Safe Operating Area  

Transient Thermal Impedance  

2

1

1000  

Duty = 0.5  

t

i

m

Li  

0.2  

0.1  

n)  

(o  

ds  

100  

10  

1

R

100us  

0.05  

0.02  

0.01  

300us  

1ms  

0.1  

10ms  

DC  

Single Pulse  

Mounted on 1in

2

pad  

R

q

JC

: 0.5

o

C/W  

T

C

=25

o

C  

0.1  

0.1  

0.01  

0.01  

1

10  

100  

1000  

1E-4  

0.001  

0.01  

0.1  

1

V

DS

– Drain-Source Voltage (V)  

Square Wave Pulse Duration (sec)  

3

MOT9166T  

MOT  

N-CHANNEL MOSFET  



TYPICAL CHARACTERISTICS(Cont.)  

Output Characteristics  

On Resistance  

480  

20  

18  

16  

14  

12  

10  

8

440  

400  

360  

320  

280  

240  

200  

160  

120  

80  

V

GS

= 6,7,8,9,10V  

5V  

V

GS

= 6V  

V

GS

=10V  

6

4

4V  

2

40  

0

0

0

0

1

2

3

4

5

6

7

8

9

80  

160  

240  

320  

400  

480  

V

DS

– Drain-Source Voltage (V)  

I

D

– Drain Current (A)  

Transfer Characteristics  

Normalized Threshold Voltage  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

20  

I

DS

= 250



A  

I

DS

= 50A  

19  

18  

17  

16  

15  

14  

13  

12  

11  

10  

9

8

7

6

5

-50 -25  

0

25 50 75

 

100 125 150 175  

1

2

3

4

5

6

7

8

9

10  

V

GS

– Gate-Source Voltage (V)  

T

j

– Junction Temperature (°C)  

4

MOT9166T  

MOT  

N-CHANNEL MOSFET  



TYPICAL CHARACTERISTICS(Cont.)  

Normalized On Resistance  

Diode Forward Current  

3.6  

3.2  

460  

100  

V

GS

= 10V  

I

DS

= 50A  

T

j

=175

o

C  

2.8  

2.4  

2.0  

1.6  

1.2  

0.8  

0.4  

0.0  

T

j

=25

o

C  

10  

R

ON

@T

j

=25

o

C: 6.4m

W

 

1

-50 -25  

0

25 50 75

 

100 125 150 175  

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4  

T

j

– Junction Temperature (°C)  

V

SD

– Source-Drain Voltage (V)  

Capacitance  

Gate Charge  

10  

16000  

14000  

12000  

10000  

8000  

6000  

4000  

2000  

0

V

DS

= 100V  

Frequency=1MHz  

I

DS

= 50A  

8

Ciss  

6

4

2

Coss  

Crss  

40  

160  

200  

80  

120  

0

20 40 60 80

 

100 120 140 160  

V

DS

– Drain-Source Voltage (V)  

0

Q

G

– Gate Charge (nC)  

0

5

MOT9166T  

MOT  

N-CHANNEL MOSFET  

■

TOLL-8L PACKAGE OUTLINE DIMENSIONS  

Dimesions In Millimeters  

Symbol  

Min.  

Max.  

A

b

2.20  

0.70  

9.70  

0.42  

0.40  

10.28  

3.10  

9.70  

7.90  

2.40  

0.90  

9.90  

0.50  

0.60  

10.58  

3.50  

10.10  

8.30  

b1  

b2  

c

D

D2  

E

E1  

e

1.20BSC  

8

H

11.48  

6.75  

11.88  

7.15  

H1  

N

J

3.00  

3.98  

1.40  

0.60  

0.50  

1.00  

4

°

 

3.30  

4.38  

1.80  

0.80  

0.70  

1.30  

10

°  

K1  

L

L1  

L2  

L4  

θ

6