MSKSEMI-2N7002DWH6327-MS
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2N7002DWH6327-MS
Product specification
General Features
Application
Motor Drive
Power
T
ools
LED Lighting
60
V
,
0.3
A
,
R
DS
(
O
N)=1.8Ω@VGS=10V
Improved dv/dt capability
Fast switching
Green Device Available
G-S ESD Protection Diode Embedded
Reference News
PACKAGE OUTLINE
Pin Configuration
D2
Marking
D1
K72**
G1
SOT-363
S2
Copyright© Msksemi Incorporated
Absolute Maximum Ratings (TA=25
℃
unless otherwise
Symbol
Parameter
Rating
60
Units
Drain- Source
Voltage
V
DS
V
GS
V
V
A
A
A
Gate- Sou
r
ce Voltage
±
20
Drain Current – Continuous
(
T
A
=
25
C
)
Drain Current – Continuous
(
T
A
=
70
C
)
0.3
0.24
1.2
I
D
Drain Current – Pulsed
1
I
DM
P
D
Power Dissipation (
T
A
=
2 5
C
)
0.28
W
Power Dissipation –
Derate above
2
5
C
W/
℃
0.002
Storage Temperature Range
-50 to 150
℃
℃
T
STG
T
J
Operating Junction Temperature Range
-50 to 150
Thermal
Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Thermal Resistance Junction to ambient
R
θ
J
A
450
℃/
W
—
ElectricalCharacteristics
(
T =25
℃
,
u
nlessotherwise noted)
J
Off Characteristics
Symbol
Typ.
Parameter
Conditions
Min.
Max. Unit
Drain- Source
Breakdown Voltage
VGS=0V , ID=250uA
—
—
—
BVDSS
△
BVDSS/
△
TJ
60
—
V
BVDSS
T
emperature Coefficient
Drain- Source
Leakage Current
Reference to
2
5C ,
I
D=
1
m
A
V/
℃
0.04
—
—
—
V
=60V
,
,
V
=0V
=0V
,
,
DS
GS
GS
1
A
A
A
IDSS
T =25C
J
—
—
V
=48V
V
DS
100
±10
T =125C
J
Gate- Source
Leakage Current
VGS= ±20V , VDS=0V
IGSS
—
On Characteristics
VGS=10V , ID=0.3A
1.8
2.8
Static Drain-
Source On-
Resistance
—
—
RDS(ON)
VGS(th)
VGS=4.5V , ID=0.2A
2.2
1.6
-4
3
Gate Threshold Voltage
1
2.5
—
V
VGS=VDS , ID =250uA
VGS( th)
T
emperature Coefficient
Mv/
℃
—
△
VGS(th
)
gfs
Forward Transconductance
—
—
VDS=10V , ID=0. 1A
0.24
S
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Dynamic and switching Characteristics
2 , 3
Total Gate Charge
Qg
1.1
—
2 , 3
Gate-Source Charge
VDS=30V
ID=0.2A
,
VGS=10V
,
nC
Qgs
Qgd
0.1
—
—
2 , 3
Gate-Drain Charge
0.23
3
2 , 3
Turn-On Delay Time
—
—
—
—
—
—
Td(on)
Tr
2 , 3
Rise Time
5
VDD=30V , VGS=10V ,
RG=6 ID=0.2A
nS
pF
2 , 3
Turn-Off Delay Time
2 , 3
Td(off)
Tf
14
9
Fall Time
Input Capacitance
Ciss
Coss
Crss
30.6
5.5
4
VDS=10V
F=1MHz
,
VGS=0V
,
Output Capacitance
Reverse Transfer Capacitance
—
Symbol
IS
Parameter
Conditions
Min.
Typ.
Max.
0.3
Unit
A
Continuous Source Current
—
—
VG
=
V
D=0V , Force Current
Pulsed Source Current
Diode Forward Voltage
—
—
—
—
ISM
0.6
A
VGS
=
0V ,
I
S=1A , TJ=25C
VSD
1.2
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
Essentially independent of operating temperature.
2.
3.
Copyright© Msksemi Incorporated
T ,
Juction
T
emperature (
℃
)
J
V
DS
, Drain to Source Voltage (V)
Fig. 2
Continuous Drain Current vs.
T
J
Fig. 1
Output Characteristics
T ,
Junction
T
emperature (
℃
)
J
T
, JunctionTemperature
(
℃
)
J
Normalized RDSON vs.
T
J
Fig. 3
Fig. 4
Normalized V
vs. T
th
J
Qg , Gate Charge (nC)
Fig. 5
Gate Charge Waveform
V
, Drain to Source Voltage
(
V
)
DS
Fig. 6
Capacitance Characteristics
Copyright© Msksemi Incorporated
V
DS
,
D
rain to Source Voltage
(
V)
Square Wave Pulse Duration (s
)
Fig. 7
Normalized Transient Impedance
Fig. 8
Maximum Safe Operation Area
Copyright© Msksemi Incorporated
PACKAGE MECHANICAL DATA
Suggested Pad Layout
P/N
QTY
PKG
2N7002DWH6327-MS
SOT-363
3000
Copyright© Msksemi Incorporated
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing
equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
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or contained
herein are controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from theauthorities
concerned in accordance
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of MSKSEMI Semiconductor.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
Semiconductor productthat you intend to use.
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