MSKSEMI-2N7002KM
| Part # | MSKSEMI-2N7002KM |
Download  | MSKSEMI-2N7002KM |
2N7002KM
Semiconductor
Compiance
Features
D
60V,200mA, RDS(ON) =1.7Ω@VGS = 10V
Fast switching
Green Device Available
G
Applications
S
Notebook
Smartphone
SOT-723
Battery Protection
Hand-held Instruments
D
BVDSS
60V
RDSON
1.7Ω
ID
G
200mA
S
Absolute Maximum Ratings
Tc=25
℃
unless otherwise noted
Symbol Parameter
Rating
60
Units
V
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
±
20
V
Drain Current – Continuous (T
A
=25
℃
)
Drain Current – Continuous (T
A
=70
℃
)
200
mA
mA
mA
mW
mW/
℃
℃
I
D
160
I
DM
P
D
Drain Current – Pulsed
1
800
Power Dissipation (T
A
=25
℃
)
156
Power Dissipation – Derate above 25
℃
Storage Temperature Range
1.25
T
STG
T
J
-55 to 150
-55 to 150
℃
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Thermal Resistance Junction to ambient
Typ.
Max.
800
Unit
℃
/W
R
θJA
—
2N7002KM
Semiconductor
Compiance
Electrical Characteristics
(T
J
=25
℃
, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
60
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
DS
=60V , V
GS
=0V , T
J
=25
℃
V
DS
=48V , V
GS
=0V , T
J
=125
℃
—
10
nA
nA
nA
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
100
±
100
V
GS
=
±
20V , V
DS
=0V
—
—
On Characteristics
V
GS
=10V , I
D
=0.15A
V
GS
=4.5V , I
D
=0.1A
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=0.1A
—
—
1.6
1.7
2
3
4
R
DS(ON)
Static Drain-Source On-Resistance
V
GS(th)
gfs
Gate Threshold Voltage
1.0
—
3.0
—
V
S
Forward Transconductance
0.3
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
—
—
—
—
—
—
—
—
—
—
2
0.9
0.4
3
V
DS
=30V , V
GS
=10V , I
D
=0.1A
nC
ns
V
DD
=30V , V
GS
=10V , R
G
=6
5
T
d(off)
T
f
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
I
D
=0.1A
14
9
C
iss
C
oss
C
rss
Input Capacitance
25
15
6.8
V
DS
=30V , V
GS
=0V , F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
Conditions
Min.
—
Typ.
—
Max.
200
400
1
Unit
mA
mA
V
V
G
=V
D
=0V , Force Current
I
SM
—
—
V
GS
=0V , I
S
=0.1A , T
J
=25
℃
V
R
=50V, I
S
=0.1A ,
V
SD
T
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
18
6
ns
dI/dt=100A/µs, T
J
=25
℃
Q
rr
nC
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
2. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially
independent of operating temperature.
2N7002KM
Semiconductor
Compiance
T
C
, Case Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.1 Continuous
Drain Current vs. T
C
Fig.2 Normalized
RDSON vs. T
J
Qg , Gate Charge (nC)
T
J
, Junction Temperature (
℃
)
Fig.3 Normalized
V
th
vs. T
J
Fig.4 Gate
Charge Waveform
V
DS
, Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
Fig.6 Maximum
Safe Operation Area
Fig.5 Normalized
Transient Response
2N7002KM
Semiconductor Compiance
-V
DS
90%
10%
-V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.7 Switching
Time Waveform
Fig.8 Gate
Charge Waveform
2N7002KM
Semiconductor
Compiance
SOT-723 PACKAGE INFORMATION
Dimensions In Millimeters
Dimensions In Inches
Symbol
MAX
MIN
MAX
MIN
A
A1
B
0.4BSC
0.8BSC
0.016BSC
0.031BSC
1.250
0.850
1.250
0.390
0.050
0.270
0.220
0.110
13°
1.150
0.750
1.150
0.370
0.000
0.220
0.170
0.009
9°
0.049
0.033
0.049
0.015
0.002
0.011
0.009
0.004
13°
0.045
0.030
0.045
0.015
0.000
0.009
0.007
0.000
9°
C
D
E
F
G
G1
H
I
L
0.250
11°
0.150
7°
0.010
11°
0.006
7°
J
REEL SPECIFICATION
P/N
PKG
QTY
8
000
2N7002KM
SOT-723
2N7002KM
Semiconductor
Compiance
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you
before using any MSKSEMI Semiconductor products described or contained herein in such applications.
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
circuitsfor safedesign, redundant design, and structural design.
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from theauthorities concerned in
accordance with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written permission of MSKSEMI Semiconductor.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
MSKSEMI Semiconductor productthat you intend to use.
