MSKSEMI-2N7002NXAKR-MS
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2N7002NXAKR-MS
Product specification
Application
Features
Motor Drive
60V,0.3A, RDS(ON) =2.2Ω@VGS=10V
Power Tools
LED Lighting
Improved dv/dt capability
Fast switching
Green Device Available
G-S ESD Protection Diode Embedded
ESD protected up to 2KV
BVDSS
60V
RDSON
2.2
Ω
ID
0.3A
Reference News
PACKAGE OUTLINE
Pin Configuration
Marking
72K
SOT-23
Absolute Maximum Ratings
(
T
A=25
℃
unless otherwise noted)
Symbol
V
DS
Rating
Parameter
Units
Drain- Source
Voltage
Gate- Sou
r
ce Voltage
60
V
V
V
GS
±
20
0.3
0.1
0.8
Drain Current – Continuous
(
T
C
=25
℃
)
Drain Current – Continuous (T
C
=100
℃
)
A
I
D
A
Drain Current – Pulsed
1
A
I
DM
Power Dissipation (T
C
=25
℃
)
0.35
W
W/
℃
℃
P
D
0.003
Power Dissipation – Derate above 2
5
℃
Storage Temperature Range
-50 to 150
-50 to 150
T
STG
T
J
Operating Junction Temperature Range
℃
Copyright© Msksemi Incorporated
2N7002NXAKR-MS
Thermal Characteristics
Symbol
Typ.
Parameter
Thermal Resistance Junction to ambient
Max.
Unit
357
℃
/
W
R
θJA
—
Electrical Characteristics
(TJ=25
℃
, unless otherwise noted)
Off Characteristics
Conditions
V
GS
=0V , I
D
=250uA
Symbol
Typ.
Parameter
Min.
Max.
Unit
Drain- Source
Breakdown Voltage
60
V
BV
DSS
—
—
—
—
—
1
ṷA
ṳA
ṳA
V
DS
=60V , V
GS
=0V , T
J
=25
℃
V
DS
=48V , V
GS
=0V , T
J
=125
℃
—
—
—
Drain- Source
Leakage Current
Gate- Source
Leakage Current
I
DSS
I
GSS
10
V
GS
±
20V , V
DS
=0V
=
±
10
On Characteristics
V
GS
=10V , I
D
=0.3A
V
GS
=4.5V , I
D
=0.2A
V
GS
=V
DS
, I
D
=250uA
Ω
Ω
V
2.2
2 4
1.6
0.5
2.8
3 0
—
Static Drain-
Source On-
Resistance
R
DS(ON)
—
1
Gate Threshold Voltage
2.5
V
GS
(
t
h)
gfs
Forward Transconductance
V
DS
=10V , I
D
=0.3A
S
—
—
Dynamic and switching Characteristics
,
3
Total Gate Charge
2
3.7
0.9
0.4
3
5.6
1.4
0.6
6
Q
g
—
—
—
—
—
—
—
—
—
—
Gate
–
S
ource Charge
2
,
3
V
DS
=30V , V
GS
=10V , I
D
=1A
Q
gs
n
C
,
3
Gate
–
D
rain Charge
2
Q
gd
Turn-On Delay Time
2
,
,
3
T
d(on)
Rise Time
2 , 3
V
DD
=30V ,V
GS
=10V , R
G
=6
Ω
5
10
27
17
38
26
12
T
r
ns
Turn-Off Delay Time
2
3
I
D
=0.2A
14
9
T
d(off)
Fall Time
2 , 3
T
f
Input Capacitance
Output Capacitance
25.5
17
7.8
C
iss
C
oss
C
rss
V
DS
=30V , V
GS
=0V , F=1MHz
p
F
Reverse Transfer Capacitance
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Typ.
Parameter
Continuous Source Current
Pulsed Source Current
Conditions
Min.
Max.
0.3
Unit
A
I
S
—
—
—
—
—
—
—
V
G
=
V
D
=0V , Force Current
1.2
A
I
SM
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.2
V
V
GS
=0V , I
S
=1A , T
J
=25
℃
V
GS
=50V, I
S
=1A , dI/dt=100A/µs
T
J
=25
℃
—
ns
3.4
—
—
0.7
Q
rr
n
C
Note :
1.Repetitive Rating :
Pulsed width limited by maximum junction temperature.
2 . The data tested by pulsed ,
pulse width
≦
3
0 0
u
s
, duty cycle
≦
2
%.
3.
E
ssentially
independent of operating temperature.
Copyright© Msksemi Incorporated
2N7002NXAKR-MS
T
C
, Case Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.1 Continuous
Drain Current vs. T
C
Fig.2 Normalized
RDSON vs. T
J
Qg , Gate Charge (nC)
T
J
, Junction Temperature (
℃
)
Fig.3 Normalized
V
th
vs. T
J
Fig.4 Gate
Charge Waveform
Square Wave Pulse Duration (s)
V
DS
, Drain to Source Voltage (V)
Fig.5 Normalized
Transient Impedance
Fig.6 Maximum
Safe Operation Area
Copyright© Msksemi Incorporated
2N7002NXAKR-MS
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
Suggested Pad Layout
REEL SPECIFICATION
P/N
PKG
QTY
SOT-23
3000
2N7002N
X
AKR-MS
Copyright© Msksemi Incorporated
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have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
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at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
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performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
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or events cannot occur. Such measures include but are
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reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
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product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
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