MSKSEMI-2N7002PW
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2N7002PW
Product specification
2N7002PW
General Features
Application
Notebook
60
V
,
200mA, RDS(ON) =1.7Ω@VGS = 10V
Smartphone
Fast switching
Battery Protection
Hand
–
held Instruments
Green Device Available
Reference News
PACKAGE OUTLINE
P-Channel MOSFET
Marking
72
SOT- 323
Copyright© Msksemi Incorporated
2N7002PW
Absolute Maximum Ratings (TA=25
C
unless otherwise
Symbol
Rating
Parameter
Units
Drain- Source
Voltage
Gate- Source
Voltage
VDS
VGS
60
V
V
A
A
A
±20
Drain Current –
Continuous (
TA= 2 5
C
)
Drain Current –
Continuous (
TA= 7 0
C
)
200
160
800
156
ID
1
Drain Current –
Pulsed
Power Dissipation (
TA= 2 5
C
)
Power Dissipation –
Derate above 2
5
C
IDM
PD
W
mW/
C
1.25
Storage
Temperature
Junction
Range
-55 to 150
C
C
TSTG
TJ
Operating
Temperature
Range
-55 to 150
Thermal Characteristics
Symbol
Typ.
Parameter
Max.
Unit
Thermal
Resistance Junction to
ambient
Rθ JA
W
800
—
Electrical Characteristics ( TJ=2 5
℃
, unless otherwise noted)
Off Characteristics
Symbol
Typ.
Parameter
Conditions
Min.
Max. Unit
Drain- Source
Breakdown Voltage
VGS=
0
V ,
I
D=2
5
0
u
A
BVDSS
60
V
—
—
—
Drain- Source
Leakage Current
VDS=60V
,
,
VGS=0V
VGS=0V
,
,
10
A
A
A
—
—
—
IDSS
IGSS
TJ= 2 5
C
VDS=48V
100
—
—
TJ= 1 2 5
C
Gate- Source
Leakage Current
VGS= ±20V , VDS=0V
± 100
On Characteristics
Ω
Static Drain-
Source On- Resistance
VGS=10V , ID=0 .3A
1.8
2.8
3
RDS( ON)
—
—
Ω
VGS=4 .5V , ID=0 .2A
2.2
1.6
-4
Gate Threshold
VGS
(
t
h)
Voltage
VGS
=
V
DS , ID
=
250
u
A
1
2.5
—
V
VGS( th)
Forward
Temperature Coefficient
Transconductance
mV/
C
△
VGS
(
t
h)
—
gfs
—
—
VDS=10V , ID=0 . 1A
0.24
S
Copyright© Msksemi Incorporated
2N7002PW
Dynamic and switching Characteristics
2 , 3
Total Gate Charge
Qg
1.1
0.1
—
2 , 3
Gate- Source Charge
Qgs
Qgd
VDS
=
30V
VGS=10V
,
C
—
—
,
2 , 3
Gate- Drain Charge
0 .23
ID=0 .2A
2 , 3
Turn- On Delay Time
Td
(
o
n)
Tr
—
—
—
—
3
5
2 , 3
Rise Time
2 , 3
VDD=30V
,
Turn- Off Delay Time
S
Td
(
o
ff)
Tf
14
9
2 , 3
Fall Time
VGS=10V
ID=0 .2A
, RG=6
Input
Capacitance
Capacitance
Transfer
Ciss
Coss
Crss
—
—
30.6
5.5
4
Output
Reverse
VDS=10V
VGS=0V
F
=
1
M
Hz
,
F
,
Capacitance
—
Typ.
Symbol
IS
Parameter
Conditions
Min.
Max.
0.3
Unit
A
Continuous
Source
Current
—
—
VG= VD= 0 V
, Force
Current
Pulsed Source Current
Diode Forward
Voltage
—
—
—
—
ISM
0.6
A
VGS=
0
V ,
I
S=1A , TJ=25C
VSD
1.2
V
Note :
1.
R
epetitive Rating : Pulsed width limited by maximum junction temperature.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3.Essentially independent of operating temperature.
Copyright© Msksemi Incorporated
2N7002PW
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
Min
Max
A
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A1
A2
b
c
D
E
E1
e
0.650 TYP
0.525 REF
0.026 TYP
0.021 REF
e1
1.200
1.400
0.047
0.055
L
L1
9
0.260
0°
0.460
8°
0.010
0°
0.018
8°
Suggested Pad Layout
P/N
PKG
QTY
2N7002PW
SOT-323
3000
Copyright© Msksemi Incorporated
2N7002PW
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
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at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
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performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
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written permission of MSKSEMI Semiconductor.
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production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
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product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
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