MSKSEMI-2SC1623-MS

Part #MSKSEMI-2SC1623-MS
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MSKSEMI-2SC1623-MS
2SC1623-MS  
Product specification  

2SC1623-MS  
MARKING  
Reference News  
FEATURES  
High DC current gain :hFE=200(Typ)  
PACKAGE OUTLINE  
VCE=6V,I

C

=1mA  
High voltage:VCEO=50V  
1. BASE  
2. EMITTER  
3.COLLECTOR  
L6  
SOT-23  
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
60  
V
V

CBO  

Collector-Base Voltage  
50  
5
V
V

CEO  

V

EBO  

I

C  

Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
100  
mA  
mW  
℃
200  
P

C  

150  
T

J  

Storage Temperature  
-55-150  
T

stg  

℃
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)  
Parameter  
Symbol  
V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Typ  
Min  
60  
50  
5
Max  
Unit  
V
Test condition。  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
I

C

=
100
μA,I

E

=0  
V
I

C

= mA,I

B

=0  
1
V
I

E

=
100
μA,I

C

=0  
μA  
μA  
60  
V

CB

= V,I

E

=0  
0.1  
0.1  
600  
0.3  
1
Emitter cut-off current  
I

EBO  

V

EB

=
5
V,I

C

=0  
DC current gain  
200  
h

FE  

V

CE

=
6
V,I

C

=
1
mA  
I

C

=
100
mA,I

B

=
10
mA  
I

C

=
100
mA,I

B

=
10
mA  
V

CE

=
6
V,I

C

=
10
mA  
90  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
V
V
V

CE(sat)  

V

BE(sat)  

f

T  

MHz  
250  
CLASSIFICATION OF
 
h  
FE  
L4  
L5  
135-270  
L5  
L6  
200-400  
L6  
L7  
300-600  
L7  
Rank  
90-180  
L4  
Range  
Marking  
Copyright© Msksemi Incorporated  

2SC1623-MS  
Typical Characteristics  
Static Characteristic  
h

FE

——  
I

C  

4
3
2
1
0
1000  
100  
10  
COMMON  
EMITTER  
T

a

=25
℃
 
10uA  
9uA  
T

a

=100
℃  
8uA  
7uA  
T

a

=25
℃  
6uA  
5uA  
4uA  
3uA  
2uA  
I

B

=1uA  
COMMON EMITTER  
V

CE

= 6V  
0
2
4
6
8
0.1  
1
10  
100  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
V

CEsat

——  
I

C  

V

BEsat

——  
I

C  

2000  
1000  
300  
100  
T

a

=25
℃  
T

a

=100
℃  
T

a

=100
℃  
T

a

=25
℃  
β
=10  
β
=10  
10  
0.1  
100  
0.1  
1
10  
100  
1
10  
100  
COLLECTOR CURREMT
 
I

C

(mA)  
COLLECTOR CURREMT
 
I

C

(mA)  
I

C

—— V

BE  

f

T

—— I

C  

100  
1000  
100  
10  
10  
1
COMMON EMITTER  
V

CE

=6V  
COMMON EMITTER  
V

CE

=6V  
T

a

=25
℃  
0.1  
0.0  
0.3  
0.6  
0.9  
1.2  
70  
1
10  
COLLECTOR CURRENT
 
I

C

(mA)  
BASE-EMMITER VOLTAGE
 
V

BE

(V)  
P

C

—— T

a  

C

ob

/C

ib

——  
V

CB

/V

EB  

250  
200  
150  
100  
50  
50  
10  
f=1MHz  
I

E

=0/I

C

=0  
T

a

=25
℃  
C

ib  

C

ob  

1
0
0.1  
0
25  
50  
75  
100  
125  
150  
20  
0.1  
1
10  
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
REVERSE VOLTAGE  
V
(V)  
Copyright© Msksemi Incorporated  

2SC1623-MS  
PACKAGE MECHANICAL DATA  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
1.150  
0.100  
1.050  
0.500  
0.150  
3.000  
1.400  
2.550  
Min  
Max  
0.045  
0.004  
0.041  
0.020  
0.006  
0.118  
0.055  
0.100  
A
A1  
A2  
b
c
D
E
E1  
e
e1  
L
0.900  
0.000  
0.900  
0.300  
0.080  
2.800  
1.200  
2.250  
0.035  
0.000  
0.035  
0.012  
0.003  
0.110  
0.047  
0.089  
0.950 T
Y
P  
0.550 REF  
0.037 T
Y
P  
0.022 REF  
1.800  
2.000  
0.071  
0.079  
L1  
θ
0.300  
0°  
0.500  
8°  
0.012  
0°  
0.020  
8
°  
Suggested Pad Layout  
REEL SPECIFICATION  
P/N  
PKG  
QTY  
2SC1623-MS  
SOT-23  
3000  
Copyright© Msksemi Incorporated  

2SC1623-MS  
Attention  
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
 
have specifications
 
that can  
handle applications that require extremely high levels of reliability, such as life-support
 
systems, aircraft’s control systems, or  
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with  
your MSKSEMI Semiconductor representative
 
nearest you
 
before using any MSKSEMI Semiconductor products described  
or contained herein in such
 
applications.  
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in  
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.  
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the  
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the  
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o  
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test  
devices mounted in the customer’sproducts orequipment.  
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor  
products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could  
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing  
equipment, adopt safety measures so that these kinds of accidents
 
or events cannot occur. Such measures include but are  
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.  
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
 
or contained  
herein are controlled under any of applicable local export control laws and regulations, such products must not be exported  
without obtaining the export license from theauthorities
 
concerned in accordance
 
with the above law.  
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior  
written permission of MSKSEMI Semiconductor.  
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume  
production. MSKSEMI Semiconductor believes information herein is accurate and
 
reliable, but no guarantees are made or  
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.  
■
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI  
Semiconductor productthat you intend to use.  
Copyright© Msksemi Incorporated