MSKSEMI-2SC1815-MS

Part #MSKSEMI-2SC1815-MS
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MSKSEMI-2SC1815-MS
2SC1815-MS  
Product specification  

2SC1815-MS  
MARKING  
Reference News  
FEATURES  
High current And High voltage  
PACKAGE OUTLINE  
Excellent hFE Linearity  
Low Noise  
1. BASE  
2. EMITTER  
3.COLLECTOR  
HF  
Surface Mount device  
Complementary to 2SA1015-MS  
SOT-23  
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  
Collector-Base Voltage  
Value  
Unit  
V
60  
Collector-Emitter Voltage  
V
50  
5
V
Emitter-Base Voltage  
Collector Current  
150  
200  
625  
mA  
mW  
℃
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
P

C  

R

ΘJA  

Operation Junction
 
and  
T

J

,T

stg  

℃
-55
~
+150  
Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)  
Symbol  
Test conditions  
Min  
Typ  
Max Unit  
Parameter  
Collector-base breakdown voltage  
I

C

= 100uA,
 
I

E

=0  
60  
50  
5
V
V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
I

C

= 0.1mA, I

B

=0  
I

E

= 100uA, I

C

=0  
V

CB

=60V, I

E

=0  
V

EB

= 5V, I

C

=0  
V
V
0.1  
0.1  
400  
0.25  
1
uA  
uA  
Emitter cut-off current  
I

EBO  

V

CE

= 6V, I

C

= 2mA  
120  
80  
DC current gain  
h

FE  

Collector-emitter saturation voltage  
Base-emitter saturation voltage  
I

C

=100mA, I

B

= 10mA  
V
V
V

CE

(sat)  
V

BE

(sat)  
I

C

=100mA, I

B

= 10mA  
V

CE

=10V, I

C

= 1mA,  
f=30MHz  
Transition frequency  
MHz  
f

T  

CLASSIFICATION OF
 
h

FE  

L
H
Rank  
120-240  
200-400  
Range  
Copyright© Msksemi Incorporated  

2SC1815-MS  
Typical Characteristics  
I

C

——  
h

FE

——  
I

C  

V

CE  

5
1000  
100  
10  
16uA  
COMMON EMITTER  
T

a

=25
℃
 
14uA  
T

a

=100
℃  
T

a

=25
℃  
4
12uA  
10uA  
3
2
1
0
8uA  
6uA  
4uA  
I

B

=2uA  
COMMON EMITTER  
V

CE

= 6V  
0.1  
1
10  
100 150  
0
1
0
2
4
6
8
10  
150  
1200  
20  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
COLLECTOR CURRENT
 
I

C

(mA)  
V

BEsat

—— I

C  

V

CEsat

——  
I

C  

500  
2000  
1000  
T

a

=25
℃  
100  
T

a

=100
℃  
T

a

=100
℃  
T

a

=25
℃  
β
=10  
β
=10  
10  
100  
0.1  
150  
100  
150  
10  
100  
1
10  
100  
COLLECTOR CURREMT
 
I

C

(mA)  
COLLECTOR CURREMT
 
I

C

(mA)  
I

C

——  
V

BE  

f

T

——  
I

C  

1000  
100  
10  
150  
100  
COMMON EMITTER  

CE

= 6V  
V
10  
1
COMMON EMITTER  
V

CE

=10V  
T

a

=25
℃  
0.1  
300  
600  
900  
0.1  
1
10  
BASE-EMMITER VOLTAGE
 
V

BE

(mV)  
COLLECTOR CURRENT
 
I

C

(mA)  
C

ob

/C

ib

——  
V

CB

/V

EB  

P

C

—— T

a  

250  
200  
150  
100  
50  
50  
10  
f=1MHz  
I

E

=0/I

C

=0  
T

a

=25
℃  
C

ib  

C

ob  

0.1  
0
0.1  
1
10  
0
25  
50  
75  
100  
125  
REVERSE VOLTAGE  
V
(V)  
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
Copyright© Msksemi Incorporated  

2SC1815-MS  
PACKAGE MECHANICAL DATA  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
1.150  
0.100  
1.050  
0.500  
0.150  
3.000  
1.400  
2.550  
Min  
Max  
0.045  
0.004  
0.041  
0.020  
0.006  
0.118  
0.055  
0.100  
A
A1  
A2  
b
c
D
E
E1  
e
e1  
L
0.900  
0.000  
0.900  
0.300  
0.080  
2.800  
1.200  
2.250  
0.035  
0.000  
0.035  
0.012  
0.003  
0.110  
0.047  
0.089  
0.950 T
Y
P  
0.550 REF  
0.037 T
Y
P  
0.022 REF  
1.800  
2.000  
0.071  
0.079  
L1  
θ
0.300  
0°  
0.500  
8°  
0.012  
0°  
0.020  
8
°  
Suggested Pad Layout  
REEL SPECIFICATION  
P/N  
PKG  
QTY  
2SC1815  
SOT-23  
3000  
Copyright© Msksemi Incorporated  

2SC1815-MS  
Attention  
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
 
have specifications
 
that can  
handle applications that require extremely high levels of reliability, such as life-support
 
systems, aircraft’s control systems, or  
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with  
your MSKSEMI Semiconductor representative
 
nearest you
 
before using any MSKSEMI Semiconductor products described  
or contained herein in such
 
applications.  
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in  
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.  
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the  
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the  
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o  
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test  
devices mounted in the customer’sproducts orequipment.  
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor  
products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could  
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing  
equipment, adopt safety measures so that these kinds of accidents
 
or events cannot occur. Such measures include but are  
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.  
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
 
or contained  
herein are controlled under any of applicable local export control laws and regulations, such products must not be exported  
without obtaining the export license from theauthorities
 
concerned in accordance
 
with the above law.  
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior  
written permission of MSKSEMI Semiconductor.  
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume  
production. MSKSEMI Semiconductor believes information herein is accurate and
 
reliable, but no guarantees are made or  
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.  
■
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI  
Semiconductor productthat you intend to use.  
Copyright© Msksemi Incorporated