MSKSEMI-5N10-MS
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5N10-MS
Semiconductor
Compiance
SOT23 Pin Configuration
Product Summary
BVDSS
RDSON
105 mΩ
ID
5A
100V
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench technology
Absolute Maximum Ratings
Symbol
Parameter
Rating
100
Units
V
DS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
V
V
GS
±
20
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
5
2.2
A
A
11
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1
W
℃
℃
Storage Temperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
125
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
5N10-MS
Semiconductor
Compiance
Electrical Characteristics
T
C
=25
℃
unless otherwise specified
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
= 0V, I
D
= 250μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±20V
100
110
–
1
V
–
–
–
–
μA
nA
I
GSS
±100
On Characteristics
note3
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source On-Resistance
note2
Dynamic Characteristics
note4
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3A
1.0
–
1.95
105
3.0
V
140
mΩ
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
196
25.9
21.4
4.3
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= 50V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
= 50V, I
D
= 3A,
V
GS
= 10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
3.5
3.1
Switching Characteristics
note4
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
14.7
3.5
–
–
–
–
ns
ns
ns
ns
V
DD
= 50V, I
DS
=3A
R
G
= 2Ω, V
GEN
= 10V
20.9
2.7
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain to Source Diode Forward Current
note2
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
–
4.5
A
A
I
SM
V
SD
t
rr
12
Drain to Source Diode Forward Voltage
note3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Time Charge
Peak Reverse Recovery Current
V
GS
= 0V, I
S
=3A
–
1.3
V
32.1
39.4
2.1
–
–
–
ns
nC
A
V
GS
= 0V, I
F
= 3A,
di/dt =100A/μs
Q
rr
I
rrm
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2%.
4. Guaranteed by design, not subject to production
V
DD
=50 V, R
G
=50 Ω, L=0.3 mH, starting T
j
=25 °C
5.
5N10-MS
Semiconductor
Compiance
Typical Characteristics
4
3
2
1
0
4
V
GS
= 10V
GS
= 4.5V
V
DS
= 5V
V
3
2
1
0
V
GS
= 3.5V
V
GS
= 2.5V
V
GS
= 2V
0
1
2
3
4
5
0
1
2
3
4
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 1.Output Characteristics
Figure 2. Transfer Characteristics
2
1.5
1
1200
900
600
300
0
I
D
= 2A
0.5
0
0
3
6
9
12
15
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Gate−source voltage V
GS
(V)
Source−drain voltage V
SD
(V)
Figure 3. Forward Characteristic
s
o
f Reverse
Figure 4. R
DS(ON)
vs. V
GS
500
2.5
2.0
1.5
1.0
0.5
0.0
400
300
200
100
0
V
GS
= 4.5V
V
GS
= 10V
0
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100 125 150
Drain current I
D
(A)
Temperature T
j
(
°
C
)
Figure 5. R
DS(ON)
vs. I
D
Figure 6. Normalized R
DS(on)
vs. Temperature
3
5N10-MS
Semiconductor
Compiance
10000
1000
100
10
Ciss
Coss
Crss
F=1.0MHz
1
0
20
40
60
80
100
Drain-source voltage V
DS
（
V
）
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
5N10-MS
Semiconductor Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
REEL SPECIFICATION
QTY
P/N
PKG
3000
5N10-MS
SOT-23
5N10-MS
Semiconductor
Compiance
Attention
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
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orcontained herein.
■
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performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
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