MSKSEMI-A92

Part #MSKSEMI-A92
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MSKSEMI-A92
A92  
Semiconductor  
Compiance  
SOT-89  
FEATURES  
1. BASE  
z
z
Low Collector-Emitter Saturation Voltage  
High Breakdown Voltage  
3
2. COLLECTOR  
3. EMITTER  
2
1
MAXIMUM RATINGS (T

a

=25
℃
unless otherwise noted)  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  
Collector-Base Voltage  
Value  
-310  
-305  
-5  
Unit  
V
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
V
Collector Current
– Continuous  
Collector Current
-Pulsed  
-200  
-500  
500  
mA  
mA  
mW  
I

C
M
 

P

C  

Collector Power Dissipation  
Thermal Resistance
f
rom Junction
t
o Ambient  
R

θ
JA  

T

J

,
T

stg  

250  
℃
/
W  
℃
Operation Junction
 
and Storage Temperature Range  
-55~+150  
ELECTRICAL CHARACTERISTICS (T

a

=25
℃
unless otherwise specified)  
Parameter  
Symbol  
V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Test conditions  
I

C

=-100µA,I

E

=0  
Min  
-310  
-305  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
I

C

=-1mA,I

B

=0  
V
I

E

=-100µA,I

C

=0  
V
V

CB

=-200
V
,
I

E

=0  
-0.25  
-0.25  
-5  
µA  
µA  
µA  
µA  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
V

CE

=-200
V
,
I

B

=0  
I

CEO  

V

CE

=-300
V
,
I

B

=0  
I

EBO  

h

FE(1)  

h

FE(2)  

h

FE(3)  

V

CE(sat)  

V

BE(sat)  

f

T  

V

EB

=-5
V
,
I

C

=0  
-0.1  
V

CE

=-10
V
,
I

C

=-1mA  
V

CE

=-10
V
,
I

C

=-10mA  
V

CE

=-10
V
,
I

C

=-80mA  
I

C

=-20mA,I

B

=-2mA  
I

C

=-20mA,I

B

=-2mA  
V

CE

=-20
V
,
I

C

=-10mA,f=30MHz  
60  
100  
60  
300  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
-0.2  
-0.9  
V
V
50  
MHz  

A92  
Semiconductor  
Compiance  
h

FE

—— I

C  

Static Characteristic  
-20  
-15  
-10  
-5  
1000  
100  
10  
COMMON  
EMITTER  
T

a

=25
℃
 
-100uA  
-90uA  
-80uA  
-70uA  
-60uA  
T

a

=100

o  

C
T

a

=25

o  

C
-50uA  
-40uA  
-30uA  
-20uA  
V

CE

= -10V  
I

B

=-10uA  
-0  
-0  
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-10  
-100  
-200  
-100  
-20  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
V

CEsat

—— I

C  

V

BEsat

—— I

C  

-1000  
-800  
-600  
-400  
-200  
-400  
-300  
-200  
-100  
-0  
β
=10  
T

a

=25  
℃
T

a

=100  
℃
T

a

=100
℃  
T

a

=25  
℃
β
=10  
-1  
-10  
-100  
-1  
-10  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR CURRENT
 
I

C

(mA)  
I

C

—— V

BE  

C

ob

/ C

ib

—— V

CB

/
V

EB  

-200  
-150  
-100  
-50  
1000  
100  
10  
f=1MHz  
I

E

=0 / I

C

=0  
T

a

=25

o  

C
C

ib  

T

a

=100

o  

C
T

a

=25  
℃
C

ob  

V

CE

=-10V  
-0  
1
-0.1  
-200  
-400  
-600  
-800  
-1000  
-1  
-10  
REVERSE VOLTAGE  
V
(V)  
BASE-EMITTER VOLTAGE  
V

BE

(mV)  
f

T

——  
I

C  

P

c

—— T

a  

100  
80  
60  
40  
20  
0
0.6  
V

CE

=-20V  
T

a

=25

o  

C
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
-0  
-20  
-40  
-60  
-80  
0
25  
50  
75  
100  
125  
150  
AMBIENT TEMPERATURE
 
T

a  

(
℃
)  
COLLECTOR CURRENT
 
I

C

(mA)  

A92  
Semiconductor  
Compiance  
PACKAGE MECHANICAL DATA  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
1.600  
0.520  
0.580  
0.440  
4.600  
Min  
Max  
0.063  
0.020  
0.023  
0.017  
0.181  
A
b
b1  
c
1.400  
0.320  
0.400  
0.350  
4.400  
0.055  
0.013  
0.016  
0.014  
0.173  
D
D1  
E
E1  
e
e1  
L
1.550 REF.  
0.061 REF.  
2.300  
3.940  
2.600  
4.250  
0.091  
0.155  
0.102  
0.167  
1.500 T
Y
P
.  
3.000 T
Y
P
.  
0.060 T
Y
P
.  
0.118 T
Y
P
.  
0.900  
1.200  
0.035  
0.047  
REEL SPECIFICATION  
QTY  
P/N  
PKG  
A92  
SOT-89  
1000  

A92  
Semiconductor  
Compiance  
Attention  
■
Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you  
before using any MSKSEMI Semiconductor products described or contained herein in such applications.  
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described  
orcontained herein.  
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the  
performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.  
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to  
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause  
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents  
or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention  
circuitsfor safedesign, redundant design, and structural design.  
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described  
or contained herein are controlled under any of applicable local export control laws and regulations, such  
products must not be exported without obtaining the export license from theauthorities concerned in  
accordance with the above law.  
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  
without the prior written permission of MSKSEMI Semiconductor.  
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and  
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property  
rights or other rightsof third parties.  
■
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the  
MSKSEMI Semiconductor productthat you intend to use.