MSKSEMI-AO3406
| Part # | MSKSEMI-AO3406 |
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AO3406
Semiconductor
Compiance
Features
30V,3.5A , RDS(ON)=35mΩ@VGS=10V
Improved dv
/
d
t capability
Fast switching
D
Green Device Available
G
Applications
S
MB / VGA / Vcore
Load Switch
SOT-23-3L
Hand
–
H
eld Instrument
D
BVDSS
30V
RDSON
ID
G
3.5A
35m
Ω
S
Absolute Maximum Ratings
Tc= 2 5
℃
unless otherwise noted
Symbol
Rating
Units
Parameter
Drain-Source Voltage
30
V
V
A
A
A
V
DS
V
GS
Gate-Sou
r
ce Voltage
±
20
3.5
Drain Current – Continuous (T
A
=25
C
)
Drain Current – Continuous (T
A
=70
C
)
I
D
1.68
14
Drain Current – Pulsed
1
I
DM
P
D
Power Dissipation (T
A
=25
C
)
278
2.22
mW
Power Dissipation – Derate above 25
C
Storage Temperature Range
mW/
C
T
STG
T
J
C
C
-50 to 150
-50 to 150
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Typ.
Parameter
Thermal Resistance Junction to ambient
Max.
450
Unit
C
/ W
R
θJA
—
AO3406
Semiconductor
Compiance
Off Characteristics
Symbol
Typ.
Unit
Parameter
Drain-Source Breakdown Voltage
△
BV
DSS
/ △
T
J
BV
DSS
Temperature Coefficient
Conditions
V
GS
=0V , I
D
=250uA
Min.
Max.
30
V
BV
DSS
—
—
0.018
Reference to 25
C
, I
D
=1mA
V
DS
=30V , V
GS
=0V , T
J
=25
C
V
DS
=24V , V
GS
=0V , T
J
=125
C
V
GS
=
±
20V , V
DS
=0V
V/
C
uA
—
—
—
—
—
1
—
—
—
Drain-Source Leakage Current
Gate-Source Leakage Current
I
DSS
I
GSS
10
uA
nA
±
100
On Characteristics
35
45
50
70
V
GS
=10V , I
D
=3.5A
V
GS
=4.5V , I
D
=2.5A
m
m
—
R
DS(ON)
Static Drain-Source On-Resistance
—
1
Gate Threshold Voltage
1.5
-3.2
2.3
2.5
V
V
GS(th)
△
V
GS( th)
gfs
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=2A
V
GS(th)
Temperature Coefficient
mV/
C
S
—
—
—
—
Forward Transconductance
Dynamic and switching Characteristics
Total Gate Charge
2 , 3
3.1
0.1
1.7
2.2
6.9
15.2
4.5
245
40
Q
g
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Gate-Source Charge
2 , 3
nC
V
DS
=24V , V
GS
=10V , I
D
=1A
Q
gs
Gate-Drain Charge
2 , 3
Q
gd
Turn-On Delay Time
2 , 3
T
d(on)
Rise Time
2 , 3
V
DD
=24V , V
GS
=10V , R
G
=3.3
I
D
=1A
T
r
ns
pF
Turn-Off Delay Time
2 , 3
T
d(off)
Fall Time
2 , 3
T
f
Input Capacitance
C
iss
C
oss
C
rss
V
DS
=25V , V
GS
=0V , F=1MHz
Output Capacitance
Reverse Transfer Capacitance
78
Drain Source
Diode Characteristics and Maximum Ratings
Symbol
I
S
Typ.
Unit
A
Parameter
Conditions
Min.
—
Max.
3.5
Continuous Source Current
—
—
—
V
G
=V
D
=0V , Force Current
7.0
1.3
A
I
SM
Pulsed Source Current
Diode Forward Voltage
—
V
V
SD
V
GS
=0V , I
S
=1A , T
J
=25
C
—
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
2. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially
independent of operating temperature.
AO3406
Semiconductor
Compiance
T
J
, Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig. 1
Fig. 2
Continuous Drain Current vs.
T
J
Normalized RDSON vs.
T
J
T
J
, Junction Temperature (
℃
)
Qg , Gate Charge (
nC
)
Fig. 3
Fig. 4
Gate Charge Waveform
Normalized V
th
vs. T
J
V
DS
, Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
Fig. 5
Normalized
Transient
Impedance
Fig. 6
Maximum Safe Operation Area
AO3406
Semiconductor
Compiance
V
DS
90%
10%
V
GS
T
d(on)
T
d(off)
T
r
T
on
T
f
T
off
Fig. 8
Gate Charge Waveform
Fig. 7
Switching Time Waveform
AO3406
Semiconductor Compiance
PACKAGE MECHANICAL DATA
Di
m
e
nsions In Millimeters
Di
m
e
nsions In Inches
S
y
mbol
Min.
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Max.
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
Min.
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
Max.
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
A
A1
A2
b
c
D
E1
E
e
0.950(BSC)
0.037(BSC)
e1
L
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
ꢀ
REEL SPECIFICATION
QTY
P/N
PKG
AO3406
SOT-23
-3L
3000
AO3406
Semiconductor
Compiance
Attention
■
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
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■
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
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reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
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