MSKSEMI-AO3416

AO3416  

Semiconductor  

Compiance  

Features  

D

20V, 6.5A, RDS(ON)=16mΩ@VGS=4.5V  

Improved dv/dt capability  

Fast switching  

G

Green Device Available  

S

SOT-23-3L  

Applications  

Notebook  

D

Load Switch  

Hend-Held Instruments  

G

BVDSS  

20V  

RDSON  

ID  

6.5A  

16m

Ω

 

S

Absolute Maximum Ratings

Tc=25

℃

unless otherwise noted  

Symbol  

Rating  

Parameter  

Units  

Drain-Source Voltage  

20  

±

12  

V

V

V

DS  

V

GS  

Gate-Sou

r

ce Voltage  

Drain Current – Continuous (T

C

=25

C

)  

Drain Current – Continuous (T

C

=100

C

)  

6.5  

A

I

D  

4.2  

A

Drain Current – Pulsed

1  

26.8  

A

I

DM  

P

D  

Power Dissipation (T

C

=25

C

)  

1.56  

W

W/

C  

C

Power Dissipation – Derate above 25

C  

Storage Temperature Range  

0.012  

-55 to 150  

-55 to 150  

T

STG  

T

J  

Operating Junction Temperature Range  

C

Thermal Characteristics  

Symbol  

Typ.  

Parameter  

Thermal Resistance Junction to ambient  

Max.  

80  

Unit  

C

/ W  

R

θJA  

—  

AO3416  

Semiconductor  

Compiance  

Off Characteristics  

Symbol  

Typ.  

Parameter  

Conditions  

V

GS

=0V , I

D

=250uA  

Min.  

Max.  

Unit  

V

Drain-Source Breakdown Voltage  

BV

DSS

Temperature Coefficient  

20  

BV

DSS  

—  

—  

Reference to 25

C

, I

D

=1mA  

V

DS

=20V , V

GS

=0V , T

J

=25

C  

V

DS

=16V , V

GS

=0V , T

J

=125

C  

△

BV

DSS

/△

T

J  

0.02  

V/

C  

uA  

—  

—  

—  

—  

—  

1

—  

—  

—  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

I

DSS  

I

GSS  

10  

uA  

V

GS

=

±

10V , V

DS

=0V  

nA  

±

100  

On Characteristics  

V

GS

=4.5V , I

D

=4A  

V

GS

=2.5V , I

D

=3A  

16  

18  

0.6  

2

22  

24  

1.0  

—  

—  

R

DS(ON)  

Static Drain-Source On-Resistance  

m

Gate Threshold Voltage  

0.3  

V

mV/

C  

S

V

GS(th)  

△

V

GS(th)  

gfs  

V

GS

=V

DS

, I

D

=250uA  

V

DS

=10V , I

S

=4A  

V

GS(th)

Temperature Coefficient  

Forward Transconductance  

—  

—  

—  

—  

9.5  

Dynamic and switching Characteristics  

Total Gate Charge

2 , 3  

5.8  

0.6  

2

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

Gate-Source Charge

2 , 3  

Q

gs  

V

DS

=10V , V

GS

=4.5V , I

D

=4A  

nC  

nS  

pF  

Gate-Drain Charge

2 , 3  

Q

gd  

Turn-On Delay Time

2 , 3  

T

d(on)  

Rise Time

2 , 3  

Turn-Off Delay Time

2 , 3  

T

d(off)  

5.0  

14.4  

30.0  

9.2  

600  

70  

V

DD

=10V , V

GS

=4.5V , R

G

=25  

I

D

=1A  

T

r  

Fall Time

2 , 3  

T

f  

Input Capacitance  

C

iss  

Output Capacitance  

C

oss  

V

DS

=10V , V

GS

=0V , F=1MHz  

Reverse Transfer Capacitance  

C

rss  

45  

Drain-Source Diode Characteristics and Maximum Ratings  

Symbol  

I

S  

Typ.  

Parameter  

Continuous Source Current  

Pulsed Source Current  

Diode Forward Voltage  

Conditions  

Min.  

Max.  

6.5  

13  

Unit  

A

—  

—  

—  

—  

—  

—  

V

G

=V

D

=0V , Force Current  

A

I

SM  

V

GS

=0V , I

S

=1A , T

J

=25

C  

1.2  

V

V

SD  

Note :  

1 .  

Repetitive Rating : Pulsed width limited by maximum junction temperature.  

The data tested by pulsed , pulse width

 

300us , duty cycle

 

2%.  

Essentially independent of operating temperature.  

2.  

3.  

≦

≦

AO3416  

Semiconductor  

Compiance  

T

J

, Junction Temperature (

℃

)  

T

C

, Case Temperature (

℃

)  

Fig.1 Continuous

 

Drain Current vs. T

C  

Fig.2 Normalized

 

RDSON vs. T

J  

T

J

, Junction Temperature (

℃

)  

Qg , Gate Charge (

nC

)  

Fig.3 Normalized

 

V

th

vs. T

J  

Fig.4 Gate

 

Charge Waveform  

V

DS

, Drain to Source

V

o

ltage (V)  

Square Wave Pulse Duration (s)  

Fig.5 Normalized

 

Transient Impedance  

Fig.6 Maximum

 

Safe Operation Area  

AO3416  

Semiconductor  

Compiance  

Fig.7 Switching

 

Time Waveform  

Fig.8 Gate

 

Charge Waveform  

AO3416  

Semiconductor Compiance  

PACKAGE MECHANICAL DATA  

Di

m

e

nsions In Millimeters  

Di

m

e

nsions In Inches  

S

y

mbol  

Min.  

1.050  

0.000  

1.050  

0.300  

0.100  

2.820  

1.500  

2.650  

Max.  

1.250  

0.100  

1.150  

0.500  

0.200  

3.020  

1.700  

2.950  

Min.  

0.041  

0.000  

0.041  

0.012  

0.004  

0.111  

0.059  

0.104  

Max.  

0.049  

0.004  

0.045  

0.020  

0.008  

0.119  

0.067  

0.116  

A

A1  

A2  

b

c

D

E1  

E

e

0.950(BSC)  

0.037(BSC)  

e1  

L

1.800  

0.300  

0°  

2.000  

0.600  

8°  

0.071  

0.012  

0°  

0.079  

0.024  

8°  

ꢀ

REEL SPECIFICATION  

QTY  

P/N  

PKG  

AO3416  

3000  

SOT-23

-3L  

AO3416  

Semiconductor  

Compiance  

Attention  

■

Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications  

that can handle applications that require extremely high levels of reliability, such as life-support systems,  

aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious  

physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you  

before using any MSKSEMI Semiconductor products described or contained herein in such applications.  

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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  

other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described  

orcontained herein.  

■

Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the  

performance, characteristics, and functions of the described products in the independent state, and are not  

guarantees of the performance, characteristics, and functions of the described products as mounted in the  

customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent  

device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.  

■

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semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to  

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damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents  

or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention  

circuitsfor safedesign, redundant design, and structural design.  

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or contained herein are controlled under any of applicable local export control laws and regulations, such  

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without the prior written permission of MSKSEMI Semiconductor.  

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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  

guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and  

reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property  

rights or other rightsof third parties.  

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Any and all information described or contained herein are subject to change without notice due to  

product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the  

MSKSEMI Semiconductor productthat you intend to use.