MSKSEMI-AO4403-MS
| Part # | MSKSEMI-AO4403-MS |
Download  | MSKSEMI-AO4403-MS |
AO4403-MS
Semiconductor
Compiance
Features
SOP-8
●
V
DS (V)
=-30V
●
I =-6
A (V
GS
=-10V)
5 Drain
6 Drain
7 Drain
8 Drain
1 Source
2 Source
3 Source
4 Gate
D
●
R
DS(ON)
＜
48m
Ω
(V
GS
=-10V)
●
R
DS(ON)
＜
57m
Ω
(V
GS
=-4.5V)
●
R
DS(ON)
＜
80m
Ω
(V
GS
=-2.5V)
D
G
S
Absolute Maximum Ratings Ta = 25
℃
Parameter
Drain-Source Voltage
Symbol
Rating
Unit
V
V
DS
GS
-30
±
12
-6
Gate-Source Voltage
V
T
T
A
=25°C
=70°C
Continuous Drain Current
I
D
A
-5
A
Pulsed Drain Current
Avalanche Current
Avalanche energy
I
DM
-30
18
I
AS
,I
AR
L=0.1mH
E
AS
,E
AR
16
mJ
W
T
T
A
=25°C
=70°C
3.1
Power Dissipation
P
D
A
2
40
t
≤
10s
Steady-State
Thermal Resistance.Junction- to-Ambient
R
thJA
thJL
75
℃
/W
Thermal Resistance.Junction- to-Lead
Junction Temperature
R
24
T
J
150
-55 to 150
℃
Junction Storage Temperature Range
T
stg
AO4403-MS
Semiconductor
Compiance
Electrical Characteristics Ta = 25
℃
Parameter
Symbol
Test Conditions
D
=-250
μ
A, V
GS
=0V
Min
-30
Typ
Max
Unit
Drain-Source Breakdown Voltage
V
DSS
V
I
V
V
V
V
V
V
V
V
V
V
DS
=-30V, V
GS
=0V
DS
=-30V, V
GS
=0V, T
DS
=0V, V
GS
=
±
12V
-1
-5
Zero Gate Voltage Drain Current
I
DSS
GSS
uA
J
=55
℃
Gate-Body leakage current
Gate Threshold Voltage
I
nA
V
±
100
-1.3
48
V
GS(th)
-0.5
-30
4
DS
=V
GS
I
D
=-250
μ
A
GS
=-10V, I
GS
=-10V, I
D
=-6A
=-6A
72
D
T
J
=125
℃
Static Drain-Source On-Resistance
R
DS(O
n
)
m
Ω
GS
=-4.5V, I
GS
=-2.5V, I
D
=-4A
57
D
=-2A
80
On state drain current
I
D(ON)
FS
iss
oss
GS
=-4.5V, V
DS
=-5V
DS
=-5V, I
=-6A
A
S
Forward Transconductance
Input Capacitance
g
D
19
645
80
C
780
12
V
V
V
GS
=0V, V
DS
=-15V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
pF
Output Capacitance
C
Reverse Transfer Capacitance
Gate resistance
C
rss
55
R
g
Ω
Total Gate Charge
Q
g
7
GS
=-4.5V, V
DS
=-15V, I
D
=-6A
nC
Gate Source Charge
Q
gs
gd
1.5
2.5
6.5
3.5
41
9
Gate Drain Charge
Q
Turn-On DelayTime
t
d(on)
Turn-On Rise Time
t
r
V
R
GS
=-10V, V
DS
=-15V, R
L
=2.5
Ω
,
GEN
=6
Ω
ns
Turn-Off DelayTime
t
d(off)
Turn-Off Fall Time
t
f
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
t
rr
rr
11
3.5
I
I
F
=-6A, d
I
/d
t
=100A/us
Q
nC
A
I
S
-3.5
-1
V
SD
S
=-1A,V
GS
=0V
V
Note : The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
AO4403-MS
Semiconductor
Compiance
Typical Characterisitics
30
20
15
10
5
-10V
V
DS
=-5V
25
-4.5V
-3V
20
15
10
5
125
°
C
-2.5V
25
°
C
V
GS
=-2V
4
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
5
-V
GS
(Volts)
-V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
90
70
50
30
10
1.8
1.6
1.4
1.2
1
V
GS
=-4.5V
I
D
=-4A
V
GS
=-10V
V
GS
=-2.5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-6A
V
GS
=-2.5V
I
D
=-2A
0.8
0
2
4
6
8
10
0
25
50
75
Temperature (
°
C
)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
100
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=-6A
125
°
C
125
°
C
60
25
°
C
40
25
°
C
20
0.0
0.2
0.4
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
AO4403-MS
Semiconductor
Compiance
Typical Characterisitics
1200
1000
800
600
400
200
0
5
V
DS
=-15V
I
D
=-6A
4
C
iss
3
2
1
0
C
oss
C
rss
0
2
4
6
8
10
0
5
10
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
10000
1000
100
10
T
J(Max)
=150
°
C
T
A
=25
°
C
10
µ
s
100
µ
s
R
DS(ON)
limited
1ms
10ms
1s
T
J(Max)
=150
°
C
T
A
=25
°
C
0.1
10s
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.1
1
10
100
-V
DS
(Volts)
.
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
1
R
θ
JA
=75
°
C
/W
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
100
1000
AO4403-MS
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Sy
m
bo l
M
i
n
1.350
0.100
1.
3
50
0.330
0.170
4.800
Max
1.
7
50
0.250
1.5
5
0
0.510
0.250
5.000
M
i
n
0.053
0.004
0.0
53
0.013
0.007
0.189
Max
A
A1
A2
b
0.069
0.010
0.0
61
0.020
0.010
0.197
c
D
e
1.270（BSC）
0.050（BSC）
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
REEL SPECIFICATION
P/N
PKG
QTY
AO4403-MS
3000
SOP-8
AO4403-MS
Semiconductor
Compiance
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you
before using any MSKSEMI Semiconductor products described or contained herein in such applications.
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
circuitsfor safedesign, redundant design, and structural design.
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from theauthorities concerned in
accordance with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written permission of MSKSEMI Semiconductor.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
MSKSEMI Semiconductor productthat you intend to use.
