MSKSEMI-AO4406-MS
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AO4406-MS
Semiconductor
Compiance
SOP-8
Features
5 Drain
6 Drain
7 Drain
8 Drain
1 Source
2 Source
3 Source
4 Gate
●
V
DS (V)
= 30V
●
I
D
= 12 A (V
GS
= 10V)
●
R
DS(ON)
＜
12.0m
Ω
(V
GS
= 10V)
●
R
DS(ON)
＜
15.5m
Ω
(V
GS
= 4.5V)
D
G
S
Absolute Maximum Ratings Ta = 25
℃
Parameter
Drain-Source Voltage
Symbol
Rating
30
Unit
V
V
DS
GS
Gate-Source Voltage
V
±
20
12
TA=25
℃
TA=70
℃
Continuous Drain Current
I
D
10
A
Pulsed Drain Current
Avalanche Current
Avalanche energy
I
DM
AS
AS
100
22
I
L=0.1mH
TA=25
℃
TA=70
℃
t
≤
10s
E
24
mJ
W
3.1
Power Dissipation
P
D
2
40
Thermal Resistance.Junction- to-Ambient
R
thJA
thJL
Steady-State
75
℃
/W
Thermal Resistance.Junction- to-Lead
Junction Temperature
R
24
T
J
150
-55 to 150
℃
Storage Temperature Range
T
stg
AO4406-MS
Semiconductor
Compiance
Electrical Characteristics Ta = 25
℃
Parameter
Symbol
Test Conditions
I
D
=250 uA,
V
GS
=0V
Min
30
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
V
DSS
V
V
V
V
V
V
V
V
V
DS
=30V, V
GS
=0V
DS
=30V, V
GS
=0V, T
DS
=0V, V
GS
=
±
20V
1
5
Zero Gate Voltage Drain Current
I
DSS
uA
J
=55
℃
Gate-Body Leakage Current
Gate Threshold Voltage
I
GSS
nA
V
±
100
2.5
12
V
GS(th)
DS
=V
GS
, I
D
=250uA
1.5
GS
=10V, I
GS
=10V, I
D
=12A
Static Drain-Source On-Resistance
R
DS(O
n
)
17
D
=12A
T
J
=125
℃
m
Ω
GS
=4.5V, I
GS
=10V, V
DS
=5V
DS
=5V, I =12A
D
=10A
15.5
On State Drain Current
Forward Transconductance
Input Capacitance
I
D(ON)
FS
iss
oss
100
A
S
g
D
45
C
610
88
40
0.8
11
5
910
160
100
2.4
17
V
V
GS
=0V, V
DS
=15V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
pF
Output Capacitance
C
Reverse Transfer Capacitance
Gate Resistance
C
rss
R
g
Ω
Total Gate Charge
(10V)
Total Gate Charge
(4.5V)
Gate Source Charge
Q
g
8
V
V
GS
=10V, V
DS
=15V, I
D
=12A
nC
Q
gs
gd
1.9
1.8
2.9
4.2
Gate Drain Charge
Q
Turn-On DelayTime
t
d(on)
4.4
9
Turn-On Rise Time
t
r
GS
=10V, V
DS
=15V, R
L
=1.25
Ω
,
R
GEN
=3
Ω
ns
Turn-Off DelayTime
t
d(off)
17
6
Turn-Off Fall Time
t
f
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
t
rr
rr
5.6
6.4
8
9.6
4
I
I
F
= 12A,
d
I
/d
t
= 500A/us
Q
nC
A
I
S
V
SD
S
=1A,V
GS
=0V
1
V
Note : The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
AO4406-MS
Semiconductor
Compiance
Typical Characterisitics
100
30
25
20
15
10
5
6V
10V
V
DS
=5V
5V
4.5V
4V
80
60
40
20
0
7V
125
°
C
3.5V
25
°
C
V
GS
=3V
0
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
18
16
14
12
10
8
1.8
V
GS
=10V
I
D
=12A
1.6
1.4
1.2
1
V
GS
=4.5V
V
GS
=4.5V
I
D
=10A
V
GS
=10V
0.8
6
0
25
50
75
100
125
150
175
0
5
10
15
I
D
(A)
20
25
30
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
30
25
20
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=12A
125
°
C
125
°
C
25
°
C
25
°
C
0
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
AO4406-MS
Semiconductor
Compiance
Typical Characterisitics
10
1200
1000
800
600
400
200
0
V
DS
=15V
I
D
=12A
8
6
4
2
0
C
iss
C
oss
C
rss
0
3
6
9
12
15
0
5
10
15
20
25
30
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
1
1000.0
100.0
10.0
1.0
T
A
=25
°
C
T
A
=100
°
C
10
µ
s
T
A
=150
°
C
R
DS(ON)
limited
100
µ
s
1ms
T
A
=125
°
C
10ms
100ms
10s
T
J(Max)
=150
°
C
T
A
=25
°
C
0.1
DC
0.0
0.01
0.1
1
10
100
1
10
100
1000
V
DS
(Volts)
Time in avalanche, t
A
(
µ
s)
.
Figure 9: Single Pulse Avalanche capability (Note C)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
1000
100
10
T
A
=25
°
C
1
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
0.1
1
10
100
1000
AO4406-MS
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Sy
m
bo l
M
i
n
1.350
0.100
1.
3
50
0.330
0.170
4.800
Max
1.
7
50
0.250
1.5
5
0
0.510
0.250
5.000
M
i
n
0.053
0.004
0.0
53
0.013
0.007
0.189
Max
A
A1
A2
b
0.069
0.010
0.0
61
0.020
0.010
0.197
c
D
e
1.270（BSC）
0.050（BSC）
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
REEL SPECIFICATION
P/N
PKG
QTY
AO4406-MS
3000
SOP-8
AO4406-MS
Semiconductor
Compiance
Attention
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
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performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
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