MSKSEMI-AO4407A
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AO4407A
Product specification
AO4407A
General Features
-30V,- 12A, RDS(ON) =9 .0mΩ @VGS = – 10V
Fast switching
Application
MB / VGA / Vcore
POL Applications
Load Switch
Green Device Available
LED Application
Suit for -4 . 5V Gate Drive Applications
Reference News
PACKAGE OUTLINE
Pin Configuration
Marking
MSKSEMI
4407
MS07P
SOP-8
Copyright© Msksemi Incorporated
AO4407A
Absolute Maximum Ratings
(
T
A
=
25
℃
unless otherwise noted)
Symbol
Rating
Parameter
Units
Drain- Source
Voltage
V
DS
V
GS
V
V
A
A
A
–
30
±
20
Gate- Sou
r
ce Voltage
Drain Current – Continuous (T
A
=25
℃
)
Drain Current – Continuous (T
A
=70
℃
)
Drain Current – Pulsed
1
– 12
I
D
-8
I
DM
-40
Single Pulse Avalanche Energy
2
Single Pulse Avalanche Current
2
Power Dissipation (T
A
=25
℃
)
m
J
EAS
IAS
125
50
A
W
2
P
D
Power Dissipation – Derate above 2
5
℃
0.016
-55 to 150
-55 to 150
W/
℃
℃
Storage Temperature Range
T
STG
T
J
Operating Junction Temperature Range
℃
Thermal
Symbol
Characteristics
Unit
Typ.
Parameter
Max.
Thermal Resistance Junction to ambient
62.5
℃
/W
—
R
θJA
Electrical Characteristics ( TJ=2 5
Off Characteristics
, unless
otherwise noted)
Symbol
Typ.
Parameter
Max. Unit
Conditions
Min.
Drain- Source
Breakdown Voltage
Drain- Source
Leakage Current
BV
DSS
V
—
—
—
—
—
–
1
–
30
—
V
GS
=0V , I
D
=
–
250uA
u
A
V
DS
=
–
30V , V
GS
=0V , T
J
=25
℃
I
DSS
I
GSS
u
A
—
–
10
±
100
V
DS
=
–
24V , V
GS
=0V , T
J
=125
℃
V
GS
=
±
20V , V
DS
=0V
Gate- Source
Leakage Current
n
A
—
Copyright© Msksemi Incorporated
AO4407A
On
Characteristics
m
m
9
13
20
—
—
V
GS
=
–
10V , I
D
=
–
10A
V
GS
=
–
4.5V , I
D
=
–
8A
V
GS
=
V
DS
, I
D
=
–
250uA
V
DS
=
–
10V , I
D
=
–
3A
Static Drain-
Source On-
Resistance
R
DS(ON)
14
Gate Threshold Voltage
V
V
GS
(
t
h)
–
1.6
11
–
2.5
—
–
1.0
—
gfs
Forward Transconductance
S
Dynamic and switching Characteristics
4
Total Gate Charge
3 ,
34
5.2
7.9
20
Q
g
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Gate
–
S
ource Charge
3
,
4
n
C
Q
gs
Q
gd
V
DS
=
–
15V , V
GS
=
–
10V , I
D
=
–
5A
,
4
Gate-Drain Charge
3
Turn-On Delay Time
3
Rise Time
3 , 4
,
4
T
d(on)
15
T
r
V
DD
=
–
15V , V
GS
=
–
10V , R
G
=6
I
D
=
–
5A
ns
Turn-Off Delay Time
3
Fall Time
3 , 4
, 4
40
T
d
(
o
ff)
30
T
f
Input Capacitance
2020
305
245
C
iss
C
oss
C
rss
p
Output Capacitance
F
V
DS
=
–
15V , V
GS
=0V , F=1MHz
Reverse Transfer Capacitance
Drain- Source
Diode Characteristics and Maximum Ratings
Unit
Symbol
Typ.
—
Parameter
Continuous Source Current
Pulsed Source Current
Conditions
Min.
—
Max.
–
1
2
I
S
I
SM
A
A
V
V
G
=
V
D
=0V , Force Current
-24
—
—
Diode Forward Voltage
V
SD
—
—
–
1.2
V
GS
=0V , I
S
=
–
1A , T
J
=25
℃
Note :
. Repetitive
Rating
1
:
Pulsed width limited by maximum
junction temperature
.
2 .
The data tested by pulsed ,
pulse width
≦
30 0 us ,
duty cycle
≦
2 %
.
3
.
Essentially independent of operating temperature .
Copyright© Msksemi Incorporated
AO4407A
VGS=-4. 5V
VGS
=
-3 V
VGS=-2. 7V
VGS=-2.5V
-V
DS
,Drain to Source Voltage (
V
)
Gate Charge Waveform
Fig.
5
Continuous Drain Current vs.
T
C
Fig. 6
Capacitance Characteristics
Copyright© Msksemi Incorporated
AO4407A
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Mi n
1.350
0.100
1.350
0.330
0.170
4.800
Min
0.053
0.004
0.053
0.013
0.007
0.189
Max
Max
A
1.750
0.069
A1
0.250
1.550
0.510
0.250
5.000
0.010
0.061
0.020
0.010
0.197
A2
b
c
D
e
1 . 2 70
( BSC)
0 .0 5 0 ( BSC)
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
Suggested Pad Layout
REEL SPECIFICATION
P/ N
QTY
PKG
AO4407A
SOP-8
3000
Copyright© Msksemi Incorporated
AO4407A
Attention
■
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MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability,
such as life
–
s
upport
systems, aircraft
‘
s
c
ontrol systems, or
other applications whose failure can be reasonably expected to result in serious physical and/
or material damage.
Consult with
your MSKSEMI Semiconductor representative
or contained herein in such
applications.
nearest
you before using any MSKSEMI Semiconductor products described
■
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at values that
exceed, even
momentarily, rated
values (
such as maximum ratings,
operating condition ranges,
or other parameters)
listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
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performance, characteristics, and
functions of the described products in the independent state,
and are not guarantees of the
performance, characteristics, and
functions of the described products as mounted in the customer’
s products or equipment.
To
verify symptoms and states that cannot be evaluated in an independent device,
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sproducts orequipment.
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(
i
ncluding circuit diagrams and circuit parameters)
herein is for example only ; it is not guaranteed for volume
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Semiconductor believes information herein is accurate and
reliable, but
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implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
Any and all information described or contained herein are subject to change without notice due to
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improvement, etc. Whendesigning
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the “
Delivery Specification”
for the MSKSEMI
Semiconductor productthat you intend to use .
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