MSKSEMI-AO4409-MS
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AO4409-MS
Semiconductor
Compiance
■
Features
●
V
DS (V)
=-30V
●
I =-15
A (V
GS
=-10V)
SOP-8
D
5 Drain
6 Drain
7 Drain
8 Drain
1 Source
2 Source
3 Source
4 Gate
●
R
DS(ON)
＜
7.5m
Ω
(V
GS
=-10V)
●
R
DS(ON)
＜
12m
Ω
(V
GS
=-4.5V)
D
G
S
Absolute Maximum Ratings Ta = 25
℃
Parameter
Drain-Source Voltage
Symbol
Rating
-30
Unit
V
V
DS
GS
Gate-Source Voltage
V
±
20
-15
T
T
A
=25°C
=70°C
Continuous Drain Current
I
D
A
-12.8
-80
A
Pulsed Drain Current
Avalanche Current
Avalanche energy
I
DM
I
AS
,I
AR
30
L=0.1mH
E
AS
,E
AR
135
3.1
mJ
W
T
T
A
=25°C
=70°C
Power Dissipation
P
D
A
2
40
t
≤
10s
Steady-State
Thermal Resistance.Junction- to-Ambient
R
thJA
thJL
75
℃
/W
Thermal Resistance.Junction- to-Lead
Junction Temperature
R
24
T
J
150
-55 to 150
℃
Junction Storage Temperature Range
T
stg
AO4409-MS
Semiconductor
Compiance
Electrical Characteristics Ta = 25
℃
Parameter
Symbol
Test Conditions
D
=-250
μ
A, V
GS
=0V
Min
-30
Typ
Max
Unit
Drain-Source Breakdown Voltage
V
DSS
V
I
V
V
V
V
V
V
V
V
V
DS
=-30V, V
GS
=0V
DS
=-30V, V
GS
=0V, T
DS
=0V, V
GS
=
±
20V
-5
-25
Zero Gate Voltage Drain Current
I
DSS
GSS
uA
J
=55
℃
Gate-Body leakage current
Gate Threshold Voltage
I
nA
V
±
100
-2.7
7.5
V
GS(th)
-1.4
DS
=V
GS
I
D
=-250
μ
A
GS
=-10V, I
GS
=-10V, I
D
=-15A
=-15A
Static Drain-Source On-Resistance
R
DS(O
n
)
11.5
12
D
T
J
=125
℃
m
Ω
GS
=-4.5V, I
GS
=-10V, V
DS
=-5V
DS
=-5V, I
=-15A
D
=-10A
On state drain current
I
D(ON)
FS
iss
oss
-80
35
A
S
Forward Transconductance
Input Capacitance
g
D
50
C
5270 6400
945
V
V
GS
=0V, V
DS
=-15V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
pF
Output Capacitance
C
Reverse Transfer Capacitance
Gate resistance
C
rss
745
R
g
2
3
Ω
Total Gate Charge
(10V)
Total Gate Charge
(4.5V)
Gate Source Charge
100
51.5
14.5
23
120
Q
g
V
V
GS
=-10V, V
DS
=-15V, I
D
=-15A
nC
Q
gs
gd
Gate Drain Charge
Q
Turn-On DelayTime
t
d(on)
14
Turn-On Rise Time
t
r
16.5
76.5
37.5
36.7
28
GS
=-10V, V
DS
=-15V, R
GEN
=3
Ω
L
=1
Ω
,
R
ns
Turn-Off DelayTime
t
d(off)
Turn-Off Fall Time
t
f
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
t
rr
rr
45
I
I
F
=-15A, d
I
/d
t
=100A/us
Q
nC
A
I
S
-5
-1
V
SD
S
=-1A,V
GS
=0V
V
Note : The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
AO4409-MS
Semiconductor
Compiance
Typical Characterisitics
60
60
50
40
30
20
10
0
V
DS
=-5V
-4V
50
40
30
20
10
0
-4.5V
-6V
-10V
-3.5V
125
°
C
25
°
C
V
GS
=-3V
4
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
5
-V
GS
(Volts)
-V
DS
(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
12
1.6
1.4
1.2
1
I
D
=-15A
V
GS
=-4.5V
10
8
V
GS
=-10V
6
V
GS
=-10V
V
GS
=-4.5V
4
2
0.8
0
5
10
15
20
25
0
25
50
75
100
125
150
175
-I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
20
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=-15A
125
°
C
125
°
C
25
°
C
25
°
C
0
0.0
0.2
0.4
0.6
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
AO4409-MS
Semiconductor
Compiance
Typical Characterisitics
8000
7000
6000
5000
4000
3000
2000
1000
0
10
8
V
DS
=-15V
I
D
=-15A
C
iss
6
4
C
oss
2
C
rss
0
0
20
40
60
Q
g
(nC)
80
100
120
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
10
1000.0
100.0
10.0
1.0
T
A
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
T
J(Max)
=150
°
C
T
A
=25
°
C
10s
DC
0.1
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
.
Safe
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=75
°
C
/W
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
100
1000
AO4409-MS
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Sy
m
bo l
M
i
n
1.350
0.100
1.
3
50
0.330
0.170
4.800
Max
1.
7
50
0.250
1.5
5
0
0.510
0.250
5.000
M
i
n
0.053
0.004
0.0
53
0.013
0.007
0.189
Max
A
A1
A2
b
0.069
0.010
0.0
61
0.020
0.010
0.197
c
D
e
1.270（BSC）
0.050（BSC）
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
REEL SPECIFICATION
P/N
PKG
QTY
AO4409-MS
3000
SOP-8
AO4409-MS
Semiconductor
Compiance
Attention
■
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
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■
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■
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■
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guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
■
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product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
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