MSKSEMI-AO4430
| Part # | MSKSEMI-AO4430 |
Download  | MSKSEMI-AO4430 |
AO4430
Product specification
AO4430
General Features
Application
30 V, 16A, RDS(ON)=4.8mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
Notebook
Load Switch
LED applications
Hand-Held Device
Green Device Available
Reference News
PACKAGE OUTLINE
Pin Configuration
Marking
MSKSEMI
4430
MS30N
SOP-8
Copyright© Msksemi Incorporated
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Symbol
Rating
Parameter
Units
Drain-Source Voltage
V
DS
V
GS
30
V
V
Gate-Sou
r
ce Voltage
±
20
Drain Current – Continuous (T
C
=25
C
)
Drain Current – Continuous (T
C
=100
C
)
16
9.5
60
4
A
I
D
A
Drain Current – Pulsed
1
I
DM
A
Power Dissipation (T
C
=25
C
)
W
W/
C
C
P
D
Power Dissipation – Derate above 25
C
Storage
T
e
mperature Range
0.032
-55 to 150
T
STG
T
J
Operating Junction Temperature Range
-55 to 150
C
Thermal
Symbol
Characteristics
Parameter
Typ.
Max.
Unit
—
—
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
C
/ W
C
/ W
R
θJA
R
θJC
85
31
Electrical Characteristics
(
T
=25
℃
, unless otherwise noted)
J
Off
Characteristics
Symbol
Typ.
Parameter
Conditions
Min.
Max. Unit
—
—
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
BV
DSS
V
GS
=0V , I
D
=250uA
30
—
V
Reference to 25
C
, I
D
=1mA
△
BV
DSS
/△
T
J
—
V/
C
uA
0.04
—
—
—
—
V
DS
=30V , V
GS
=0V , T
J
=25
C
V
DS
=24V , V
GS
=0V , T
J
=125
C
1
Drain-Source Leakage Current
Gate-Source Leakage Current
I
DSS
—
—
10
uA
V
GS
=
±
20V , V
DS
=0V
±
100
I
GSS
nA
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On Characteristics
—
—
m
V
GS
=10V , I
D
=6A
V
GS
=4.5V , I
D
=3A
4.8
7.5
1.5
8
Static Drain-Source On-Resistance
R
DS(ON)
m
14
2.5
Gate Threshold Voltage
V
GS(th)
1.2
—
V
V
GS( th)
Temperature Coefficient
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=10A
—
—
△
V
GS(th)
mV/
C
-4
gfs
Forward Transconductance
—
18
S
Dynamic and switching Characteristics
Total Gate Charge
2 , 3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Q
g
7.5
1.3
Gate-Source Charge
2 , 3
V
DS
=15V , V
GS
=4.5V , I
D
=10A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
4.5
4.8
Rise Time
2 , 3
12.5
27.6
8.2
V
DD
=15V , V
GS
=10V , R
G
=3.3
I
D
=15A
Turn-Off Delay Time
2 , 3
T
d(off)
T
f
Fall Time
2 , 3
Input Capacitance
C
iss
C
oss
C
rss
R
g
750
150
1
1
0
2.7
Output Capacitance
V
DS
=25V , V
GS
=0V , F=1MHz
V
GS
=0V, V
DS
=0V, F=1MHz
pF
Reverse Transfer Capacitance
Gate resistance
Drain- Source
Diode Characteristics and Maximum Ratings
Symbol
Typ.
Parameter
Continuous Source Current
Pulsed Source Current
Conditions
Min.
Max. Unit
—
—
—
—
I
S
16
32
1.2
A
A
V
V
G
=V
D
=0V , Force Current
—
—
I
SM
V
SD
Diode Forward Voltage
V
GS
=0V , I
S
=1A , T
J
=25
C
Note :
Repetitive Rating :
Pulsed width limited by maximum junction temperature.
The data tested by pulsed , pulse width
3
00
u
s
, duty cycle
2
%.
Essentially independent of operating temperature.
1.
2.
3.
≦
≦
Copyright© Msksemi Incorporated
T
J
, Junction Temperature (
℃
)
T
C
, Case Temperature (
℃
)
Fig. 2
Normalized RDSON vs.
T
J
Fig. 1
Continuous Drain Current vs.
T
C
T
J
, Junction Temperature (
℃
)
Qg , Gate Charge (
nC
)
Fig. 3
Normalized V
th
vs. T
J
Fig. 4
Gate Charge Waveform
Square Wave Pulse Duration (s)
V
DS
, Drain to Source
V
o
ltage (V)
Fig. 5 Normalized
Transient Impedance
Fig. 6
Maximum Safe Operation Area
Copyright© Msksemi Incorporated
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
1.350
1.750
0.053
0.069
A1
0.100
1.350
0.330
0.170
4.800
0.250
1.550
0.510
0.250
5.000
0.004
0.053
0.013
0.007
0.189
0.010
0.061
0.020
0.010
0.197
A2
b
c
D
e
1. 2 70 (
B
SC)
0
.
0 5 0 (
B
SC)
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
Suggested Pad Layout
P/N
QTY
PKG
AO4430
SOP–8
3000
Copyright© Msksemi Incorporated
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performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
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o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
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