MSKSEMI-AO4435-MS
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AO4435-MS
Semiconductor
Compiance
Description
uses advanced trench technology
The
AO4435-MS
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5
V
. This
device is suitable for use as a
D
D
D
G
D
S
S
S
Battery protection or in other Switching application.
General Features
SOP-8
V
DS
= 30V
I
D
= 9A
D
R
DS(ON)
< 20mΩ @ V
GS
=10V
Application
G
Battery protection
S
P-Channel MOSFET
Load switch
Uninterruptible power supply
Absolute Maximum Ratings
(Tc=25
℃
unless otherwise noted )
Symbol Parameter
Rating
– 30
+ 20
-9
Units
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
A
VGS
Drain Current
3
, V
GS
@ 10V
I
D
@T
A
=25
℃
Drain Current
3
, V
GS
@ 10V
-7.3
A
I
D
@T
A
=70
℃
IDM
Pulsed Drain Current
1
T
o
tal Power Dissipation
-50
2.5
A
W
P
D
@T
A
=25
℃
Linear Derating Factor
0.02
W/
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
50
℃
℃
TSTG
T
J
Operating Junction
T
e
mperature Range
Maximum Thermal Resistance, Junction-ambient
3
Rthj-a
℃
/W
AO4435-MS
Semiconductor
Compiance
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
Parameter
T
e
st Conditions
V
GS
=0
V
,
I
D
=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-30
–
–
–
–
V
mΩ
mΩ
V
20
V
GS
=-10
V
,
I
D
=-7A
V
GS
=-4.5
V
,
I
D
=-5A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10
V
,
I
D
=-7A
V
DS
=-24
V
,
V
GS
=0V
V
GS
=+20
V
,
V
DS
=0V
I
D
=-7A
Static Drain-Source On-Resistance
2
–
–
32
RDS(ON)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
T
o
tal Gate Charge
-1
–
–
-3
VGS(th)
g
fs
16
–
–
S
IDSS
IGSS
Q
g
–
-30
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
–
–
+100
–
18
3
29
–
V
DS
=-24V
Q
gs
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
–
V
GS
=-4.5V
Q
gd
–
10
8
–
td(on)
t
r
V
DS
=-15V
I
D
=-1A
–
–
Rise Time
–
6.6
44
34
–
R
G
=3.3
Ω
V
GS
=-10V
td(off)
t
f
Turn-off Delay Time
–
–
Fall Time
–
–
C
iss
Input Capacitance
V
GS
=0V
V
DS
=-
25V
.
–
1175 1690
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
–
195
190
–
–
f=1.0MHz
–
–
V
SD
I
S
=-2.1A, V
GS
=0V
–
-1.2
trr
I
S
=-7A, V
GS
=0
V
,
d
I/dt=100A/µs
–
28
18
–
–
ns
nC
Q
rr
–
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 125
℃
/W when mounted on Min. cop
AO4435-MS
Semiconductor
Compiance
50
40
30
20
10
0
50
40
30
20
10
0
T
A
=25
o
C
T
A
=150
o
C
-10V
-7.0V
-5.0V
-4.5V
-10V
-7.0V
-5.0V
-4.5V
V
G
= -3.0V
V
G
= -3.0V
0
1
2
3
4
0
2
4
6
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
32
28
24
20
16
12
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= -5A
I
D
= -7A
T
A
=25
o
C
V
G
= -10V
Ω
.
-50
0
50
100
150
2
4
6
8
10
T
j
, Junction Temperature (
o
C)
-V
GS
, Gate-to-Source Voltage (V)
Fig 3. On-Resistance
v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.8
1.6
1.4
1.2
1
10
8
6
4
2
0
T
j
=25
o
C
T
j
=150
o
C
0.8
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
SD
, Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AO4435-MS
Semiconductor
Compiance
f=1.0MHz
12
10
8
10000
I
D
= -7A
DS
= -24V
V
C
iss
6
1000
4
2
C
oss
C
rss
0
100
0
10
20
30
40
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100.00
Duty factor=0.5
10.00
1.00
0.10
0.01
0.2
0.1
100us
1ms
0.1
10ms
.
0.05
P
DM
100ms
1s
t
T
0.02
T
A
=25
o
C
0.01
Duty factor = t/T
DC
Peak T
j
= P
DM
x R
thja
+ T
a
Single Pulse
R
thja
= 125
℃
/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
30
20
10
0
T
j
=25
o
C
T
j
=150
o
C
V
G
V
DS
= -5V
Q
G
-4.5V
Q
GS
Q
GD
Charge
Q
0
1
2
3
4
5
6
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
AO4435-MS
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Sy
m
bo l
M
i
n
1.350
0.100
1.
3
50
0.330
0.170
4.800
Max
1.
7
50
0.250
1.5
5
0
0.510
0.250
5.000
M
i
n
0.053
0.004
0.0
53
0.013
0.007
0.189
Max
A
A1
A2
b
0.069
0.010
0.0
61
0.020
0.010
0.197
c
D
e
1.270（BSC）
0.050（BSC）
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
REEL SPECIFICATION
P/N
PKG
QTY
AO4435-MS
3000
SOP-8
AO4435-MS
Semiconductor
Compiance
Attention
■
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious
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before using any MSKSEMI Semiconductor products described or contained herein in such applications.
■
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■
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reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
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