MSKSEMI-AO4480-MS
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AO4480-MS
Semiconductor
Compiance
Features
●
V
DS (V)
= 40V
SOP-8
●
I
D
= 14 A (V
GS
= 10V)
5 Drain
6 Drain
7 Drain
8 Drain
1 Source
2 Source
3 Source
4 Gate
●
R
DS(ON)
＜
13.0m
Ω
(V
GS
= 10V)
●
R
DS(ON)
＜
16.5m
Ω
(V
GS
= 4.5V)
D
G
S
Absolute Maximum Ratings Ta = 25
℃
Parameter
Drain-Source Voltage
Symbol
Rating
40
Unit
V
V
DS
GS
Gate-Source Voltage
V
±
20
14
T
T
A
=25
℃
=70
℃
Continuous Drain Current
I
D
10
A
A
Pulsed Drain Current
Avalanche Current
I
DM
AR
AR
70
I
30
Repetitive Avalanche Energy
L=0.3mH
E
135
3.1
mJ
W
T
T
A
=25
℃
=70
℃
Power Dissipation
P
D
2
A
40
t
≤
10s
Steady-State
Thermal Resistance.Junction- to-Ambient
R
thJA
thJL
75
℃
/W
Thermal Resistance.Junction- to-Lead
Junction Temperature
R
24
T
J
150
-55 to 150
℃
Storage Temperature Range
T
stg
AO4480-MS
Semiconductor
Compiance
Electrical Characteristics Ta = 25
℃
Parameter
Symbol
Test Conditions
D
=250
μ
A, V
GS
=0V
Min
Typ
Max
Unit
V
40
Drain-Source Breakdown Voltage
V
DSS
I
V
V
V
V
V
V
V
V
V
DS
=32V, V
GS
=0V
DS
=32V, V
GS
=0V, T
DS
=0V, V
GS
=
±
20V
1
5
Zero Gate Voltage Drain Current
I
DSS
GSS
uA
J
=55
℃
Gate-Body Leakage Current
Gate Threshold Voltage
I
uA
V
±
100
3
V
GS(th)
DS
=V
GS
, I
D
=250uA
1
GS
=10V, I
GS
=10V, I
D
=14A
11.5
Static Drain-Source On-Resistance
R
DS(O
n
)
13
D
=14A
T
J
=125
℃
m
Ω
GS
=4.5V, I
GS
=10V, V
DS
=5V
DS
=5V, I =5A
D
=5A
16.5
On State Drain Current
Forward Transconductance
Input Capacitance
I
D(ON)
FS
iss
oss
70
50
A
S
g
D
C
1600 1920
V
V
GS
=0V, V
DS
=20V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
pF
Output Capacitance
C
320
100
3.4
22
Reverse Transfer Capacitance
Gate Resistance
C
rss
R
g
Ω
Total Gate Charge
(10V)
Total Gate Charge
(4.5V)
Gate Source Charge
Q
g
10.5
4.2
4.8
3.5
6
V
V
GS
=10V, V
DS
=20V, I
D
=14A
nC
Q
gs
gd
Gate Drain Charge
Q
Turn-On DelayTime
t
d(on)
Turn-On Rise Time
t
r
GS
=10V, V
DS
=20V, R
L
=1.5
Ω
,
R
GEN
=3
Ω
ns
Turn-Off DelayTime
t
d(off)
13.2
3.5
31
Turn-Off Fall Time
t
f
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
t
rr
rr
I
I
F
= 14A,
d
I
/d
t
= 100A/us
Q
33
nC
A
I
S
4
V
SD
S
=1A,V
GS
=0V
1
V
Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
AO4480-MS
Semiconductor
Compiance
Typical Characterisitics
100
100
80
60
40
20
0
-40
°
C
25
°
C
10V
V
DS
=5V
5V
80
4V
125
°
C
60
40
20
0
V
GS
=3.5V
V
GS
=3V
-40
°
C
25
°
C
125
°
C
2
2.5
3
3.5
4
4.5
5
5.5
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
14
12
10
8
1.6
1.4
1.2
1
V
GS
=4.5V
V
GS
=10V
I
=14A
V
GS
=4.5V
I
D
=5A
V
GS
=10V
0.8
0.6
6
0
5
10
15
20
25
30
-50 -25
0
25 50 75
100 125 150 175
I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
30
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
25
20
15
10
5
I
D
=14A
125
°
C
-40
°
C
25
°
C
25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
V
SD
(Volts)
V
GS
(Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
AO4480-MS
Semiconductor
Compiance
Typical Characterisitics
2400
2000
1600
1200
800
400
0
10
V
DS
=20V
C
iss
I
D
=14A
8
6
4
2
0
C
oss
C
rss
0
4
8
12
16
20
24
0
5
10
15
20
25
30
35
40
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
100
80
60
40
20
0
10
µ
s
100
µ
s
T
J(Max)
=150
°
C
Tc=25
°
C
10ms
1ms
100ms
R
DS(ON)
limited
10s
1s
DC
T
J(Max)
=150
°
C
T
A
=25
°
C
0.1
0.0
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
V
DS
(Volts)
.
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=75
°
C
/W
0.1
0.01
P
D
T
on
Single Pulse
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
AO4480-MS
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Sy
m
bo l
M
i
n
1.350
0.100
1.
3
50
0.330
0.170
4.800
Max
1.
7
50
0.250
1.5
5
0
0.510
0.250
5.000
M
i
n
0.053
0.004
0.0
53
0.013
0.007
0.189
Max
A
A1
A2
b
0.069
0.010
0.0
61
0.020
0.010
0.197
c
D
e
1.270（BSC）
0.050（BSC）
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
REEL SPECIFICATION
P/N
PKG
QTY
AO4480-MS
3000
SOP-8
AO4480-MS
Semiconductor
Compiance
Attention
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
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performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
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reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
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