MSKSEMI-AOD403
| Part # | MSKSEMI-AOD403 |
Download  | MSKSEMI-AOD403 |
AOD403
Product specification
AOD403
General Features
Application
MB / VGA / Vcore
POL Applications
-30
V
,-70A, RDS(ON) =5.5mΩ@VGS = – 10V
Fast switching
Load Switch
Green Device Available
LED Applicatio
Reference News
PACKAGE OUTLINE
Pin Configuration
Marking
MSKSEMI
AOD403
TO-252
Copyright© Msksemi Incorporated
AOD403
Absolute Maximum Ratings
Tc=25
℃
unless otherwise noted
Symbol
Rating
Parameter
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
V
DS
-30
±20
V
A
GS
Drain Current – Continuous (T
=25C)
C
-70
-44
I
D
Drain Current – Continuous (T
=100C)
C
A
1
Drain Current – Pulsed
I
-280
73.5
A
DM
Power Dissipation (T
=25C)
C
W
W/ C
C
P
D
Power Dissipation – Derate above 25C
Storage
T
e
mperature Range
0.58
-55 to 150
T
T
STG
Operating Junction Temperature Range
-55 to 150
C
J
Thermal Characteristics
Symbol
Typ.
Parameter
Max.
Unit
—
—
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
C
/ W
C
/ W
R
θJA
R
θJC
62
1.7
Electrical Characteristics
(
T
=25
℃
, unless otherwise noted)
J
Off
Characteristics
Symbol
Typ.
Parameter
Conditions
Min.
Max. Unit
V
GS
=0V , I
D
=
–
250uA
—
—
—
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
BV
DSS
V
–
30
—
△
BV
DSS
/△
T
J
V/
C
Reference to 2
5
C
, I
D
=
–
1
m
A
–
0.03
—
—
—
—
uA
uA
nA
V
DS
=
–
30V , V
GS
=0V , T
J
=25
C
V
DS
=
–
24V , V
GS
=0V , T
J
=125
C
–
1
Drain-Source Leakage Current
Gate-Source Leakage Current
I
DSS
–
10
—
—
V
GS
=
±
20V , V
DS
=0V
±
100
I
GSS
Copyright© Msksemi Incorporated
AOD403
On Characteristics
m
—
—
5.5
8.0
V
GS
=
–
10V , I
D
=
–
10A
V
GS
=
–
4.5V , I
D
=
–
8A
Static Drain-Source On-Resistance
R
DS(ON)
m
7.5
10
Gate Threshold Voltage
V
GS(th)
V
–
1.0
—
–
1.6
–
2.5
V
GS( th)
Temperature Coefficient
V
GS
=V
DS
, I
D
=
–
250uA
V
DS
=
–
10V , I
D
=
–
10A
—
—
△
V
GS(th)
mV/
C
4
gfs
Forward Transconductance
—
14
S
Dynamic and switching Characteristics
Total Gate Charge
2 , 3
—
—
—
—
Q
g
35
Gate-Source Charge
2 , 3
Q
gs
nC
10.8
V
DS
=
–
15V , V
GS
=
–
4.5V , I
D
=
–
10A
Q
gd
—
—
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
10.6
24.5
10.5
—
—
—
—
T
d(on)
T
r
Rise Time
2 , 3
V
DD
=
–
15V , V
GS
=
–
10V , R
G
=6
I
D
=
–
1A
ns
T
d
(
o
ff)
Turn-Off Delay Time
2 , 3
—
—
156.8
50
Fall Time
2 , 3
—
—
—
—
—
—
—
—
—
—
T
f
Input Capacitance
C
iss
C
oss
C
rss
R
g
3300
410
280
8.5
Output Capacitance
pF
V
DS
=
–
15V , V
GS
=0V , F=1MHz
V
GS
=0V, V
DS
=0V, F=1MHz
Reverse Transfer Capacitance
Gate resistance
Drain- Source
Diode Characteristics and Maximum Ratings
Symbol
Typ.
Parameter
Continuous Source Current
Pulsed Source Current
Conditions
Min.
Max. Unit
—
—
—
—
I
S
-70
-140
–
1.2
A
A
V
V
G
=V
D
=0V , Force Current
—
—
I
SM
V
SD
Diode Forward Voltage
V
GS
=0V , I
S
=
–
1A , T
J
=25
C
Note :
1 . Repetitive
Rating :
Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width
3
00
u
s
, duty cycle
2
% .
≦
≦
3 .
Essentially independent of operating temperature.
Copyright© Msksemi Incorporated
AOD403
TJ ,JunctionTemperature(
℃
)
TJ, Juction Temperature(
℃
)
Fig. 2
Normalized RDSON vs. T
J
Fig. 1
Continuous Drain Current vs.
T
C
T
J
, Junction Temperature (
℃
)
Qg , Gate Charge (
nC
)
Fig. 3
Normalized V
th
vs. T
J
Fig. 4
Gate Charge Waveform
Square Wave Pulse Duration (s)
V
DS
, Drain to Source
V
o
ltage(v)
Fig. 6
Maximum Safe Operation Area
Fig. 5
Normalized Transient Response
Copyright© Msksemi Incorporated
AOD403
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
2.200
0.000
0.635
0.460
6.500
5.100
2.400
0.127
0.770
0.580
6.700
5.460
0.087
0.000
0.025
0.018
0.256
0.201
0.094
0.005
0.030
0.023
0.264
0.215
A1
b
c
D
D1
D2
4.830 REF.
0.190 REF.
E
e
6.000
2.186
9.712
6.200
2.386
10.312
0.236
0.086
0.382
0.244
0.094
0.406
L
L1
L2
L3
L4
2.900 REF.
0.114 REF.
0.063 REF.
1.400
1.700
0.055
0.067
1.600 REF.
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
Φ
θ
h
0.000
0.300
0.000
0.012
V
5.250 REF.
0.207 REF.
Suggested Pad Layout
P/N
QTY
PKG
AOD403
TO-252
2500
Copyright© Msksemi Incorporated
AOD403
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing
equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
or contained
herein are controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from theauthorities
concerned in accordance
with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of MSKSEMI Semiconductor.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
Semiconductor productthat you intend to use.
Copyright© Msksemi Incorporated
