MSKSEMI-AOD407-MS
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AOD407-MS
Semiconductor
Compiance
TO252 Pin Configuration
Features
60V,-14A, RDS(ON) =68mΩ@VGS = -10V
–
Improved dv/dt capability
Fast switching
D
S
G
100% EAS Guaranteed
Green Device Available
Applications
D
Motor Drive
Power Tools
LED Lighting
G
BVDSS
-60V
RDSON
55m
ID
-14A
S
Absolute Maximum Ratings
Tc=25
℃
unless otherwise noted
Symbol
Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
r
ce Voltage
-60
±
20
Gate-Sou
V
Drain Current – Continuous (T
C
=25
℃
)
Drain Current – Continuous (T
C
=100
℃
)
Drain Current – Pulsed
1
-14
A
I
D
-8
A
I
DM
-52
A
EAS
IAS
Single Pulse Avalanche Energy
2
Single Pulse Avalanche Current
2
Power Dissipation (T
C
=25
℃
)
31
mJ
A
-25
20
W
P
D
Power Dissipation – Derate above 25
℃
Storage Temperature Range
0.16
-55 to 150
-55 to 150
W/
℃
℃
℃
T
STG
T
J
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
℃
/W
℃
/W
R
θJA
R
θJC
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
—
—
62
6.1
AOD407-MS
Semiconductor
Compiance
Electrical Characteristics
(T
J
=25
℃
, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=
–
250uA
℃
, I
=
–
1mA
Min.
-60
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DS
△
T
J
Reference to 25
S
/
-0.05
—
—
D
V/
℃
uA
V
DS
=
–
60V , V
GS
=0V , T
J
=25
℃
V
DS
=
–
48V , V
GS
=0V , T
J
=125
℃
V
GS
=
±
20V , V
DS
=0V
—
-1
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
-10
±
100
uA
—
—
nA
On Characteristics
—
—
55
65
-1.5
5
65
80
V
GS
=
–
10V , I
D
=
–
6A
V
GS
=
–
4.5V , I
D
=
–
3A
m
m
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
-1.0
—
-2.5
—
V
GS
=V
DS
, I
D
=
–
250uA
V
DS
=
–
10V , I
D
=
–
6A
△
V
GS(th)
mV/
℃
S
V
GS(th)
Temperature Coefficient
Forward Transconductance
gfs
—
8.5
—
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
3 , 4
Gate-Source Charge
3 , 4
Gate-Drain Charge
3 , 4
Turn-On Delay Time
3 , 4
Rise Time
3 , 4
—
—
—
—
—
—
—
—
—
—
—
16.4
2.8
nC
ns
V
DS
=
–
30V , V
GS
=
–
10V , I
D
=
–
6A
3.6
8.3
V
DD
=
–
30V , V
GS
=
–
10V , R
G
=6
29.6
51.7
15.6
870
70
T
d(off)
T
f
Turn-Off Delay Time
3 , 4
Fall Time
3 , 4
I
D
=
–
1A
C
iss
C
oss
C
rss
R
g
Input Capacitance
pF
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
DS
=
–
30V , V
GS
=0V , F=1MHz
V
GS
=0V, V
DS
=0V, F=1MHz
42
16
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=
–
1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-14
-52
-1
Unit
A
I
SM
—
—
A
V
SD
—
—
V
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
2. V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-25A.,R
G
=25
,
Starting T
J
=25
℃.
3. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
4. Essentially
independent of operating temperature.
AOD407-MS
Semiconductor
Compiance
T
J
, Junction Temperature (
℃
)
T
C
, Case Temperature (
℃
)
Fig.1 Continuous
Drain Current vs. T
C
Fig.2 Normalized
RDSON vs. T
J
T
J
, Junction Temperature (
℃
)
Qg , Gate Charge (
nC
)
Fig.3 Normalized
V
th
vs. T
J
Fig.4 Gate
Charge Waveform
-V
DS
, Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
Fig.5 Normalized
Transient Impedance
Fig.6 Maximum
Safe Operation Area
AOD407-MS
Semiconductor
Compiance
1
BV
DSS
EAS= L
x I
AS
2
x
2
V
DS
BV
DSS
-V
DD
90%
BV
DSS
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.8 EAS
Waveform
Fig.7 Switching
Time Waveform
AOD407-MS
Semiconductor Compiance
PACKAGE MECHANICAL DATA
D
A
D1
c
h
φ
A1
D2
b
e
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.200
0.000
0.635
0.460
6.500
5.100
Max.
2.400
0.127
0.770
0.580
6.700
5.460
Min.
0.087
0.000
0.025
0.018
0.256
0.201
Max.
0.094
A
A1
b
c
D
D1
D2
E
e
L
0.005
0.030
0.023
0.264
0.215
4.830 REF.
0.190 REF.
6.000
2.186
9.712
6.200
2.386
10.312
0.236
0.086
0.382
0.244
0.094
0.406
L1
L2
L3
L4
Φ
θ
2.900 REF.
0.114 REF.
0.063 REF.
1.400
1.700
0.055
0.067
1.600 REF.
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.250 REF.
0.207 REF.
REEL SPECIFICATION
QTY
P/N
PKG
AOD407-MS
TO-252
2500
AOD407-MS
Semiconductor
Compiance
Attention
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
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■
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reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
■
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product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
MSKSEMI Semiconductor productthat you intend to use.
