MSKSEMI-AOD409-MS
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AOD409-MS
Semiconductor
Compiance
TO252 Pin Configuration
Features
-60V,-25A, RDS(ON) 38mΩ @VGS = -10V
Improved dv/dt capability
Fast switching
D
Green Device Available
G
S
Applications
Networking
Load Switch
LED applications
D
G
BVDSS
-60V
RDSON
ID
-25A
38m
S
Absolute Maximum Ratings
(
Tc=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Rating
Units
V
Drain-Source Voltage
r
ce Voltage
-60
±
20
V
GS
Gate-Sou
V
Drain Current – Continuous (T
C
=25
℃
)
Drain Current – Continuous (T
C
=100
℃
)
Drain Current – Pulsed
1
-25
A
I
D
-16
A
I
DM
P
D
-100
A
Power Dissipation (T
C
=25
℃
)
72
W
Power Dissipation – Derate above 25
℃
Storage Temperature Range
0.578
-55 to 150
-55 to 150
W/
℃
℃
T
STG
T
J
℃
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
62
Unit
℃
/W
℃
/W
R
θJA
R
θJC
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
—
—
1.73
AOD409-MS
Semiconductor
Compiance
Electrical Characteristics
(T
J
=25
℃
, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-60
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
DS
=-60V , V
GS
=0V , T
J
=25
℃
V
DS
=-48V , V
GS
=0V , T
J
=125
℃
—
-1
uA
uA
nA
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
-10
V
GS
=
±
20V , V
DS
=0V
±
100
—
—
On Characteristics
V
GS
=-10V , I
D
=-8A
V
GS
=-4.5V , I
D
=-6A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-10V , I
S
=-3A
—
—
38
46
48
60
m
m
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS(th)
gfs
Gate Threshold Voltage
-1.0
—
-1.6
11
-2.5
—
Forward Transconductance
S
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
—
—
—
—
—
—
—
—
—
—
—
19
2.5
4.3
25
30
3.8
6.5
40
V
DS
=-30V , V
GS
=-10V , I
D
=-10A
nC
ns
V
DD
=-30V , V
GS
=-10V , R
G
=25
58
95
T
d(off)
T
f
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
65
110
55
I
D
=-10A
35
C
iss
C
oss
C
rss
R
g
Input Capacitance
1200
85
1800
130
90
V
DS
=-30V , V
GS
=0V , F=1MHz
V
GS
=0V, V
DS
=0V, F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
60
14
—
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
Conditions
Min.
—
Typ.
—
Max.
-25
-50
-1
Unit
A
V
G
=V
D
=0V , Force Current
I
SM
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
V
R
=-50V, I
S
=-10A
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
V
—
30
20
—
ns
nC
di/dt=100A/µs, T
J
=25
℃
Q
rr
—
—
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-34A.,Starting T
J
=25
℃
2.
3. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
4. Essentially
independent of operating temperature.
AOD409-MS
Semiconductor
Compiance
T
J
, Junction Temperature (
℃
)
-V
DS
,Drain to Source Voltage (
V
)
Fig.1 Typical
Output Characteristics
Fig.2 Normalized
RDSON vs. T
J
T
J
, Junction Temperature (
℃
)
Qg , Gate Charge (
nC
)
Fig.4 Gate
Charge Waveform
Fig.3 Normalized
V
th
vs. T
J
T
C
, Case Temperature (
℃
)
-V
DS
, Drain to Source Voltage (
V
)
Fig.5 Continuous
Drain Current vs. T
J
Fig.6 Capacitance
Characteristics
AOD409-MS
Semiconductor
Compiance
-V
DS
, Drain to Source Voltag
e
(
V)
Square Wave Pulse Duration (s)
Fig.7 Normalized
Transient Impedance
Fig.8 Maximum
Safe Operation Area
AOD409-MS
Semiconductor Compiance
PACKAGE MECHANICAL DATA
D
A
D1
c
h
φ
A1
D2
b
e
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.200
0.000
0.635
0.460
6.500
5.100
Max.
2.400
0.127
0.770
0.580
6.700
5.460
Min.
0.087
0.000
0.025
0.018
0.256
0.201
Max.
0.094
A
A1
b
c
D
D1
D2
E
e
L
0.005
0.030
0.023
0.264
0.215
4.830 REF.
0.190 REF.
6.000
2.186
9.712
6.200
2.386
10.312
0.236
0.086
0.382
0.244
0.094
0.406
L1
L2
L3
L4
Φ
θ
2.900 REF.
0.114 REF.
0.063 REF.
1.400
1.700
0.055
0.067
1.600 REF.
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.250 REF.
0.207 REF.
REEL SPECIFICATION
QTY
P/N
PKG
AOD409-MS
TO-252
2500
AOD409-MS
Semiconductor
Compiance
Attention
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
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performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
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reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
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