MSKSEMI-AOD607-MS
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AOD607-MS
Semiconductor
Compiance
TO252-4 Pin
Configuration
Features
D1/D2
Fast switching
Green Device Available
Suit for 4.5V Gate Drive Applications
Applications
G2
S2
G1
DC Fan
S1
Motor Drive Applications
Networking
D1/D2
Half / Full Bridge Topology
G1
BVDSS
RDSON
15m
ID
G2
30V
16A
-12A
-30V
30m
S1
S2
Symbol
Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
30
±20
16
-30
±20
-12
-7.6
-48
Gate-Sou
r
ce Voltage
V
Drain Current – Continuous (T
C
=25
℃
)
Drain Current – Continuous (T
C
=100
℃
)
Drain Current – Pulsed
1
A
I
D
A
10.1
64
I
DM
P
D
A
Power Dissipation (T
C
=25
℃
)
Power Dissipation – Derate above 25
℃
Storage Temperature Range
Operating Junction Temperature Range
32.5
0.26
W
W/
℃
℃
℃
T
STG
T
J
-55 to 150
-55 to 150
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
62.5
3.84
Unit
℃
/W
℃
/W
R
θJA
R
θJC
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
—
—
AOD607-MS
Semiconductor
Compiance
N-CH Electrical Characteristics
(T
J
=25
℃
, unless otherwise) noted)
Off Characteristics
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
DS
=30V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=125
℃
V
GS
=
±
20V , V
DS
=0V
—
1
uA
uA
nA
I
DSS
Drain-Source Leakage Current
—
—
10
I
GSS
Gate-Source Leakage Current
—
—
±
100
On Characteristics
V
GS
=10V , I
D
=10A
V
GS
=4.5V , I
D
=5A
—
—
15
30
1.5
-4
30
40
2.5
—
m
m
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS(th)
△
V
GS(th)
gfs
Gate Threshold Voltage
1.0
—
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=3A
V
GS(th)
Temperature Coefficient
Forward Transconductance
mV/
℃
S
—
6
—
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
3 , 4
Gate-Source Charge
3 , 4
Gate-Drain Charge
3 , 4
Turn-On Delay Time
3 , 4
Rise Time
3 , 4
—
—
—
—
—
—
—
—
—
—
—
7.4
2.3
3
V
DS
=15V , V
GS
=4.5V , I
D
=5A
nC
ns
3.8
10
V
DD
=15V , V
GS
=10V , R
G
=6
Turn-Off Delay Time
3 , 4
Fall Time
3 , 4
22
I
D
=1A
T
d(off)
T
f
6.6
620
85
C
iss
C
oss
C
rss
Rg
Input Capacitance
V
DS
=25V , V
GS
=0V , F=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
60
2.8
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
Min.
—
Typ.
—
Max.
16
Unit
A
V
G
=V
D
=0V , Force Current
I
SM
—
—
32
A
V
SD
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
1
V
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
2. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially
independent of operating temperature.
AOD607-MS
Semiconductor
Compiance
T
J
, Junction Temperature (
℃
)
T
C
, Case Temperature (
℃
)
Fig.2 Normalized
RDSON vs. T
J
Fig.1 Continuous
Drain Current vs. T
C
Qg , Gate Charge (nC)
T
J
, Junction Temperature (
℃
)
Fig.3 Normalized
V
th
vs. T
J
Fig.4 Gate
Charge Waveform
V
DS
, Drain to Source Voltag
e
(
V)
Square Wave Pulse Duration (s)
Fig.5 Normalized
Transient Response
Fig.6 Maximum
Safe Operation Area
AOD607-MS
Semiconductor
Compiance
P-CH Electrical Characteristics
(T
J
=25
℃
, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=
–
250uA
Min.
–
30
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DS
△
T
J
Reference to 25
℃
, I
D
=
–
1mA
V
DS
=
–
30V , V
GS
=0V , T
J
=25
℃
V
DS
=
–
24V , V
GS
=0V , T
J
=125
℃
V
GS
=
±
20V , V
DS
=0V
S
/
–
0.03
—
—
V/
℃
uA
—
–
1
I
DSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
–
10
±
100
uA
I
GSS
—
—
nA
On Characteristics
V
GS
=
–
10V , I
D
=
–
7A
V
GS
=
–
4.5V , I
D
=
–
4A
—
—
–
1
—
—
30
45
–
1.5
4
40
68
m
m
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
–
2.5
—
V
GS
=V
DS
, I
D
=
–
250uA
V
DS
=
–
10V , I
D
=
–
3A
△
V
GS(th)
V
GS(th)
Temperature Coefficient
Forward Transconductance
mV/
℃
S
gfs
9
—
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
—
—
—
—
—
—
—
—
—
—
8
nC
ns
3.3
2.3
4.6
14
V
DS
=
–
15V , V
GS
=
–
4.5V , I
D
=
–
5A
V
DD
=
–
15V , V
GS
=
–
10V , R
G
=6
T
d(off)
T
f
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
34
I
D
=
–
1A
18
C
iss
C
oss
C
rss
Input Capacitance
757
122
88
pF
Output Capacitance
Reverse Transfer Capacitance
V
DS
=
–
15V , V
GS
=0V , F=1MHz
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
Min.
—
Typ.
—
Max.
–
12
Unit
A
V
G
=V
D
=0V , Force Current
I
SM
—
—
–
24
A
V
GS
=0V , I
S
=
–
1A , T
J
=25
℃
V
SD
—
—
–
1.2
V
Note :
4. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
5. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
6. Essentially
independent of operating temperature.
AOD607-MS
Semiconductor
Compiance
T
C
, Case Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.1 Continuous
Drain Current vs. T
C
Fig.2 Normalized
RDSON vs. T
J
T
J
, Junction Temperature (
℃
)
Qg , Gate Charge (
nC
)
Fig.3 Normalized
V
th
vs. T
J
Fig.4 Gate
Charge Waveform
Square Wave Pulse Duration (s)
-V
DS
, Drain to Source Voltag
e
(
V)
Fig.5 Normalized
Transient Impedance
Fig.6 Maximum
Safe Operation Area
AOD607-MS
Semiconductor Compiance
PACKAGE MECHANICAL DATA
D
A
D1
c
h
φ
A1
D2
b
e
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.200
0.000
0.635
0.460
6.500
5.100
Max.
2.400
0.127
0.770
0.580
6.700
5.460
Min.
0.087
0.000
0.025
0.018
0.256
0.201
Max.
0.094
A
A1
b
c
D
D1
D2
E
e
L
0.005
0.030
0.023
0.264
0.215
4.830 REF.
0.190 REF.
6.000
2.186
9.712
6.200
2.386
10.312
0.236
0.086
0.382
0.244
0.094
0.406
L1
L2
L3
L4
Φ
θ
2.900 REF.
0.114 REF.
0.063 REF.
1.400
1.700
0.055
0.067
1.600 REF.
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.250 REF.
0.207 REF.
REEL SPECIFICATION
QTY
P/N
PKG
AOD607-MS
TO-252
-4
2500
AOD607-MS
Semiconductor
Compiance
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
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■
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■
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reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
MSKSEMI Semiconductor productthat you intend to use.
