MSKSEMI-AOD609-MS
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AOD609-MS
Semiconductor
Compiance
TO252-4 Pin
Configuration
Features
Fast switching
Green Device Available
Suit for 4.5V Gate Drive Applications
D1/D2
Applications
G2
S2
DC Fan
G1
S1
Motor Drive Applications
Networking
Half / Full Bridge Topology
D1/D2
G1
G2
BVDSS
40V
RDSON
19m
ID
15A
-12A
S1
S2
-40V
38m
Absolute Maximum Ratings
Tc=25
℃
unless otherwise noted
Symbol Parameter
Rating
Units
V
DS
V
GS
Drain-Source Voltage
40
-40
V
V
Gate-Sou
r
ce Voltage
±
20
15
±20
-12
-7
Drain Current – Continuous (T
C
=25
℃
)
Drain Current – Continuous (T
C
=100
℃
)
Drain Current – Pulsed
1
A
I
D
9
A
I
DM
P
D
60
-48
A
Power Dissipation (T
C
=25
℃
)
20
W
W/
℃
℃
℃
Power Dissipation – Derate above 25
℃
Storage Temperature Range
0.16
T
STG
T
J
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
6
Unit
℃
/W
℃
/W
R
θJC
R
θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
—
—
62
AOD609-MS
Semiconductor
Compiance
N-CH Electrical Characteristics
(T
J
=25
℃
, unless otherwise)
Off Characteristics
Symbol
Parameter
Conditions
Min.
40
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V , I
D
=250uA
Reference to 25
℃
, I
D
=1mA
V
DS
=40V , V
GS
=0V , T
J
=25
℃
V
DS
=32V , V
GS
=0V , T
J
=125
℃
V
GS
=±20V , V
DS
=0V
V/
℃
uA
O
BV
DSS
/
O
T
J
BV
DSS
Temperature Coefficient
0.04
—
—
—
1
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
10
uA
—
—
±100
nA
On Characteristics
V
GS
=10V , I
D
=6A
V
GS
=4.5V , I
D
=4A
—
—
19
30
1.5
-3
30
42
2.5
—
m
R
DS(ON)
Static Drain-Source On-Resistance
m
V
V
GS(th)
Gate Threshold Voltage
1.0
—
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=3A
O
V
GS(th)
mV/
℃
S
V
GS(th)
Temperature Coefficient
Forward Transconductance
gfs
—
6.5
—
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
—
—
—
—
—
—
—
—
—
—
5.2
1.2
2.5
3.2
8.6
18
V
DS
=20V , V
GS
=4.5V , I
D
=6A
nC
ns
V
DD
=20V , V
GS
=4.5V , R
G
=25
T
d(off)
T
f
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
I
D
=1A
6
C
iss
C
oss
C
rss
Input Capacitance
420
65
V
DS
=15V , V
GS
=0V , F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
40
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
Min.
—
Typ.
—
Max.
15
30
1
Unit
A
V
G
=V
D
=0V , Force Current
I
SM
—
—
A
V
SD
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3.
Essentially independent of operating temperature.
AOD609-MS
Semiconductor
Compiance
T
J
, Junction Temperature (
℃
)
T
C
, Case Temperature (
℃
)
Fig.1 Continuous Drain Current vs. T
C
Fig.2 Normalized
RDSON vs. T
J
T
J
, Junction Temperature (
℃
)
Qg , Gate Charge (
nC
)
Fig.4 Gate
Charge Waveform
Fig.3 Normalized
V
th
vs. T
J
V
DS
, Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
Fig.5 Normalized
Transient Impedance
Fig.6 Maximum Safe Operation Area
AOD609-MS
Semiconductor
Compiance
P-CH Electrical Characteristics
(T
J
=25
℃
, unless otherwise
Off Characteristics
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=
–
250uA
Reference to 25
℃
, I
D
=
Min.
–
40
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
–
1mA
–
0.04
—
—
V/
℃
uA
V
DS
=
–
40V , V
GS
=0V , T
J
=25
℃
V
DS
=
–
32V , V
GS
=0V , T
J
=125
℃
V
GS
=
±
10V , V
DS
=0V
—
–
1
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
–
10
±
100
uA
—
—
nA
On Characteristics
V
GS
=
–
10V , I
D
=
–
5A
V
GS
=
–
4.5V , I
D
=
–
3A
—
—
38
45
–
1.5
3
45
70
m
m
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS(th)
△
V
GS(th)
gfs
Gate Threshold Voltage
–
1.0
—
–
2.5
—
V
GS
=V
DS
, I
D
=
–
250uA
V
DS
=
–
10V , I
D
=
–
3A
V
GS(th)
Temperature Coefficient
Forward Transconductance
mV/
℃
S
—
9
—
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
—
—
—
—
—
—
—
—
—
—
9
2.5
3.2
20
nC
ns
V
DS
=
–
20V , V
GS
=
–
4.5V , I
D
=
–
5A
12
V
DD
=
–
20V , V
GS
=
–
4.5V , R
G
=25
T
d(off)
T
f
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
46
I
D
=
–
1A
6
C
iss
C
oss
C
rss
Input Capacitance
1050
110
80
pF
Output Capacitance
Reverse Transfer Capacitance
V
DS
=
–
15V , V
GS
=0V , F=1MHz
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=
–
1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
–
12
–
24
–
1
Unit
A
I
SM
—
—
A
V
SD
—
—
V
Note :
4.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
5.
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
6.
Essentially independent of operating temperature.
AOD609-MS
Semiconductor Compiance
PACKAGE MECHANICAL DATA
D
A
D1
c
h
φ
A1
D2
b
e
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.200
0.000
0.635
0.460
6.500
5.100
Max.
2.400
0.127
0.770
0.580
6.700
5.460
Min.
0.087
0.000
0.025
0.018
0.256
0.201
Max.
0.094
A
A1
b
c
D
D1
D2
E
e
L
0.005
0.030
0.023
0.264
0.215
4.830 REF.
0.190 REF.
6.000
2.186
9.712
6.200
2.386
10.312
0.236
0.086
0.382
0.244
0.094
0.406
L1
L2
L3
L4
Φ
θ
2.900 REF.
0.114 REF.
0.063 REF.
1.400
1.700
0.055
0.067
1.600 REF.
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.250 REF.
0.207 REF.
REEL SPECIFICATION
QTY
P/N
PKG
AOD609-MS
TO-252
-4
2500
AOD609-MS
Semiconductor
Compiance
T
J
, Junction Temperature (
℃
)
T
C
, Case Temperature (
℃
)
Fig.7 Continuous Drain Current vs. T
C
Fig.8 Normalized
RDSON vs. T
J
T
J
, Junction Temperature (
℃
)
Qg , Gate Charge (
nC
)
Fig.10 Gate
Charge Waveform
Fig.9 Normalized
V
th
vs. T
J
-V
DS
, Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
Fig.12 Maximum Safe Operation Area
Fig.11 Normalized
Transient Impedance
AOD609-MS
Semiconductor
Compiance
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
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or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
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guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
MSKSEMI Semiconductor productthat you intend to use.
