MSKSEMI-AON3611-MS
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AON3611-MS
Product specification
AON3611-MS
Description
The AON3611-MS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with
gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Application
Features
V
DS
= 30V
I
D
=16 A
Battery protection
R
DS(ON)
< 20mΩ @ V
GS
=10V
V
DS
= -30V
I
D
=- 14A
Load switch
R
DS(ON)
< 30mΩ @ V
GS
=10V
Uninterruptible power supply
Reference News
PACKAGE OUTLINE
N+P-Channel MOSFET
Marking
MSKSEMI
AON3611
N+P30
PIN1
DFN3X3-8L
Copyright© Msksemi Incorporated
AON3611-MS
Absolute Maximum Ratings
(TC=25
℃
unless otherwise specified)
Rating
Symbol
Parameter
Units
N-Channel
P-Channel
-30
V
DS
V
GS
Drain-Source Voltage
30
V
V
±
20
±
20
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
16
5
-14
-4
A
A
A
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
2.3
1.8
-1.8
-1.5
I
DM
EAS
40
-40
110
– 20
10.8
A
mJ
A
Single Pulse
Avalanche Energy
3
26.6
8.7
I
AS
Avalanche Current
Total Power Dissipation
4
P
D
@T
C
=25
℃
10.8
W
Total Power Dissipation
4
Storage Temperature Range
2
-55 to 150
-55 to 150
—
2
-55 to 150
-55 to 150
62
W
P
D
@T
A
=100
℃
T
STG
T
J
℃
Operating Junction Temperature Range
℃
1
Thermal Resistance
Junction-Ambient
R
θJA
R
θJC
℃
/W
℃
/W
Thermal Resistance
Junction-Case
1
—
6
N-Channel Electrical Characteristics (T
J
=25 ,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
Typ.
Max.
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
30
—
—
—
20
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=
1
mA
V
GS
=
1
0V , I
D
=
1
0A
0.023
V/
℃
—
—
14
20
Static Drain-Source On-Resistance
2
mΩ
R
DS(ON)
V
GS
=4.5V , I
D
=6A
25
—
Gate Threshold Voltage
1.0
2.5
V
V
GS(th)
—
V
GS
=V
DS
, I
D
=250uA
V
GS(th)
Temperature Coefficient
-4.2
mV/
℃
△
V
GS(th)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
V
DS
=24V ,
V
GS
=0V , T
J
=25
℃
V
DS
=24V ,
V
GS
=0V , T
J
=55
℃
—
—
Drain-Source Leakage Current
uA
I
DSS
5
V
GS
=
±
20V , V
DS
=0V
Gate-Source Leakage Current
nA
S
I
GSS
gfs
R
g
±
100
—
14
Forward Transconductance
Gate Resistance
V
DS
=5V , I
D
=
1
0A
—
—
—
—
—
—
—
—
—
—
—
—
V
DS
=0V ,
V
GS
=0V , f
=
1
MHz
2.3
5
Ω
Total Gate
Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Q
g
V
DS
=20V , V
GS
=4.5V , I
D
=
1
0A
nC
ns
1.11
2.61
7.7
46
Q
gs
Q
gd
T
d(on)
T
r
Turn-On Delay
Time
Rise Time
V
DD
= 12V , V
GS
=
1
0V , R
G
=3.3Ω
I
D
=6A
Turn-Off Delay Time
Fall Time
11
T
d(off)
T
f
3.6
416
62
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= 15V , V
GS
=0V , f
=
1
MHz
pF
51
Copyright© Msksemi Incorporated
AON3611-MS
Diode Characteristics
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
16
A
A
V
—
—
—
—
—
—
V
G
=V
D
=0V , Force Current
I
SM
V
SD
30
V
GS
=0V , I
S
=
1
A , T
J
=25
℃
1.2
Note :
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=12.7A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (T
=25 ,
unless otherwise noted)
J
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Min. Typ. Max. Unit
-30
V
—
—
—
30
△
BV
DSS
/
△
T
J
BV
DSS
Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-8A
-0.021
V/
℃
—
25
30
—
Static Drain-Source On-Resistance
2
mΩ
R
DS(ON)
V
GS
=-4.5V , I
D
=-6A
35
—
Gate Threshold Voltage
-1.0
-2.5
V
V
GS(th)
—
V
GS
=V
DS
, I
D
=-250uA
V
GS(th)
Temperature Coefficient
-4.2
mV/
℃
△
V
GS(th)
—
—
—
—
—
—
1
V
DS
=-24V ,
V
GS
=0V , T
J
=25
℃
—
—
Drain-Source Leakage Current
uA
I
DSS
V
DS
=-24V ,
V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
5
Gate-Source Leakage Current
nA
S
I
GSS
gfs
R
g
±
100
—
Forward Transconductance
Gate Resistance
V
DS
=-5V , I
D
=-8A
12.6
—
—
—
—
—
—
—
—
—
—
—
—
V
DS
=0V ,
V
GS
=0V , f
=
1
MHz
15
9.8
2.2
3.4
16.4
20.2
55
Ω
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Q
g
—
—
—
—
—
—
—
—
—
—
V
DS
=-20V , V
GS
=-4.5V , I
D
=-6A
nC
Q
gs
Q
gd
T
d(on)
T
r
Turn-On Delay
Time
Rise Time
V
DD
=-24V ,
V
GS
=-10V , R
G
=3.3Ω,
I
D
=-1A
ns
Turn-Off Delay Time
Fall Time
T
d(off)
T
f
10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
930
148
115
V
DS
=-15V ,
V
GS
=0V , f
=
1
MHz
pF
Diode Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
-14
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
—
—
—
—
—
—
V
G
=V
D
=0V , Force Current
-24
A
I
SM
V
SD
V
GS
=0V , I
S
=-1A , T
J
=25
℃
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-30A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Copyright© Msksemi Incorporated
AON3611-MS
N-Channel Typical Characteristics
65
50
35
20
50
I
D
=10A
40
V
GS
=10V
V
GS
=7V
V
GS
=5V
30
20
V
GS
=4.5V
10
0
V
GS
=3V
2
4
6
8
10
0
0.5
1
1.5
2
V
GS
(V)
V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
7.5
5
6
V
DS
=20V
I
D
=10A
4
2
0
T
J
=150
℃
T
J
=25
℃
2.5
0
0
2.5
5
7.5
10
0.00
0.25
0.50
0.75
1.00
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1 . 8
1 . 4
1 . 0
0 . 6
0 . 2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
– 5 0
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, J
u n c t i o n
T e m p
℃
e
)
r
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Copyright© Msksemi Incorporated
AON3611-MS
1000
100
10
1 0 0 . 0 0
1 0 . 0 0
1 . 0 0
F=1.0MHz
Ciss
100us
1 m s
Coss
Crss
10
m
s
100m
DC
0 . 1 0
Tc = 2
o
5C
Single Pul
0 . 0 1
1
5
9
13
17
21
25
10
DS
(V)
0. 1
1
100
1000
V
V
DS
Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
P
DM
0.05
0.02
T
ON
T
D = T
ON
/T
0.01
T
Jpeak
= T
C
+P
DM
XR
θJC
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
2
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Copyright© Msksemi Incorporated
AON3611-MS
P-Channel Typical Characteristics
50
45
50
40
30
20
I
D
=-12A
40
35
V
GS
=-10V
30
25
20
15
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
10
5
V
GS
=-3V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
2
4
6
8
10
-V
-V
GS
(V)
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
V
DS
=-20V
I
D
=-12A
10
8
8
6
4
2
T
J
=150
℃
6
4
2
0
T
J
=25
℃
0
0
5
10
15
20
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2 . 0
1 . 5
1 . 0
0 . 5
1.5
1
0.5
0
– 5 0
0
50
100
e
)
r
150
-50
0
50
100
150
T
J
,
J u n c t i o n
T e m p
℃
T
J
,Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Copyright© Msksemi Incorporated
AON3611-MS
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
10ms
100ms
DC
Coss
Crss
0.10
Tc=25
o
C
Single Pulse
0.01
10
0.1
1
10
DS
(V)
100
1000
9
13
17
21
25
1
5
-V
-V
DS
Drain to Source Voltage(V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1
0.1
P
DM
0.05
0.02
T
ON
T
D = T
ON
/T
0.01
T
Jpeak
= T
C
+P
DM
XR
θJC
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
Copyright© Msksemi Incorporated
AON3611-MS
DFN3X3-8
L
P
ackag
e
I
nformation
P/N
PKG
QTY
AON7401-MS
DFN3X3-8L
5000
Copyright© Msksemi Incorporated
AON3611-MS
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing
equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
or contained
herein are controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from theauthorities
concerned in accordance
with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of MSKSEMI Semiconductor.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
Semiconductor productthat you intend to use.
Copyright© Msksemi Incorporated
