MSKSEMI-AON6236-MS
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AON6236-MS
Product specification
AON6236-MS
Description
The AON6236-MS
uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching
application.
Features
Application
Battery protection
V
DS
= 40V
I
D
=50A
R
DS(ON)
< 14mΩ
V
GS
=10V
Load switch
Uninterruptible power supply
Reference News
PACKAGE OUTLINE
N-Channel MOSFET
Marking
MSKSEMI
AON62
3
6
N40
PIN1
DFN5X6-8L
Absolute Maximum Ratings (TC=25
℃
unless otherwise noted)
Symbol
Rating
40
Parameter
Drain- Source
Voltage
Units
V
DS
V
GS
V
V
Gate- Sou
r
ce Voltage
±
20
50
1
1
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
A
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
38
Pulsed Drain Current
2
I
DM
160
50
A
EAS
Single Pulse Avalanche Energy
3
mJ
T
STG
Storage Temperature Range
-55 to 175
-55 to 175
℃
J
Operating Junction Temperature Range
T
℃
Copyright© Msksemi Incorporated
AON6236-MS
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(
N
ote
2
)
R
θJC
1.76
℃
/W
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristic
V
GS
=0V, I
D
=250μA
V
DS
=40V, V
GS
= 0V,
V
DS
=0V, V
GS
= ±20V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
40
V
V
(BR)DSS
I
DSS
–
–
–
–
1
μA
μA
–
–
I
GSS
±100
On Characteristics
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=30A
Gate Threshold Voltage
1.0
–
1.6
11
2.5
14
V
V
GS(th)
Static Drain-Source on-Resistance
mΩ
S
R
DS(on)
g
FS
Forward Transconductance
30
–
–
V
D
s=5V,I
D
=20A
(
N
ote
4
)
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
1540
171
pF
pF
pF
–
–
–
–
–
–
V
DS
=25V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
115
(
N
ote
4
)
Switching Characteristics
t
d(on)
t
r
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
5
ns
ns
–
–
–
–
–
–
–
–
–
–
–
–
–
–
24
38
12
24
5.9
3.6
V
DD
=20V, I
D
=20A,R
L=1Ω
V
GS
=10V, R
GEN
=3Ω
t
d(off)
t
f
ns
ns
nC
nC
nC
Q
g
Q
gs
Q
gd
V
DS
=30V, I
D
=30A,
V
GS
=10V
Drain-Source Diode Characteristics and Maximum Ratings
Drain Forward Current
(
N
ote
2
)
48
A
I
S
–
–
Drain Forward Current
(
N
ote
3
)
V
GS
=0V, I
S
=30A
1.2
–
V
V
SD
–
–
–
TJ=25
℃
，
IF=30A
di/dt=100A/μs
(
N
ote
3
)
trr
Reverse Recovery Time
Reverse Recovery Charge
9
ns
Qrr
t
on
15
nC
–
–
Intrinsic turn-on time is negligible(turn-on is dominated br LS+LD
Forward Turn-On Time
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t≤10 sec.
3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to production
5. E
A
s condition: Tj=25
℃
,V
DD
=30V,V
G
=10V,L=0.5mH,Rg=25Ω
Copyright© Msksemi Incorporated
AON6236-MS
DFN5X6-8
L
P
ackag
e
I
nformation
MM
NOM
5
INCH
NOM
0.197
0.193
0.236
0.226
0.037
0.010REF
0.157
0.016
0.5TYP
10。
SYMBOL
MIN
MAX
5.05
4.98
6.02
5.83
1
MIN
0.195
0.190
0.235
0.223
0.035
MAX
0.199
0.196
0.237
0.230
0.039
A
A1
D
4.95
4.82
5.98
5.67
0.9
4.9
6
D1
B
5.75
0.95
0.254REF
4
B1
C
3.95
0.35
4.05
0.45
0.156
0.014
0.159
0.018
C1
C2
Ɵ
1
L1
L2
L3
H
0.4
1.27TYP
10。
0.64
1.3
8。
0.63
1.2
12。
0.65
1.4
8。
0.025
0.047
0.134
0.009
12。
0.026
0.055
0.135
0.010
0.025
0.051
0.135
0.010
3.415
0.24
3.42
0.25
3.425
0.26
REEL SPECIFICATION
P/N
PKG
QTY
AON6236-MS
DFN5X6-8L
5000
Copyright© Msksemi Incorporated
AON6236-MS
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performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
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