MSKSEMI-AON7422E-MS
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AON7422E-MS
Product specification
AON7422E-MS
Description
The AON7422E-MS uses advanced trench technologyto provide excellent RDS(ON) , low gate charge andoperation with gate
voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protection or in other Switching application.
Application
Features
Battery protection
VDS = 30V
ID =80 A
Load switch
RDS(ON) < 6 mΩ
@ VGS=10V
Uninterruptible power supply
Reference News
PACKAGE OUTLINE
N-Channel MOSFET
Marking
MSKSEMI
7422E
N30
PIN1
DFN3X3-8L
Absolute Maximum Ratings
(TC=25
℃
unless otherwise specified)
Symbol
VDS
Rating
Units
Parameter
Drain-Source Voltage
30
V
V
A
A
A
VGS
Gate-Sou
r
ce Voltage
±
20
80
I
D
@
T
C
=25
℃
I
D
@
T
C
=100
℃
IDM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
50
Pulsed Drain Current
2
162
144.7
53.8
62.5
EAS
Single Pulse Avalanche Energy
3
mJ
A
IAS
Avalanche Current
P
D
@
T
C
=25
℃
TSTG
Total Power Dissipation
4
W
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
℃
-55 to 150
T
J
℃
-55 to 150
62
℃
/ W
℃
/ W
R
θ
JA
2.4
R
θ
JC
Copyright© Msksemi Incorporated
AON7422E-MS
Electrical Characteristics
(TJ=25
℃
, unless otherwise noted)
Typ.
Unit
V
Symbol
Parameter
Conditions
Min.
Max.
Drain-Source Breakdown Voltage
30
BV
DSS
V
GS
=0V , I
D
=250uA
—
—
△
BV
DSS
/ △
T
J
BVDSS Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=30A
0.0213
V/
℃
—
—
—
6
4.7
5.9
Static Drain-Source On-Resistance
2
R
DS(ON)
m
Ω
8
V
GS
=4.5V , I
D
=15A
—
Gate Threshold Voltage
1.0
1.5
2.5
V
V
GS(th)
V
GS
=V
DS
, I
D
=250uA
△
V
GS( th)
-5.73
V
GS(th)
Temperature Coefficient
Mv/
℃
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
—
—
Drain-Source Leakage Current
uA
I
DSS
5
Gate-Source Leakage Current
Forward Transconductance
nA
S
I
GSS
gfs
±
100
—
26.5
V
DS
=5V , I
D
=30A
—
1.4
31.6
8.6
2.8
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
Gate Resistance
Ω
Total Gate Charge (4.5V)
Q
g
—
—
—
—
—
—
nC
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
V
DS
=15V , V
GS
=4.5V , I
D
=15A
Q
gs
Q
gd
T
d(on)
11.7
9
19
V
DD
=15V , V
GS
=10V , R
G
=3.3
T
r
Rise Time
ns
pF
Turn-Off Delay Time
58
T
d(off)
Ω
I
D
=15A
15.2
3075
400
315
T
f
Fall Time
—
Input Capacitance
4000
C
iss
C
oss
C
rss
Output Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
530
—
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Typ.
Unit
Parameter
Conditions
Min.
Max.
80
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
A
A
I
S
—
—
—
—
—
—
—
V
G
=V
D
=0V , Force Current
162
1
I
SM
V
SD
V
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
IF=30A , dI/dt=100A/µs ,
Reverse Recovery Time
18
nS
nC
t
rr
—
—
Reverse Recovery Charge
8
T
J
=
2 5
℃
Q
rr
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0. 1mH,I
AS
=53.8A
4.The power dissipation is limited by 175
C
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Copyright© Msksemi Incorporated
AON7422E-MS
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Copyright© Msksemi Incorporated
AON7422E-MS
Fig.7 Capacitance
Fig.8 Safe Operating Area
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Copyright© Msksemi Incorporated
AON7422E-MS
DFN3X3-8
L
P
ackag
e
I
nformation
Dimensions In Millimeters
Symbol
Min.
0.70
0.25
0.10
3.25
3.00
1.48
Nom.
0.75
0.30
0.15
3.35
3.10
1.58
0.13
Max.
0.80
0.35
0.25
3.45
3.20
1.68
A
b
c
D
D1
D2
D3
–
–
E
E1
E2
e
3.20
3.00
2.39
3.30
3.15
3.40
3.20
2.59
2.49
0.65BSC
0.39
H
L
0.30
0.30
0.50
0.50
0.40
L1
0.13
–
–
M
0.15
*
*
。
。
θ
10
12
REEL SPECIFICATION
P/N
PKG
QTY
AON7422E-MS
DFN3X3-8L
5000
Copyright© Msksemi Incorporated
AON7422E-MS
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
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at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
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or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
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production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
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