MSKSEMI-AON7506-MS

AON7506-MS  

Product specification  

AON7506-MS  

Description  

The AON7506-MS uses advanced trench technology to provide excellent R

DS(ON)

, low gate charge and operation with gate voltages  

as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application  

Application  

Features  







Battery protection  

VDS = 30V ID =50 A  

Load switch  

RDS(ON) < 10mΩ @ VGS=10V  

Uninterruptible power supply  

Reference News  

PACKAGE OUTLINE  

N-Channel MOSFET  

Marking  

50N03  

xxxx  

PIN1  

DFN3X3-8L  

Absolute Maximum Ratings

(TC=25

℃

unless otherwise specified)  

Symbol  

Rating  

Units  

Parameter  

V

DS  

Drain-Source Voltage  

30  

V

V

GS  

I

D

@

T

C

=25

℃

 

I

D

@

T

C

=100

℃  

I

D

@

T

A

=25

℃  

I

D

@

T

A

=70

℃  

I

DM  

V

A

Gate-Sou

r

ce Voltage  

±

20  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

50  

30  

11  

A

A

9

A

Pulsed Drain Current

2  

112  

24.2  

22  

A

EAS  

Single Pulse Avalanche Energy

3  

mJ  

A

I

AS  

Avalanche Current  

Total Power Dissipation

4  

Total Power Dissipation

4  

Storage Temperature Range  

37.5  

2.42  

W

W

P

D

@

T

C

=25

℃  

P

D

@

T

A

=25

℃  

T

STG  

-55 to 175  

-55 to 175  

62  

℃

Operating Junction Temperature Range  

Thermal Resistance Junction-Ambient

1  

Thermal Resistance Junction-Case

1  

T

J  

℃

R

θJA  

R

θJC  

℃

/ W  

℃

/ W  

4

Copyright© Msksemi Incorporated  

AON7506-MS  

Electrical Characteristics

(TJ=25

℃

, unless otherwise noted)  

Symbol  

BV

DSS  

Typ.  

Unit  

V

Parameter  

Drain-Source Breakdown Voltage  

Conditions  

V

GS

=0V , I

D

=250uA  

Min.  

30  

Max.  

—  

—  

BVDSS Temperature Coefficient  

0.0193  

△

BV

DSS

/

△

T

J  

Reference to 25

℃

, I

D

=1mA  

V/

℃  

—  

—  

—  

V

GS

=10V , I

D

=30A  

10  

7.5  

Static Drain-Source On-Resistance

2  

R

DS(ON)  

11  

18  

V

GS

=4.5V , I

D

=15A  

mΩ  

—  

V

GS(th)  

Gate Threshold Voltage  

1.2  

2.5  

V

—  

△

V

GS(th)  

V

GS(th)

Temperature Coefficient  

-3.97  

V

GS

=V

DS

, I

D

=250uA  

Mv/

℃  

—  

—  

—  

1

V

DS

=24V , V

GS

=0V , T

J

=25

℃  

—  

—  

I

DSS  

Drain-Source Leakage Current  

uA  

5

V

DS

=24V , V

GS

=0V , T

J

=55

℃  

V

GS

=

±

20V , V

DS

=0V  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

I

GSS  

gfs  

Gate-Source Leakage Current  

Forward Transconductance  

±

100  

—  

nA  

S

—  

V

DS

=5V , I

D

=30A  

34  

1.8  

9.8  

4.2  

3.6  

4

R

g  

V

DS

=0V , V

GS

=0V , f=1MHz  

Ω

Gate Resistance  

—  

Total Gate Charge (4.5V)  

Q

g  

—  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Q

gs  

Q

gd  

T

d(on)  

V

DS

=15V , V

GS

=4.5V , I

D

=15A  

—  

nC  

—  

—  

V

DD

=15V , V

GS

=10V ,  

R

G

=3.3  

8

T

r  

Rise Time  

—  

ns  

T

d(off)  

Turn-Off Delay Time  

31  

4

—  

I

D

=15A  

T

f  

C

iss  

C

oss  

C

rss  

I

S  

Fall Time  

—  

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

940  

131  

109  

—  

pF  

V

DS

=15V , V

GS

=0V , f=1MHz  

—  

—  

Continuous Source Current

1,5  

Pulsed Source Current

2,5  

Diode Forward Voltage

2  

43  

A

A

V

—  

—  

V

G

=V

D

=0V , Force Current  

I

SM  

112  

1

V

SD  

V

GS

=0V , I

S

=1A , T

J

=25

℃  

—  

Reverse Recovery Time  

8.5  

t

rr  

nS  

nC  

—  

—  

I

F

=30A  

,

dI/dt=100A/µs  

,

Reverse Recovery Charge  

2.2  

Q

rr  

T

J

=

2 5

℃  

Note :  

1 .The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper.  

2.The data tested by pulsed , pulse width

≦

300us , duty cycle

 

≦

2%  

3 .The EAS data shows Max. rating . The test condition is V

DD

=25V,V

GS

=10V,L=0.1mH,I

AS

=22A  

4.The power dissipation is limited by 175

℃

junction temperature  

5.The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total power dissipation.  

Copyright© Msksemi Incorporated  

AON7506-MS  

Typical Characteristics  

Fig.1 Typical Output Characteristics  

Fig.2 On-Resistance vs. G-S Voltage  

Fig.3Forward Characteristics of Reverse  

Fig.4Gate-Charge Characteristics  

Fig.5 Normalized V

GS(th)

vs. T

J  

Fig.6 Normalized RDSON vs. TJ  

Copyright© Msksemi Incorporated  

AON7506-MS  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

Fig.9 Normalized Maximum Transient Thermal Impedance  

Fig.10 Switching Time Waveform  

Fig.11 Unclamped Inductive Switching Waveform  

Copyright© Msksemi Incorporated  

AON7506-MS  

DFN3X3-8

L

P

ackag

e

I

nformation  

Dimensions In Millimeters  

Symbol  

Min.  

0.70  

0.25  

0.10  

3.25  

3.00  

1.48  

Nom.  

0.75  

0.30  

0.15  

3.35  

3.10  

1.58  

0.13  

Max.  

0.80  

0.35  

0.25  

3.45  

3.20  

1.68  

A

b

c

D

D1  

D2  

D3  

–

–

E

E1  

E2  

e

3.20  

3.00  

2.39  

3.30  

3.15  

3.40  

3.20  

2.59  

2.49  

0.65BSC  

0.39  

H

L

0.30  

0.30  

0.50  

0.50  

0.40  

L1  

0.13  

–

–

M

0.15  

*

*

。

。

θ

10  

12  

REEL SPECIFICATION  

P/N  

PKG  

QTY  

AON7506-MS  

DFN3X3-8L  

5000  

Copyright© Msksemi Incorporated  

AON7506-MS  

Attention  

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Any and all MSKSEMI Semiconductor products described or contained herein do not

 

have specifications

 

that can  

handle applications that require extremely high levels of reliability, such as life-support

 

systems, aircraft’s control systems, or  

other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with  

your MSKSEMI Semiconductor representative

 

nearest you

 

before using any MSKSEMI Semiconductor products described  

or contained herein in such

 

applications.  

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at values that  

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in  

products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.  

■

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performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the  

performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.

T

o  

verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test  

devices mounted in the customer’sproducts orequipment.  

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not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.  

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herein are controlled under any of applicable local export control laws and regulations, such products must not be exported  

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production. MSKSEMI Semiconductor believes information herein is accurate and

 

reliable, but no guarantees are made or  

implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.  

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Any and all information described or contained herein are subject to change without notice due to  

product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI  

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