MSKSEMI-AONR36366-MS
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AONR36366-MS
Product specification
AONR36366-MS
Description
The AONR36366-MS uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and operation with gate voltages as
low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Application
Features
Battery protection
V
DS
= 30V
I =100A
D
Load switch
R
DS(ON)
< 5 . 5 mΩ @ V
GS
=10V
Uninterruptible power supply
Reference News
PACKAGE OUTLINE
P-Channel MOSFET
Marking
100N03
XXXX
PIN1
DFN3X3-8L
Absolute Maximum Ratings (TC=25
℃
unless otherwise specified)
Symbol
V
DS
Parameter
Drain-Source Voltage
Rating
30
Units
V
V
GS
V
±
20
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
100
70
A
A
A
A
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
30
25
I
D
@T
A
=70
℃
Pulsed Drain Current
2
Single Pulse
Avalanche Energy
3
Avalanche Current
192
144.7
53.8
62.5
I
DM
EAS
A
mJ
A
I
AS
Total Power Dissipation
4
W
P
D
@T
C
=25
℃
Total Power Dissipation
4
Storage Temperature Range
4.5
W
℃
P
D
@T
A
=25
℃
T
STG
T
J
-55 to 150
Operating Junction Temperature Range
℃
-55 to 150
62
Thermal Resistance Junction-ambient
1
Thermal Resistance
Junction-Case
1
℃
/W
℃
/W
R
θJA
R
θJC
2.4
Copyright© Msksemi Incorporated
AONR36366-MS
Electrical Characteristics (T
J
=25 ,
unless otherwise noted)
Symbol
Parameter
Conditions Min.
Typ. Max
Unit
.
Drain-Source Breakdown
Voltage
BV
DSS
V
GS
=0V , I
D
=250uA
30
—
—
V
—
—
—
BVDSS Temperature
Coefficient
0.0213
△
BV
DSS
/
△
T
J
,
V/
℃
Reference to 25
℃
I
D
=1mA
V
GS
=10V , I
D
=30A
4
5.5
6
R
DS(ON)
Static Drain-Source On-
Resistance
2
V
GS
=4.5V , I
D
=15A
5.2
mΩ
V
V
GS(th)
Gate Threshold Voltage
1.0
2.5
—
-5.8
—
△
V
GS(th)
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
V
GS
=V
DS
, I
D
=250uA
V
DS
=24V , V
GS
=0V ,
mV/
℃
—
—
—
1
T
J
=25
℃
I
DSS
uA
V
DS
=24V , V
GS
=0V ,
5
—
—
T
J
=55
℃
I
GSS
gfs
R
g
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
nA
S
V
GS
=
±
20V , V
DS
=0V
—
—
—
—
±
100
—
V
DS
=5V , I
D
=30A
26.5
Ω
V
DS
=0V , V
GS
=0V ,
f=1MHz
1.4
—
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay
Time
Rise Time
31.6
8.6
Q
g
Q
gs
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
V
DS
=15V ,
V
GS
=4.5V ,
I
D
=15A
nC
Q
gd
11.7
9
T
d(on)
V
DD
=15V , V
GS
=10V ,
R
G
=3.
3
Ω
19
T
r
ns
T
d(off)
Turn-Off Delay Time
Fall Time
58
I
D
=15A
15.2
3075
400
315
T
f
C
iss
C
oss
C
rss
I
S
Input Capacitance
V
DS
=15V , V
GS
=0V ,
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
pF
A
A
V
—
—
—
V
G
=V
D
=0V , Force
Current
I
SM
192
1
V
GS
=0V , I
S
=1A ,
V
SD
T
J
=25
℃
Diode Characteristics
Note ;
2
1.The data tested by surface mounted on a 1 inch
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
=25V,V =10V,L=0.1mH,I =34A
DD
GS
AS
4.The power dissipation is limited by 150
℃
junction temperature
5 .The
data is theoretically the same as I
and I
DM
, in real applications , should be limited by total power dissipation.
D
Copyright© Msksemi Incorporated
AONR36366-MS
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Copyright© Msksemi Incorporated
AONR36366-MS
Fig.7 Capacitance
Fig.8 Safe Operating Area
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped
Inductive Switching Waveform
Copyright© Msksemi Incorporated
AONR36366-MS
DFN3X3-8
L
P
ackag
e
I
nformation
Dimensions In Millimeters
Symbol
Min.
0.70
0.25
0.10
3.25
3.00
1.48
Nom.
0.75
0.30
0.15
3.35
3.10
1.58
0.13
Max.
0.80
0.35
0.25
3.45
3.20
1.68
A
b
c
D
D1
D2
D3
–
–
E
E1
E2
e
3.20
3.00
2.39
3.30
3.15
3.40
3.20
2.59
2.49
0.65BSC
0.39
H
L
0.30
0.30
0.50
0.50
0.40
L1
0.13
–
–
M
0.15
*
*
。
。
θ
10
12
P/N
PKG
QTY
AONR36366-MS
DFN3X3-8L
5000
Copyright© Msksemi Incorporated
AONR36366-MS
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
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at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
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performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
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or events cannot occur. Such measures include but are
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