MSKSEMI-BC846AW
| Part # | MSKSEMI-BC846AW |
Download  | MSKSEMI-BC846AW |
BC846W/BC847W/BC848W
Semiconductor
Compiance
TRANSISTOR (NPN)
BC846W/BC847W/BC848W
1. BASE
2. EMITTER
3. COLLECTOR
SOT-323
FEATURES
z
Ideally suited for automatic insertion
z
For Switching and AF Amplifier Applications
P/N MARK
BC846AW=1A; BC846BW=1B;
BC847AW=1E; BC847BW=1F; BC847CW=1G;
BC848AW=1J; BC848BW=1K: BC848CW=1L
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Value
80
50
30
65
45
30
6
Unit
Collector-Base Voltage
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
V
V
CEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
EBO
6
5
I
C
Collector Current –Continuous
0.1
150
A
P
C
Collector Power Dissipation
mW
Thermal Resistance From Junction
T
o Ambient
R
ΘJA
T
J
,
T
stg
8
3
3
℃
/W
℃
-55-150
Operation Junction
and Storage Temperature Range
BC846W/BC847W/BC848W
Semiconductor
Compiance
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
M
in
80
50
30
65
45
30
6
T
yp Max Unit
Collector-base breakdown voltage
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
V
CBO
I
C
= 10µA, I
E
=0
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cutoff Current
V
CEO
I
C
= 10mA, I
B
=0
V
V
V
EBO
I
CBO
h
FE
I
E
= 1 µA, I
C
=0
V
CB
=30V
6
5
15
nA
DC current gain
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,BC848CW
90
V
CE
= 5V,
I
C
= 10µA
150
270
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,BC848CW
110
200
420
220
450
800
0.25
0.6
V
CE
= 5V,
I
C
= 2mA
I
C
=10mA, I
B
=0. 5mA
I
C
=100mA, I
B
= 5mA
I
C
=10mA, I
B
=0. 5mA
I
C
=100mA, I
B
= 5mA
V
CE
= 5V,
I
C
= 2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
V
0.7
0.9
V
580
100
660
700
770
m
V
V
CE
= 5V,
I
C
= 10mA
V
CE
= 5
V
,
I
C
= 10mA
f=100MHz
Transition frequency
f
T
MHz
pF
Collector output capacitance
C
ob
V
CB
=10
V
,
f=1MHz
4.5
10
10
4
Noise figure
BC846AW,847AW,848AW
V
CE
=5
V
,
I
c
=0.2mA,
BC846BW,847BW,848BW
BC847CW,BC848CW
NF
f=1KHz,R
S
=2K
Ω
dB
BW=200Hz
BC846W/BC847W/BC848W
Semiconductor
Compiance
Typical Characteristics
Static Characteristic
h
FE
——
I
C
10
8
3000
COMMON
EMITTER
T
a
=25
℃
COMMON EMITTER
V
CE
= 5V
1000
T
a
=100
℃
20uA
18uA
16uA
6
T
a
=25
℃
14uA
12uA
100
4
10uA
8uA
6uA
2
4uA
I
B
=2uA
0
10
0
1
2
3
4
5
6
7
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
I
C
V
BEsat
——
I
C
1000
800
600
400
200
500
β
=20
β
=20
T
a
=25
℃
T
a
=100
℃
100
T
a
=25
℃
T
a
=100
℃
10
0.1
1
10
100
0.1
1
10
100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
—— V
BE
f
T
—— I
C
100
500
COMMON EMITTER
CE
=5V
V
10
100
1
COMMON EMITTER
V
CE
=5V
T
a
=25
℃
0.1
200
10
0.25
400
600
800
2
4
6
8
10
12
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(mV)
P
C
—— T
a
C
ob
/C
ib
——
V
CB
/V
EB
200
150
100
50
100
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
10
C
ob
1
0
0.1
0
25
50
75
100
T
125
150
30
0.1
1
10
AMBIENT TEMPERATURE
(
℃
)
REVERSE VOLTAGE
V
(V)
BC846W/BC847W/BC848W
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A
A1
A2
b
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
c
D
E
E1
e
0.650 TYP
0.525 REF
0.026 T
Y
P
0.021 REF
e1
L
1.200
1.400
0.047
0.055
L1
ꢀ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
REEL SPECIFICATION
P/N
PKG
QTY
BC846W/BC847W/BC848W
SOT-323
3000
BC846W/BC847W/BC848W
Semiconductor
Compiance
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
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■
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or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
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or contained herein are controlled under any of applicable local export control laws and regulations, such
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■
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guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
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product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
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