MSKSEMI-BC846PN
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BC846PN
Semiconductor
Compiance
Plastic-Encapsulate Transistors
DUAL TRANSISTOR (NPN+PNP)
FEATURES
z
Epitaxial Die Construction
(BC846W+BC856W)
z
Two isolated
NPN/PNP
SOT-363
Transistors in one package
MAKING: BB
MAXIMUM RATINGS TR1 (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Para
m
eter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
80
V
65
V
6
V
Collector Current –Continuous
Collector Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
0.1
A
P
C
200
150
-55-150
mW
T
J
℃
T
stg
℃
CHARACTERISTICS of TR1 (NPN Transistor) (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
M
in
T
yp
M
ax
U
nit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=10
μ
A,I
E
=0
V
(BR)CEO
I
C
=10mA,I
B
=0
V
(BR)EBO
I
E
=1
μ
A,I
C
=0
80
65
6
V
V
V
I
CBO
I
EBO
V
CB
=30
V
,
I
E
=0
15
15
nA
nA
Emitter cut-off current
V
EB
=5
V
,
I
C
=0
DC current gain
h
FE
V
CE
=5
V
,
I
C
=2mA
200
450
0.25
0.6
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
V
BE(on)
V
BE(on)
C
ob
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA
V
CE
=5
V
,
I
C
=2mA
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.7
0.9
V
V
0.58
100
0.7
0.72
6.0
V
V
CE
=5
V
,
I
C
=10mA
V
CB
=10
V
,
I
E
=0,f=1MHz
V
CE
=5
V
,
I
C
=10mA,f=100MHz
V
Collector output capacitance
Transition frequency
pF
MHz
f
T
V
CE
=5
V
,
I
c
=0.2mA,
Noise figure
NF
10
dB
f=1kHz,Rg=2K
Ω
,
∆
f=200Hz
BC846PN
Semiconductor
Compiance
MAXIMUM RATINGS TR2 (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Para
m
eter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-80
V
-65
V
-5
V
Collector Current –Continuous
Collector Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
-0.1
200
A
P
C*
mW
T
J
150
℃
℃
T
stg
-55-150
CHARACTERISTICS of TR2 (PNP Transistor) (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
conditions
MIN
-80
-65
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=-10
μ
A,I
E
=0
I
C
=-10mA,I
B
=0
V
I
E
=-1
μ
A,I
C
=0
V
V
CB
=-30V,I
E
=0
-15
-15
nA
nA
Emitter cut-off current
I
EBO
V
EB
=-5V,I
C
=0
DC current gain
h
FE1
V
CE
=-5V,I
C
=-2mA
I
C
=-10mA,I
B
=-0.5mA
I
C
=-100mA,I
B
=-5mA
I
C
=-10mA,I
B
=-0.5mA
I
C
=-100mA,I
B
=-5mA
V
CE
=-5V,I
C
=-2mA
V
CE
=-5V,I
C
=-10mA
V
CB
=-10V,I
E
=0,f=1MHz
V
CE
=-5V,I
C
=-10mA,f=100MHz
220
475
-0.3
-0.65
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
V
BE(on)
V
BE(on)
C
ob
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
-0.7
V
-0.95
-0.75
-0.82
4.5
V
-0.6
100
V
V
Collector output capacitance
Transition frequency
pF
MHz
f
T
V
CE
=-
5
V
,
I
c
=-
0.2
mA,
Noise figure
NF
10
dB
f=
1k
Hz,Rg=
2
K
Ω
,
∆
f=200Hz
BC846PN
Semiconductor
Compiance
SO
T
-3
6
3 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.350
0.150
2.200
1.350
2.4
00
Min
Max
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.150
0.
100
2.000
1.150
2.150
0.035
0.000
0.035
0.006
0.00
4
0.079
0.045
0.085
0.043
0.004
0.039
0.014
0.006
0.087
0.053
0.09
4
0.650 T
Y
P
0.525 REF
0.026 T
Y
P
0.021 REF
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
SO
T
-3
6
3 Suggested Pad Layout
REEL SPECIFICATION
P/N
PKG
QTY
3000
BC846PN
SOT-363
BC846PN
Semiconductor
Compiance
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious
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before using any MSKSEMI Semiconductor products described or contained herein in such applications.
■
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■
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or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
circuitsfor safedesign, redundant design, and structural design.
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or contained herein are controlled under any of applicable local export control laws and regulations, such
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accordance with the above law.
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without the prior written permission of MSKSEMI Semiconductor.
■
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guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
■
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product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
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