MSKSEMI-BCP53-16-MS
| Part # | MSKSEMI-BCP53-16-MS |
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BCP51-MS BCP52-MS BCP53-MS
Semiconductor
Compiance
TRANSISTOR (PNP)
BCP51-MS.52-MS,53-MS
SOT-223
FEATURES
1
z
z
z
z
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54…BCP56 (NPN)
1. BASE
2
2. COLLECTOR
3. EMITTER
3
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Unit
V
BCP53-MS
BCP51-MS BCP52-MS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
-45
-45
-60
-60
-5
-100
-80
V
V
-1
A
P
C
Collector Power Dissipation
1.5
94
W
℃
/W
℃
R
θ
JA
T
stg
Thermal Resistance Junction to Ambient
Storage
T
e
mperature Range
-65
~
+150
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
T
e
st conditions
Min
Max
Unit
Collector-base breakdown voltage
BCP51
BCP52
BCP53
BCP51
BCP52
BCP53
-45
-60
-100
-45
-60
-80
V
(BR)CBO
I
C
=- 0.1mA,I
E
=0
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -10mA,I
B
=0
V
Base-emitter breakdown voltage
Collector cut-off current
V
(BR)EBO
I
CBO
I
E
= -10
μ
A,I
C
=0
-5
V
V
CB
= -30
V
,
I
E
=0
-100
250
nA
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE
V
CE
=-2
V
,
I
C
=-5mA
25
63
25
DC current gain
V
CE
= -2
V
,
I
C
=-150m A
V
CE
= -2
V
,
I
C
=-500m A
I
C
=-500mA,I
B
=-50mA
V
CE
=-2
V
,
I
C
=-500m A
V
CE
=-10
V
,
I
C
=-50mA,f=100MHz
Collector-emitter saturation voltage
Base-emitter voltage
-0.5
-1
V
V
Transition frequency
f
T
100
MHz
CLASSIFICATION OF
h
FE(2)
TypE
BCP51-10,BCP52-10,BCP53-10
63-160
BCP51-16,BCP52-16,BCP53-16
100-250
Range
BCP51-MS BCP52-MS BCP53-MS
Semiconductor
hTypical Characteristics
ha
Compiance
Typical Characteristics
Static Characteristic
h
FE
——
I
C
-250
-200
-150
-100
-50
1000
COMMON
EMITTER
T
a
=25
℃
COMMON EMITTER
V
CE
= -2V
T
a
=100
℃
-1mA
-0.9mA
-0.8mA
-0.7mA
-0.6mA
T
a
=25
℃
100
-0.5mA
-0.4mA
-0.3mA
-0.2mA
I
B
=-0.1mA
-0
10
-0
-1
-2
-3
-4
-5
-1
-10
-100
-1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
I
C
V
BEsat
——
I
C
-1000
-1000
-800
-600
-400
-200
-0
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
-100
T
a
=100
℃
T
a
=25
℃
-10
-0.1
-1
-10
-100
-1000
-0.1
-1
-10
-100
-1000
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
—— V
BE
f
T
—— I
C
-1000
300
COMMON EMITTER
V
CE
=-2V
COMMON EMITTER
V
CE
=-10V
T
a
=25
℃
-100
-10
-1
100
-0.1
10
-3
-0
-200
-400
-600
-800
-1000
-1200
-10
-20
-30
-40
-50
-60
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(mV)
P
C
—— T
a
C
ob
/C
ib
——
V
CB
/V
EB
1800
1500
1200
900
600
300
0
1000
100
10
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
C
ob
1
-0.1
0
25
50
75
100
125
150
-30
-1
-10
AMBIENT TEMPERATURE
T
a
(
℃
)
REVERSE VOLTAGE
V
(V)
BCP51-MS BCP52-MS BCP53-MS
Semiconductor Compiance
PACKAGE MECHANICAL DATA
Di
m
e
nsions In Millimeters
Di
m
e
nsions In Inches
S
y
mbol
Min.
——
Max.
1.800
0.100
1.700
0.840
3.100
0.350
6.700
7.300
3.700
Min.
——
Max.
0.071
0.004
0.067
0.033
0.122
0.014
0.264
0.287
0.146
A
A1
A2
b
b1
c
D
E
E1
e
0.020
1.500
0.660
2.900
0.230
6.300
6.700
3.300
0.001
0.059
0.026
0.114
0.009
0.248
0.264
0.130
2.300(BSC)
0.091(BSC)
L
θ
0.750
0°
——
10°
0.030
0°
——
10°
REEL SPECIFICATION
QTY
P/N
PKG
BCP51-MS BCP52-MS BCP53-MS
1000
SOT-223
BCP51-MS BCP52-MS BCP53-MS
Semiconductor
Compiance
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orcontained herein.
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