MSKSEMI-BCP56-16-MS
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BCP54-MS BCP55-MS BCP56-MS
Semiconductor
Compiance
BCP54-MS,55-MS,56-MS
TRANSISTOR (NPN)
SOT-223
FEATURES
z
z
z
z
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
1
1. BASE
2
2. COLLECTOR
3. EMITTER
3
Complementary types: BCP51 … BCP53 (PNP)
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Unit
V
BCP54-MS
BCP55-MS BCP56-MS
45
45
60
60
5
100
80
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current -Continuous
1
A
P
C
Collector Power Dissipation
1.5
83.3
W
R
θ
JA
T
stg
Thermal Resistance Junction to Ambient
Storage
T
e
mperature Range
℃
/W
-65
~
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
T
e
st conditions
Min
Max
Unit
Collector-base breakdown voltage
BCP54-MS
BCP55-MS
BCP56-MS
45
60
V
(BR)CBO
I
C
= 0.1mA,I
E
=0
V
100
45
Collector-emitter breakdown voltage
BCP54-MS
BCP55-MS
BCP56-MS
V
(BR)CEO
I
C
= 10mA,I
B
=0
60
V
80
Base-emitter breakdown voltage
Collector cut-off current
V
(BR)EBO
I
CBO
I
E
= 10
μ
A,I
C
=0
5
V
V
CB
= 30
V
,
I
E
=0
100
250
nA
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE
V
CE
= 2V, I
C
=5mA
25
63
25
DC current gain
V
CE
= 2V, I
C
=150m A
V
CE
= 2V, I
C
=500m A
I
C
=500mA,I
B
=50mA
V
CE
=2
V
,
I
C
=500m A
V
CE
=10
V
,
I
C
=50mA,f=100MHz
Collector-emitter saturation voltage
Base-emitter voltage
0.5
1
V
V
Transition frequency
f
T
100
MHz
CLASSIFICATION OF
h
FE(2)
BCP54-10, BCP55-10, BCP56-10
63-160
BCP54-16, BCP55-16, BCP56-16
100-250
Rank
Range
BCP54-MS BCP55-MS BCP56-MS
Semiconductor
Compiance
Typical Characteristics
h
FE
—— I
C
Static Characteristic
250
200
150
100
50
1000
COMMON EMITTER
V
CE
=2V
COMMON
EMITTER
T
a
=25
℃
1.0mA
0.9mA
0.8mA
0.7mA
T
a
=100
℃
T
a
=25
℃
300
100
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
I
B
=0.1mA
30
10
0
0
1
2
3
4
5
1
10
100
1000
1000
20
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
—— I
C
V
BEsat
—— I
C
1000
1.0
0.8
0.6
0.4
β
=10
β
=10
300
100
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
30
10
1
10
100
1000
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
—— V
CB
/ V
EB
1000
100
10
300
100
COMMON EMITTER
V
CE
=2V
f=1MHz
I
E
=0/I
C
=0
C
ib
T
a
=25
℃
T
a
=100
℃
C
ob
10
T
a
=25
℃
1
1
0.1
0.2
0.4
0.6
0.8
1.0
1
10
0.3
3
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE BIAS VOLTAGE
V
(V)
P
C
——
T
a
f
T
——
I
C
1800
300
1500
1200
900
600
300
0
100
COMMON EMITTER
V
CE
=10V
T
a
=25
℃
10
10
100
0
25
50
75
100
125
150
30
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
BCP54-MS BCP55-MS BCP56-MS
Semiconductor Compiance
PACKAGE MECHANICAL DATA
Di
m
e
nsions In Millimeters
Di
m
e
nsions In Inches
S
y
mbol
Min.
——
Max.
1.800
0.100
1.700
0.840
3.100
0.350
6.700
7.300
3.700
Min.
——
Max.
0.071
0.004
0.067
0.033
0.122
0.014
0.264
0.287
0.146
A
A1
A2
b
b1
c
D
E
E1
e
0.020
1.500
0.660
2.900
0.230
6.300
6.700
3.300
0.001
0.059
0.026
0.114
0.009
0.248
0.264
0.130
2.300(BSC)
0.091(BSC)
L
θ
0.750
0°
——
10°
0.030
0°
——
10°
REEL SPECIFICATION
QTY
P/N
PKG
1000
BCP54-MS BCP55-MS BCP56-MS
SOT-223
BCP54-MS BCP55-MS BCP56-MS
Semiconductor
Compiance
Attention
■
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orcontained herein.
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performance, characteristics, and functions of the described products in the independent state, and are not
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