MSKSEMI-BSS138NH6327-MS
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BSS138NH6327-MS
Semiconductor
Compiance
D
Features
55V,0.3A, RDS(ON) =1.2Ω@VGS=10V
D
Improved dv
/
d
t capability
G
Fast switching
Green Device Available
G
G
–
S
E
SD Protection Diode Embedded
ESD protected up to 2KV
S
S
SOT-23
Applications
BVDSS
55V
RDSON
1.2R
ID
Motor Drive
0.3A
Power Tools
LED Lighting
Absolute Maximum Ratings T
Tc=25
℃
unless otherwise noted
Symbol
Rating
Units
V
Parameter
Drain-Source Voltage
r
ce Voltage
55
V
DS
V
GS
Gate-Sou
V
±
20
0.3
0.16
0.8
A
Drain Current – Continuous (T
A
=25
℃
)
Drain Current – Continuous (T
A
=70
℃
)
I
D
A
Drain Current – Pulsed
1
A
I
DM
P
D
0.35
0.003
W
Power Dissipation (T
A
=25
℃
)
Power Dissipation – Derate above 25
℃
Storage Temperature Range
W/
℃
℃
T
STG
T
J
-55 to 150
-55 to 150
Operating Junction Temperature Range
℃
Thermal Characteristics
Symbol
Typ.
—
Unit
Parameter
Thermal Resistance Junction to ambient
Max.
357
℃
/W
R
θJA
BSS138NH6327-MS
Semiconductor
Compiance
(T
J
=2
5
℃ ,
u
nless otherwise noted)
Electrical Characteristics
Off Characteristics
Symbol
Typ.
Unit
V
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
Max.
Drain-Source Breakdown Voltage
55
BV
DSS
—
—
—
—
—
1
uA
uA
V
DS
=55V , V
GS
=0V , T
J
=25
℃
V
DS
=40V , V
GS
=0V , T
J
=125
℃
V
GS
=
±
20V , V
DS
=0V
—
—
—
Drain-Source Leakage Current
Gate-Source Leakage Current
I
DSS
I
GSS
100
±
10
uA
On Characteristics
1.2
1.5
1.1
0.5
1.5
2.5
1.5
V
GS
=10V , I
D
=0.2A
V
GS
=4.5V , I
D
=0.1A
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=0.2A
—
R
DS(ON)
Static Drain-Source On-Resistance
—
Gate Threshold Voltage
0.8
V
S
V
GS(th)
gfs
Forward Transconductance
—
—
Dynamic and switching Characteristics
Total Gate Charge
2 , 3
3.7
0.9
0.4
3
Q
g
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Gate-Source Charge
2 , 3
nC
V
DS
=30V , V
GS
=10V , I
D
=0.2A
Q
gs
Gate-Drain Charge
2 , 3
Q
gd
Turn-On Delay Time
2 , 3
T
d(on)
Rise Time
2 , 3
5
V
DD
=30V , V
GS
=10V , R
G
=6
I
D
=0.2A
T
r
ns
pF
Turn-Off Delay Time
2 , 3
14
9
T
d(off)
Fall Time
2 , 3
T
f
Input Capacitance
25.5
17
7.8
C
iss
C
oss
C
rss
V
DS
=30V , V
GS
=0V , F=1MHz
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Typ.
Unit
A
Parameter
Conditions
Min.
—
Max.
0.3
Continuous Source Current
—
—
V
G
=V
D
=0V , Force Current
0.6
1.4
A
I
SM
Pulsed Source Current
Diode Forward Voltage
—
V
V
SD
V
GS
=0V , I
S
=0.2A , T
J
=25
℃
V
R
=50V, I
S
=0.2A
—
—
Reverse Recovery Time
3.4
t
rr
ns
—
—
—
Reverse Recovery Charge
0.7
nC
Q
rr
dI/dt=100A/µs, T
J
=25
℃
—
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
2. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially
independent of operating temperature.
BSS138NH6327-MS
Semiconductor
Compiance
1
0.8
0.6
0.4
0.2
0
0.3
0.15
0.1
VGS=4V
VGS=3.7V
VGS=3.5V
VGS=3.3V
VGS=3V
0.05
0
0
2
4
6
8
10
25
50
75
100
125
150
V
DS
,Drain to Source Voltage (
V
)
T
C
, Case Temperature (
℃
)
Fig.2
Continuous Drain Current vs. T
C
Fig.1
Typical Output Characteristics
2.5
1.4
1.2
1
2
1.5
1
0.8
0.6
0.4
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig
.
4
Normalized V
th
vs. T
J
Fig.3
Normalized RDSON vs.
T
J
2000
1700
1800
1600
1400
1200
1000
1600
1500
1400
1300
1200
ID= 1 0
Tc=25
℃
0 .1 0
0 .1 4
Tc
=
2 5 ℃
0 .1 8
0 .2 2
0 .2 6
0 .3 0
0
8
2
10
4
6
I
D
, Drain Current (A)
Turn-On Resistance vs. I
D
V
GS
, Gate to Source Voltage (V)
Turn
–
On Resistance vs. V
GS
Fig
.
6
Fig
.
5
BSS138NH6327-MS
Semiconductor
Compiance
100
10
1
10
ID=0.2A
VDS=30V
8
6
4
2
0
Ciss
Coss
Crss
0.1
1
10
0
0.8
1.6
2.4
3.2
4
Qg , Gate Charge (
nC
)
V
DS
, Drain to Source Voltage (
V
)
Fig.
8
Gate Charge Characteristics
Fig
.
7
Capacitance Characteristics
1
1
10
us
1
00us
0.1
0.01
0
0
0
0
0
0
.5
.2
.1
.0
.0
.0
0.1
1
s
m
5
2
1
ms
10
1
0
0ms
C
D
NOTES:
DUTY
S
IN
GL
E
P
0.0001
R
=
t
1/t2
FACTO :
D
0.01
0.001
0.00001
0.001
0.01
0.1
1
0.1
1
10
100
V
DS
, Drain to Source Voltage (V)
Fig
.
1
0
Maximum Safe Operation Area
Square Wave Pulse Duration (s)
Fig
.
9
Normalized Transient
BSS138NH6327-MS
Semiconductor Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
REEL SPECIFICATION
QTY
P/N
PKG
3000
BSS138NH6327-MS
SOT-23
BSS138NH6327-MS
Semiconductor
Compiance
Attention
■
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
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reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
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