MSKSEMI-BSS138PS
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BSS138PS
Product specification
BSS138PS
General Features
Application
55
V
,
0.3A, RDS(ON) =1.2Ω@VGS=10V
Improved dv/dt capability
Motor Drive
Power Tools
LED Lighting
Fast switching
Green Device Available
G-S ESD Protection Diode Embedded
ESD protected up to 2KV
Reference News
PACKAGE OUTLINE
Pin Configuration
Marking
K38***
SOT-363
Copyright© Msksemi Incorporated
BSS138PS
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Symbol Parameter
Rating
55
Units
Drain-Source Voltage
V
DS
V
V
A
A
A
Gate-Sou
r
ce Voltage
±
20
V
GS
Drain Current – Continuous (T
A
=25
C
)
Drain Current – Continuous (T
A
=70
C
)
0.3
0.2
I
D
Drain Current – Pulsed
1
I
DM
P
D
0.9
Power Dissipation (T
A
=25
C
)
0.28
W
Power Dissipation – Derate above 25
C
Storage
T
e
mperature Range
W/
C
0.002
-50 to 150
C
C
T
STG
T
J
Operating Junction Temperature Range
-50 to 150
Thermal
Symbol
Characteristics
Parameter
Typ.
Max.
Unit
Thermal Resistance Junction to ambient
—
C
/ W
R
θJA
450
Electrical Characteristics
(
T
=25
℃
, unless otherwise noted)
J
Off
Characteristics
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
Drain-Source Leakage Current
V
GS
=0V , I
D
=250uA
—
—
BV
DSS
55
—
V
Reference to 25
C
, I
D
=1mA
△
BV
DSS
/△
T
J
—
V/
C
0.04
—
I
DSS
I
GSS
—
—
V
DS
=55V , V
GS
=0V , T
J
=25
C
V
GS
=
±
20V , V
DS
=0V
1
uA
uA
Gate-Source Leakage Current
—
±
10
Copyright© Msksemi Incorporated
BSS138PS
On Characteristics
—
—
VGS=10V , ID=0.3A
VGS=4.5V , ID=0.2A
1.2
1.3
1.1
-4
1.5
2.2
Static Drain-Source On-Resistance
RDS(ON)
Gate Threshold Voltage
VGS(th)
0.8
—
1.6
—
V
VGS=VDS , ID =250uA
VDS=10V , ID=0.1A
VGS(th)
T
emperature Coefficient
Forward Transconductance
mV/ C
△
VGS(th)
gfs
—
—
0.24
S
Dynamic and switching Characteristics
Total Gate Charge
2 , 3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Q
g
1.1
0.1
0.23
3
Gate-Source Charge
2 , 3
V
DS
=55V , V
GS
=10V , I
D
=0.2A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
5
V
DD
=55V , V
GS
=10V , R
G
=6
Ω
Turn-Off Delay Time
2 , 3
I
D
=0.2A
T
d(off)
T
f
14
9
Fall Time
2 , 3
Input Capacitance
C
iss
30.6
5.5
4
Output Capacitance
Reverse Transfer Capacitance
V
DS
=10V , V
GS
=0V , F=1MHz
pF
C
oss
C
rss
Drain- Source
Diode Characteristics and Maximum Ratings
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Continuous Source Current
—
—
—
—
—
—
I
S
0.3
0.6
1.4
A
A
V
V
G
=V
D
=0V , Force Current
Pulsed Source Current
Diode Forward Voltage
I
SM
V
SD
V
GS
=0V , I
S
=1A , T
J
=25
C
Note :
1 . Repetitive
Rating :
Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width
3
00
u
s
, duty cycle
2
% .
≦
≦
3 .
Essentially independent of operating temperature.
Copyright© Msksemi Incorporated
BSS138PS
V
DS
, Drain to Source
V
o
ltage (V)
TJ, Juction Temperature(
℃
)
Fig. 1
Output
Characteristics
Fig. 2
Continuous Drain Current vs. TJ
T
J
, Junction Temperature (
℃
)
TJ, Juction Temperature(
℃
)
Fig. 4
Normalized V
th
vs.
T
J
Fig. 3
Normalized RDSON vs.
T
J
-V
DS
, Drain to Source Voltage (V)
Qg , Gate Charge (nC)
Fig. 5
Gate Charge Waveform
Fig. 6
Capacitance Characteristics
Copyright© Msksemi Incorporated
BSS138PS
VDS,Drain
T
o Source Voltage (V)
Fig. 8
Maximum Safe Operation Area
Square Wave Pulse Duration (s)
Fig. 7
Normalized
Transient
Impedance
Fig. 9
Switching Time Waveform
Copyright© Msksemi Incorporated
BSS138PS
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
0.900
0.000
0.900
0.150
0.100
2.000
1.150
2.150
1.100
0.100
1.000
0.350
0.150
2.200
1.350
2.400
0.035
0.000
0.035
0.006
0.004
0.079
0.045
0.085
0.043
0.004
0.039
0.014
0.006
0.087
0.053
0.094
A1
A2
b
c
D
E
E1
e
0.650 TYP
0.525 REF
0.026 TYP
0.021 REF
e1
L
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
Suggested Pad Layout
P/N
QTY
PKG
BSS138PS
SOT-363
3000
Copyright© Msksemi Incorporated
BSS138PS
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■
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have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
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at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
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or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
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production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
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