MSKSEMI-BSS138W-TP-MS
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BSS138W-TP-MS
Product specification
BSS138W-TP-MS
General Features
Application
55
V
,
300mA, RDS(ON) =1.2Ω@VGS = 10V
Improved dv
/
d
t capability
Notebook
Load Switch
Fast switching
Battery Protection
Green Device Available
Hand
–
h
eld Instruments
Reference News
PACKAGE OUTLINE
Pin Configuration
Marking
138W
SOT-323
Copyright© Msksemi Incorporated
BSS138W-TP-MS
Absolute Maximum Ratings Tc=25
℃
unless otherwise noted
Symbol
Parameter
Rating
Units
V
V
DS
Drain-Source Voltage
55
±20
Gate-Sou
r
ce Voltage
V
GS
V
Drain Current – Continuous (T
A
=25
℃
)
300
mA
mA
A
I
D
Drain Current – Continuous (T
A
=70
℃
)
240
Drain Current – Pulsed
1
I
DM
P
D
1.2
Power Dissipation (T
A
=25
℃
)
mW
mW/
℃
℃
313
Power Dissipation – Derate above 25
℃
Storage
T
e
mperature Range
2.5
T
STG
T
J
-55 to 150
-55 to 150
Operating Junction Temperature Range
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
—
R
θJA
Thermal Resistance Junction to ambient
450
℃
/W
Electrical Characteristics
(
T
=25
℃
, unless otherwise noted)
J
Off
Characteristics
Symbol
Parameter
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
Conditions
Min. Typ. Max. Unit
—
—
BV
DSS
V
GS
=0V , I
D
=250uA
55
—
V
V/
℃
uA
A
△
BV
DSS
/△
T
J
—
Reference to 25
℃
, I
D
=1mA
0.05
—
—
—
—
V
DS
=48V , V
GS
=0V , T
J
=25
℃
V
DS
=55V , V
GS
=0V , T
J
=85
℃
1
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
400
±
6
V
GS
=
±
20V , V
DS
=0V
uA
Copyright© Msksemi Incorporated
BSS138W-TP-MS
On Characteristics
—
—
V
GS
=10V , I
D
=0.3A
V
GS
=4.5V , I
D
=0.2A
1.2
1.5
1.1
3
1.5
2.3
Static Drain-Source On-Resistance
R
DS(ON)
V
GS(th)
Gate Threshold Voltage
0.8
—
1.6
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
On Characteristics
—
—
V
GS
=10V , I
D
=0.3A
V
GS
=4.5V , I
D
=0.2A
1.2
1.5
1.1
3
1.5
2.3
1.6
—
R
DS(ON)
Static Drain-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
0.8
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
Dynamic and switching Characteristics
—
—
—
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
23
16
10
V
DS
=30V , V
GS
=0V , F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Continuous Source Current
Pulsed Source Current
Conditions
Min. Typ. Max.
Unit
mA
mA
V
—
—
—
—
—
—
I
S
300
600
1.4
V
G
=V
D
=0V , Force Current
I
SM
V
SD
Diode Forward Voltage
V
GS
=0V , I
S
=0.3A , T
J
=25
℃
Note :
1 . Repetitive
Rating :
Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width
3
00
u
s
, duty cycle
2
% .
≦
≦
3 .
Essentially independent of operating temperature.
Copyright© Msksemi Incorporated
BSS138W-TP-MS
TJ ,JunctionTemperature(
℃
)
TJ, Juction Temperature(
℃
)
Fig. 1
Continuous Drain Current vs.
T
C
Fig. 2
Normalized RDSON vs. T
J
T
J
, Junction Temperature (
℃
)
V
DS
, Drain to Source
V
o
ltage
Fig. 4
Capacitance Characteristics
Fig. 3
Normalized V
th
vs. T
J
Square Wave Pulse Duration (s)
V
DS
, Drain to Source
V
o
ltage(v)
Fig. 6
Maximum Safe Operation Area
Fig. 5
Normalized Transient Response
Copyright© Msksemi Incorporated
BSS138W-TP-MS
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
Min
Max
A
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A1
A2
b
c
D
E
E1
e
0.650 TYP
0.525 REF
0.026 TYP
0.021 REF
e1
1.200
0.260
1.400
0.460
0.047
0.010
0.055
0.018
L
L1
Suggested Pad Layout
P/N
QTY
PKG
BSS138W-TP-MS
SOT-323
3000
Copyright© Msksemi Incorporated
BSS138W-TP-MS
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
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at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
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products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could
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or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
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written permission of MSKSEMI Semiconductor.
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
Semiconductor productthat you intend to use.
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