MSKSEMI-C945-MS

Part #MSKSEMI-C945-MS
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MSKSEMI-C945-MS
C945-MS  
Product specification  

C945-MS  
MARKING  
Reference News  
FEATURES  
Excellent hFE Linearity  
PACKAGE OUTLINE  
Low noise  
1. BASE  
Complementary to A733-MS  
2. EMITTER  
3.COLLECTOR  
CR  
SOT-23  
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  
Collector-Base Voltage  
Value  
Unit  
V
60  
Collector-Emitter Voltage  
V
V
50  
5
Emitter-Base Voltage  
Collector Current  
150  
200  
mA  
mW  
Collector Power Dissipation  
Junction Temperature  
P

C  

T
J
 
150  
℃
℃
Storage Temperature  
T
stg  
-55
~
+150  
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
I

C

=100uA, I

E

=0  
I

C

=1mA ,
 
I

B

=0  
Min Typ  
Max Unit  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
(BR)CBO  
60  
50  
5
V
V
V
V
(BR)CEO  
V
(BR)EBO  
I

CBO  

I

E

=0.1mA, I

C

=0  
V

CB

=60V, I

E

=0  
0.1  
0.1  
0.1  
400  
uA  
uA  
uA  
Collector cut-off current  
I

CER  

Ω
V

CE

=55V,R=10M  
Emitter cut-off current  
V

EB

=5V ,  
V

CE

=6 V ,  
V

CE

=6 V ,  
I

C

=0  
I

EBO  

I

C

=1mA  
I

C

=0.1mA  
130  
40  
h

FE(1)  

h

FE(2)  

V

CE

(sat)  
V

BE

(sat)  
f

T  

DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
I

C

=100mA, I

B

=10mA  
I

C

=100mA, I

B

=10mA  
V

CE

=6V,I

C

=10mA,f =30
 
MHz  
V

CB

=10V,I

E

=0,f=1MH

Z  

V
CE
=
6V,I

C

=0.1
mA  
0.3  
1
V
V
150  
MHz  
pF  
Collector output capacitance  
3.0  
10  
C

ob  

Noise figure  
NF  
4
dB  
R

g

=10
k
Ω
,f=1k
MH

Z  

CLASSIFICATION OF h  
FE(1)  
L
H
Rank  
130-200  
200-400  
Range  
Copyright© Msksemi Incorporated  

C945-MS  
Typical Characteristics  
h

FE

—— I

C  

Static Characteristic  
12  
10  
8
1000  
T

a

=100
℃
 
COMMON  
EMITTER  
T

a

=25
℃  
30uA  
27uA  
24uA  
21uA  
T

a

=25
℃  
300  
100  
18uA  
6
15uA  
12uA  
4
9uA  
30  
10  
6uA  
2
V

CE

=6V  
I

B

=3uA  
0
0
2
4
6
8
10  
12  
150  
10  
0.7  
1
3
10  
30  
100 150  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
V

CEsat

—— I

C  

V

BEsat

—— I

C  

1000  
800  
600  
400  
200  
300  
T

a

=25
℃  
100  
T

a

=100
℃  
T

a

=25
℃  
T

a

=100
℃  
30  
β
=10  
β
=10  
10  
15  
1
10  
30  
100  
0.1  
0.3  
1
10  
100  
150  
3
3
30  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR CURRENT
 
I

C

(mA)  
C

ob

/ C

ib

—— V

CB

/
V

EB  

P

C

—— T

a  

0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
f=1MHz  
I

E

=0 /I

C

=0  
T

a

=25
℃  
10  
C

ib  

5
C

ob  

0
0.1  
0.3  
1
0
25  
50  
75  
100  
125  
150  
3
REVERSE BIAS VOLTAGE  
V
(V)  
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
Copyright© Msksemi Incorporated  

C945-MS  
PACKAGE MECHANICAL DATA  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
1.150  
0.100  
1.050  
0.500  
0.150  
3.000  
1.400  
2.550  
Min  
Max  
0.045  
0.004  
0.041  
0.020  
0.006  
0.118  
0.055  
0.100  
A
A1  
A2  
b
c
D
E
E1  
e
e1  
L
0.900  
0.000  
0.900  
0.300  
0.080  
2.800  
1.200  
2.250  
0.035  
0.000  
0.035  
0.012  
0.003  
0.110  
0.047  
0.089  
0.950 T
Y
P  
0.550 REF  
0.037 T
Y
P  
0.022 REF  
1.800  
2.000  
0.071  
0.079  
L1  
θ
0.300  
0°  
0.500  
8°  
0.012  
0°  
0.020  
8
°  
Suggested Pad Layout  
REEL SPECIFICATION  
P/N  
PKG  
QTY  
C945
-MS  
SOT-23  
3000  
Copyright© Msksemi Incorporated  

C945-MS  
Attention  
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
 
have specifications
 
that can  
handle applications that require extremely high levels of reliability, such as life-support
 
systems, aircraft’s control systems, or  
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with  
your MSKSEMI Semiconductor representative
 
nearest you
 
before using any MSKSEMI Semiconductor products described  
or contained herein in such
 
applications.  
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in  
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.  
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the  
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the  
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o  
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test  
devices mounted in the customer’sproducts orequipment.  
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor  
products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could  
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing  
equipment, adopt safety measures so that these kinds of accidents
 
or events cannot occur. Such measures include but are  
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.  
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In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
 
or contained  
herein are controlled under any of applicable local export control laws and regulations, such products must not be exported  
without obtaining the export license from theauthorities
 
concerned in accordance
 
with the above law.  
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mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior  
written permission of MSKSEMI Semiconductor.  
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume  
production. MSKSEMI Semiconductor believes information herein is accurate and
 
reliable, but no guarantees are made or  
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.  
■
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI  
Semiconductor productthat you intend to use.  
Copyright© Msksemi Incorporated