MSKSEMI-FDC6327C-MS
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FDC6327C-MS
Semiconductor
Compiance
Features
Fast switching
Green Device Available
D2
S1
G2
S2
G1
D1
Applications
Notebook
SOT-23-6
Load Switch
Networking
D2
D1
Hand-held Instruments
G2
BVDSS
20V
RDSON
60m
ID
G1
3.0A
-2.0A
S1
-20V
100m
S2
Absolute Maximum Ratings
Tc=25
℃
unless otherwise noted
Symbol Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
20
±
12
-20
±12
Gate-Sou
r
ce Voltage
V
Drain Current – Continuous (T
C
=25
℃
)
3.0
-2.0
A
I
D
Drain Current – Continuous (T
C
=100
℃
)
2.0
-1.5
A
Drain Current – Pulsed
1
12
-8.0
A
I
DM
P
D
Power Dissipation (T
C
=25
℃
)
1.25
1.25
W
Power Dissipation – Derate above 25
℃
Storage Temperature Range
0.01
0.01
W/
℃
℃
T
STG
T
J
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Operating Junction Temperature Range
℃
Thermal Characteristics
Symbol
Parameter
Thermal Resistance Junction to ambient
Typ.
Max.
Unit
R
θJA
—
100
℃
/W
FDC6327C-MS
Semiconductor
Compiance
N-CH Electrical Characteristics
(T
J
=25
℃
, unless otherwise)
Off Characteristics
Symbol
Parameter
Conditions
Min.
20
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V , I
D
=250uA
Reference to 25
℃
, I
D
=1mA
V
DS
=20V , V
GS
=0V , T
J
=25
℃
V
DS
=16V , V
GS
=0V , T
J
=125
℃
V
GS
=±12V , V
DS
=0V
V/
℃
uA
uA
nA
△
BV
DSS
/
△
T
J
BV
DSS
Temperature Coefficient
0.02
—
—
—
1
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
10
—
—
±100
On Characteristics
m
V
GS
=4.5V , I
D
=3A
V
GS
=2.5V , I
D
=2A
—
—
60
80
0.7
-2
80
R
DS(ON)
Static Drain-Source On-Resistance
110
1.3
—
m
V
GS(th)
Gate Threshold Voltage
0.3
—
V
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=2A
△
V
GS(th)
mV/
℃
V
GS(th)
Temperature Coefficient
Forward Transconductance
gfs
—
4.4
—
S
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
—
—
—
—
—
—
—
—
—
—
5.8
0.6
1.5
2.9
8.4
19.2
5.6
515
50
—
—
—
—
—
—
—
—
—
—
V
DS
=10V , V
GS
=4.5V , I
D
=3A
nC
ns
V
DD
=10V , V
GS
=4.5V , R
G
=25
T
d(off)
T
f
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
I
D
=1A
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=15V , V
GS
=0V , F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
40
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
3.0
Unit
A
I
SM
—
—
6.0
A
V
SD
—
—
1.2
V
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
2. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially
independent of operating temperature.
FDC6327C-MS
Semiconductor
Compiance
T
C
, Case Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.2 Normalized
RDSON vs. T
J
Fig.1 Continuous
Drain Current vs. T
C
T
J
, Junction Temperature (
℃
)
Qg , Gate Charge (
nC
)
Fig.3 Normalized
V
th
vs. T
J
Fig.4 Gate
Charge Waveform
V
DS
, Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
Fig.5 Normalized
Transient Impedance
Fig.6 Maximum
Safe Operation Area
FDC6327C-MS
Semiconductor
Compiance
P-CH Electrical Characteristics
(T
J
=25
℃
, unless otherwise
Off Characteristics
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=
–
250uA
Min.
–
20
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DS
△
T
J
Reference to 25
℃
, I
D
=
–
1mA
V
DS
=
–
20V , V
GS
=0V , T
J
=25
℃
V
DS
=
–
16V , V
GS
=0V , T
J
=125
℃
V
GS
=
±
12V , V
DS
=0V
S
/
–
0.01
—
—
V/
℃
uA
—
–
1
I
DSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
–
10
±
100
uA
I
GSS
—
—
nA
On Characteristics
V
GS
=
–
4.5V , I
D
=
–
3A
V
GS
=
–
2.5V , I
D
=
–
2A
—
—
100
130
–
0.7
3
130
160
–
1.3
—
m
m
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
–
0.3
—
V
GS
=V
DS
, I
D
=
–
250uA
V
DS
=
–
10V , I
D
=
–
1A
△
V
GS(th)
gfs
V
GS(th)
Temperature Coefficient
Forward Transconductance
mV/
℃
S
—
2.2
—
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
—
—
—
—
—
—
—
—
—
—
4.8
0.5
1.9
3.5
12.6
32.6
8.4
350
65
—
—
—
—
—
—
—
—
—
—
nC
ns
V
DS
=
–
10V , V
GS
=
–
4.5V , I
D
=
–
2A
V
DD
=
–
10V , V
GS
=
–
4.5V , R
G
=25
T
d(off)
T
f
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
I
D
=
–
1A
C
iss
C
oss
C
rss
Input Capacitance
pF
Output Capacitance
Reverse Transfer Capacitance
V
DS
=
–
15V , V
GS
=0V , F=1MHz
50
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=
–
1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
–
2.0
–
4.0
Unit
A
I
SM
—
—
A
V
SD
—
—
–
1.2
V
ve Rating : Pulsed width limited by maximum junction temperature.
5. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
6. Essentially
independent of operating temperature.
FDC6327C-MS
Semiconductor
Compiance
T
C
, Case Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.8 Normalized
RDSON vs. T
J
Fig.7 Continuous
Drain Current vs. T
C
T
J
, Junction Temperature (
℃
)
Qg , Gate Charge (
nC
)
Fig.9 Normalized
V
th
vs. T
J
Fig.10 Gate
Charge Waveform
Square Wave Pulse Duration (s)
-V
DS
, Drain to Source Voltage (V)
Fig.11 Normalized
Transient Impedance
Fig.12 Maximum
Safe Operation Area
FDC6327C-MS
Semiconductor Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
S
y
mbol
Min.
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Max.
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
Min.
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
Max.
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
A
A1
A2
b
c
D
E1
E
e
0.950(BSC)
0.037(BSC)
e1
L
θ
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
REEL SPECIFICATION
QTY
P/N
PKG
SOT-23-6
3000
FDC6327C-MS
FDC6327C-MS
Semiconductor
Compiance
Attention
■
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious
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■
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■
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accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
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or contained herein are controlled under any of applicable local export control laws and regulations, such
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reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
MSKSEMI Semiconductor productthat you intend to use.
