MSKSEMI-FMMT593
| Part # | MSKSEMI-FMMT593 |
Download  | MSKSEMI-FMMT593 |
FMMT593
Semiconductor
Compiance
FMMT593
TRANSISTOR (PNP)
FEATURES
Complementary Type FMMT493
MARKING:593
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
SOT
–
23
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-120
-100
-5
Unit
V
Collector-Base Voltage
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
Collector Current
-1
A
Collector Power Dissipation
Thermal Resistance From Junction
T
o Ambient
250
500
mW
℃
/W
P
C
1. BASE
R
ΘJA
2. EMITTER
3. COLLECTOR
Operation Junction
and
Storage Temperature Range
T
J
,
T
stg
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
V
(BR)CBO
I
C
=-100µA, I
E
=0
V
(BR)CEO
I
C
=-10mA, I
B
=0
V
(BR)EBO
I
E
=-100µA, I
C
=0
-120
V
Collector-base breakdown voltage
-100
-5
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
I
CBO
I
CES
V
CB
=-100V, I
E
=0
-0.1
-0.1
-0.1
µA
µA
µA
V
CES
=-100
V
,
I
E
=0
Collector cut-off current
I
EBO
V
EB
=-4V, I
C
=0
Emitter cut-off current
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
*
*
*
*
V
CE
=-5
V
,
I
C
=-1mA
100
100
100
50
V
CE
=-5
V
,
I
C
=-250mA
V
CE
=-5
V
,
I
C
=-0.5A
DC current gain
300
V
CE
=-5
V
,
I
C
=-1A
V
CE(sat)1
V
CE(sat)2
*
*
I
C
=-250mA, I
B
=-25mA
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-5
V
,
I
C
=-1mA
-0.2
-0.3
-1.1
-1
V
V
Collector-emitter saturation voltage
V
BE(sat)
V
BE
*
f
T
*
V
Base-emitter saturation voltage
Base-emitter voltage
V
V
CE
=-10V,I
C
=-50mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
50
MHz
pF
Transition frequency
C
ob
5
Collector output capacitance
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
FMMT593
Semiconductor
Compiance
h
FE
—— I
C
Static Characteristic
-400
-350
-300
-250
-200
-150
-100
-50
1000
100
10
COMMON
EMITTER
T
a
=25
℃
I
B
=-4.0
、
-3.6
、
-3.2mA
-2.8mA
T
a
=100
o
C
-2.4mA
-2.0mA
-1.6mA
T
a
=25
o
C
-1.2mA
-0.8mA
I
B
=-0.4mA
V
CE
= -5V
-0
-0
-1
-2
-3
-4
-5
-6
-7
-8
-1
-10
-100
-1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
-1000
-800
-600
-400
-200
-1000
-800
-600
-400
-200
-0
β
=10
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β
=10
-1
-10
-100
-1000
-1
-10
-100
-1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
—— V
CB
/
V
EB
-1000
-800
-600
-400
-200
-0
1000
100
10
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
o
C
C
ib
T
a
=100
o
C
T
a
=25
℃
C
ob
V
CE
=-5V
1
-200
-400
-600
-800
-1000
-0.1
-1
-10
-20
REVERSE VOLTAGE
V
(V)
BASE-EMITTER VOLTAGE
V
BE
(mV)
f
T
——
I
C
P
c
—— T
a
120
100
80
60
40
20
0
0.3
0.2
0.1
0.0
V
CE
=-10V
T
a
=25
o
C
-0
-20
-40
-60
-80
-100
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
COLLECTOR CURRENT
I
C
(mA)
FMMT593
Semiconductor Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
REEL SPECIFICATION
QTY
P/N
PKG
3000
SOT-23
FMMT593
FMMT593
Semiconductor
Compiance
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you
before using any MSKSEMI Semiconductor products described or contained herein in such applications.
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
circuitsfor safedesign, redundant design, and structural design.
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from theauthorities concerned in
accordance with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written permission of MSKSEMI Semiconductor.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
MSKSEMI Semiconductor productthat you intend to use.
