MSKSEMI-FMMT720
| Part # | MSKSEMI-FMMT720 |
Download  | MSKSEMI-FMMT720 |
FMMT720
Semiconductor
Compiance
FMMT720
TRANSISTOR (PNP)
FEATURE
z
z
z
Switching transistor
Extremely low saturation voltage
Complementary NPN type: FMMT619
1. BASE
APPLICATION
2. EMITTER
3. COLLECTOR
SOT
–
23
z
z
z
z
Gate Driving MOSFETs and IGBTs
DC-DC converters
Charging circuit
Power switches
MARKING: 720
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
B
Parameter
Value
-40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5
V
Base Current
-0.5
A
I
C
*
Collector Current -Continuous
Peak Pulse Current
-1.5
A
I
CM
-4
A
P
C
Total Collector Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
350
mW
R
Θ
JA
T
J
357
℃
/W
℃
150
T
stg
Storage Temperature
-55~+150
℃
FMMT720
Semiconductor
Compiance
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
Test conditions
Min
-40
-40
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=-100
μ
A, I
E
=0
I
C
= -10mA, I
B
=0
V
V
I
E
= -100
μ
A, I
C
=0
V
CB
=-35V, I
E
=0
-0.1
-0.1
-0.1
μ
A
μ
A
μ
A
Collector cut-off current
I
CES
V
CE
=-35V,V
BE
=0
Emitter cut-off current
I
EBO
V
EB
= -4V, I
C
=0
h
FE(1)
*
V
CE
= -2V,
I
C
=-10mA
V
CE
=-2V, I
C
=-100mA
V
CE
=-2V, I
C
=-1A
V
CE
=-2V, I
C
=-1.5A
V
CE
=-2V, I
C
=-3A
I
C
=-0.1A, I
B
=-10mA
I
C
=-1A, I
B
=-50mA
I
C
=-1.5A, I
B
=-100mA
I
C
=-1.5A, I
B
= -75mA
V
CE
=-2V, I
C
=-1.5A
V
CE
=-10V,I
C
=-50mA, f=100MH
Z
300
300
180
60
h
FE(2)
*
DC current gain
h
FE(3)
*
h
FE(4)
*
h
FE(5)
*
12
V
CE(sat) (1)
*
V
CE(sat) (2)
*
V
CE(sat) (3)
*
V
BE(sat)
*
V
BE(on)
*
-40
-220
-330
-1
mV
mV
mV
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn-on Time
-1
V
150
MHz
pF
ns
f
T
C
ob
t
(on)
t
(off)
V
CB
=-10V,f=1MH
Z
25
40
V
CC
=-15V, I
C
=-0.75A, I
B1
=
I
B2
=-15mA
Turn-off Time
435
ns
*Measured under pulse conditions . Pulse width =300
μ
s. Duty cycle
≤
2%.
FMMT720
Semiconductor
Compiance
h
FE
—— I
C
Static Characteristic
1000
800
600
400
200
-350
-300
COMMON
EMITTER
T
a
=25
℃
-0.5mA
V
CE
= -2V
-0.45mA
T
a
=100
o
C
-0.4mA
-0.35mA
-200
-100
-0
-0.3mA
-0.25mA
-0.2mA
T
a
=25
o
C
-0.15mA
-0.1mA
I
B
=-0.05mA
-1500
-0
-1
-2
-3
-4
-5
-6
-1
-10
-100
-1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
-1000
-800
-600
-400
-200
-400
-300
-200
-100
-0
β
=20
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β
=20
-1500
-1000
-1
-10
-100
-1000
-1
-10
-100
-1500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
—— V
CB
/
V
EB
-1500
-1200
-900
-600
-300
-0
1000
100
10
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
o
C
C
ib
T
a
=100
o
C
C
ob
T
a
=25
℃
V
CE
=-2V
1
-200
-400
-600
-800
-1000
-0.1
-1
-10
-20
REVERSE VOLTAGE
V
(V)
BASE-EMITTER VOLTAGE
V
BE
(mV)
f
T
——
I
C
P
c
—— T
a
200
160
120
80
0.5
0.4
0.3
0.2
0.1
0.0
40
V
CE
=-10V
T
a
=25
o
C
0
-0
-20
-40
-60
-80
-100
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
COLLECTOR CURRENT
I
C
(mA)
S
F
M
8
0
M
5
T
0
7
–
M
2
0
S
Semiconductor Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
REEL SPECIFICATION
QTY
P/N
PKG
3000
SOT-23
FMMT720
FMMT720
Semiconductor
Compiance
Attention
■
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
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■
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
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performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
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reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
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