MSKSEMI-IRLML5203
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IRLML5203
Semiconductor
Compiance
D
Features
–
30V,
–
3.0A, RDS(ON) =60mΩ@VGS =
–
10V
Fast switching
G
Green Device Available
S
Suit for
–
4.5V Gate Drive Applications
SOT-23
Applications
Notebook
D
Load Switch
Battery Protection
Hand-held Instruments
G
S
BVDSS
-30V
RDSON
ID
-3.0A
60m
Absolute Maximum Ratings
Tc=25
℃
unless otherwise noted
Symbol Parameter
Rating
–
30
Units
V
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
±
20
V
Drain Current – Continuous (T
A
=25
℃
)
Drain Current – Continuous (T
A
=70
℃
)
Drain Current – Pulsed
1
–
–
3.0
A
I
D
2.0
A
I
DM
P
D
–
12
A
Power Dissipation (T
A
=25
℃
)
1.56
W
Power Dissipation – Derate above 25
℃
Storage Temperature Range
0.012
-55 to 150
-55 to 150
W/
℃
℃
℃
T
STG
T
J
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Thermal Resistance Junction to ambient
Typ.
Max.
80
Unit
R
θJA
—
℃
/W
IRLML5203
Semiconductor
Compiance
Electrical Characteristics
(T
J
=25
℃
, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=
–
250uA
℃
, I
=
–
1mA
Min.
–
30
—
Typ.
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
—
△
BV
DS
△
T
J
Reference to 25
S
/
–
0.02
—
D
V/
℃
uA
V
DS
=
–
27V , V
GS
=0V , T
J
=25
℃
V
DS
=
–
24V , V
GS
=0V , T
J
=125
℃
V
GS
=
±
20V , V
DS
=0V
—
—
–
1
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
–
10
±
100
uA
—
—
nA
On Characteristics
V
GS
=
–
10V , I
D
=
–
3A
V
GS
=
–
4.5V , I
D
=
–
2A
—
—
60
95
95
140
–
2.5
—
m
m
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
–
1.0
—
–
1.6
-2.8
3
V
GS
=V
DS
, I
D
=
–
250uA
V
DS
=
–
10V , I
D
=
–
1A
△
V
GS(th)
gfs
mV/
℃
S
V
GS(th)
Temperature Coefficient
Forward Transconductance
—
—
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
—
—
—
—
—
—
—
—
—
—
—
2.5
0.1
1.8
6.1
8.7
33.2
3.7
226
39
—
—
—
—
—
—
—
—
—
—
—
nC
ns
V
DS
=
–
24V , V
GS
=
–
4.5V , I
D
=
–
2A
V
DD
=
–
15V , V
GS
=
–
10V , R
G
=6
T
d(off)
T
f
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
I
D
=
–
1A
C
iss
C
oss
C
rss
R
g
Input Capacitance
pF
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
DS
=
–
15V , V
GS
=0V , F=1MHz
V
GS
=0V, V
DS
=0V, F=1MHz
29
9.5
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=
–
1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
–
3.0
–
6.0
–
1.2
Unit
A
I
SM
—
—
A
V
SD
—
—
V
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
2. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially
independent of operating temperature.
IRLML5203
Semiconductor
Compiance
T
j
, Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.2 Normalized
RDSON vs. T
J
Fig.1 Continuous
Drain Current vs. T
C
T
J
, Junctio
n
T
emperature (
℃
)
Qg , Gate Charge (
nC
)
Fig.3 Normalized
V
th
vs. T
J
Fig.4 Gate
Charge Waveform
Square Wave Pulse Duration (s)
-V
DS
, Drain to Source Voltag
e
(
V)
Fig.5 Normalized
Transient Impedance
Fig.6 Maximum
Safe Operation Area
IRLML5203
Semiconductor
Compiance
-V
DS
90%
10%
-V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.7 Switching
Time Waveform
Fig.8 Gate
Charge Waveform
IRLML5203
Semiconductor Compiance
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
REEL SPECIFICATION
QTY
P/N
PKG
3000
SOT-23
IRLML5203
IRLML5203
Semiconductor
Compiance
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious
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before using any MSKSEMI Semiconductor products described or contained herein in such applications.
■
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■
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or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
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or contained herein are controlled under any of applicable local export control laws and regulations, such
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without the prior written permission of MSKSEMI Semiconductor.
■
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guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
■
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product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
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